Broad Diversity of Near-Infrared Single-Photon Emitters in Silicon.

We report the detection of individual emitters in silicon belonging to seven different families of optically active point defects. These fluorescent centers are created by carbon implantation of a commercial silicon-on-insulator wafer usually employed for integrated photonics. Single photon emission is demonstrated over the 1.1-1.55 µm range, spanning the O and C telecom bands. We analyze their photoluminescence spectra, dipolar emissions, and optical relaxation dynamics at 10 K. For a specific family, we show a constant emission intensity at saturation from 10 K to temperatures well above the 77 K liquid nitrogen temperature. Given the advanced control over nanofabrication and integration in silicon, these individual artificial atoms are promising systems to investigate for Si-based quantum technologies.

Fabrication of spectrally sharp Si-based dielectric resonators: combining etaloning with Mie resonances.

We use low-resolution optical lithography joined with solid state dewetting of crystalline, ultra-thin silicon on insulator (c-UT-SOI) to form monocrystalline, atomically smooth, silicon-based Mie resonators in well-controlled large periodic arrays. The dewetted islands have a typical size in the 100 nm range, about one order of magnitude smaller than the etching resolution. Exploiting a 2 µm thick SiO2 layer separating the islands and the underlying bulk silicon wafer, we combine the resonant modes of the antennas with the etalon effect. This approach sets the resonance spectral position and improves the structural colorization and the contrast between scattering maxima and minima of individual resonant antennas. Our results demonstrate that templated dewetting enables the formation of defect-free, faceted islands that are much smaller than the nominal etching resolution and that an appropriate engineering of the substrate improves their scattering properties. These results are relevant to applications in spectral filtering, structural color and beam steering with all-dielectric photonic devices.

Si1-xGex nanoantennas with a tailored Raman response and light-to-heat conversion for advanced sensing applications.

Active light-emitting all-dielectric nanoantennas recently have demonstrated great potential as highly efficient nanoscale light sources owing to their strong luminescent and Raman responses. However, their large-scale fabrication faces a number of problems related to productivity limits of existing lithography techniques. Thus, high-throughput fabrication strategies allowing in a facile way to tailor of the nanoantenna emission and thermal properties in the process of their fabrication are highly desirable for various applications. Here, we propose a cost-effective approach to large-scale fabrication of Si1-xGex alloyed Mie nanoresonators possessing an enhanced inherent Raman response which can be simply tailored via tuning the Ge concentration. Moreover, by tailoring the relative Ge composition one can gradually change a complex refractive index of the produced Si1-xGex alloy, which affects the ratio between radiative and nonradiative losses in Si1-xGex nanoantennas, which is crucial for optimization of their optical heating efficiency. Composition-tunable Si1-xGex nanoantennas with an optimized size, light-to-heat conversion and Raman response are implemented for non-invasive sensing of 4-aminothiophenol molecules with a temperature feedback modality and high subwavelength spatial resolution. The results are important for advanced multichannel optical sensing, providing information on analyte's composition, analyte-nanoantenna temperature response and spatial position.

Ordered arrays of Au catalysts by FIB assisted heterogeneous dewetting.

Synthesizing Au0.8Si0.2 nanocatalysts that are homogeneous in size and have controlled position is becoming a challenging and crucial prequisite for the fabrication of ordered semiconductor nanowires. In this study, Au0.8Si0.2 nanocatalysts are synthesized via dewetting of Au layers on Si(111) during thermal annealing in an ultra-high vacuum. In the first part of the paper, the mechanism of homogeneous dewetting is analyzed as a function of the Au-deposited thickness (h Au). We distinguish three different dewetting regimes: (I) for a low thickness ([Formula: see text]), a submonolyer coverage of Au is stabilized and there is no dewetting. (II) For an intermediate thickness ([Formula: see text]), there is both dewetting and Au0.8Si0.2 phase formation. The size and density of the Au0.8Si0.2 clusters are directly related to h Au. When cooling down to room temperature, the clusters decompose and reject the Si at the Au/Si substrate interface. (III) For a large thickness ([Formula: see text]), only dewetting takes place, without forming AuSi clusters. In this regime, the dewetting is kinetically controlled by the self-diffusion of Au (activation energy ∼0.43 eV) without evidence of an Si-alloying effect. As a practical consequence, when relying solely on the homogeneous dewetting of Au/Si(111) to form the Au0.8Si0.2 catalysts (without a supply of Si atoms from vapor), regime II should be used to obtain good size and density control. In the second part of the paper, a process for ordering the catalysts using focused ion beam-(FIB) assisted dewetting (heterogeneous dewetting) is developed. We show that no matter what the FIB milling conditions and the Au nominal thickness are, dewetting is promoted by ion beam irradiation and is accompanied by the formation of Au0.8Si0.2 droplets. The droplets preferentially form on the patterned areas, while in similar annealing conditions, they do not form on the unpatterned areas. This behavior is attributed to the larger Au-Si interdiffusion in the patterned areas, which results from the Si amorphization induced by the FIB. A systematic analysis of the position of the nanodroplets shows their preferential nucleation inside the patterns, while thicker platelets of almost pure Au are observed between the patterns. The evolutions of the size homogeneity and the occupancy rate of the patterns are quantified as a function of the FIB dose and annealing temperature. Nice arrays of perfectly ordered AuSi catalysts are obtained after optimizing the FIB and dewetting conditions.

[Accidents among postmen using motorbikes for mail deliveries in Tuscany in the period 2007-2009]. / Gli infortuni negli addetti ai recapiti postali in servizio con il motomezzo in Toscana negli anni 2007-2009.

BACKGROUND: Health risks for postmen using motorbikes for mail delivery may be influenced by stability, weight and ease of handling of the vehicle, traffic and slippery or irregular road surface. OBJECTIVES: To describe accidents that occurred among postmen in Tuscany and evaluate how many of these would have been prevented using the UNI EN 13595/2004 safety jacket. METHODS: Record linkage of data obtained from the employer--the main mail delivery company in Italy--and from the Italian Workers Compensation Authority on accidents that occurred in postmen in Tuscany who used motorbikes for deliveries during the period 2007-2009. Accident rates (with CI 95%) by age, sex, year and province were calculated; the differences were evaluated using chi2 test. RESULTS: 1,342 accidents requiring at least 3 days' sick absence were recorded in postmen in Tuscany in the period 2007-2009, with an increasing trend in young men. The average accident rate was 17.6 per 100 workers, with 42,419 sick absence days. The female rate was higher compared to men (19.4%, CI 95% 18.03-20.79 in women vs 15.5%, CI 95%: 14.15-16.89 in men). 68% of accidents occurred driving a motorbike. The index of severity was 6.79, which was higher than that calculated by INAIL for the whole Tuscan transport and communication work sector (5.31). 309 accidents (11,021 sick absence days) could have been mitigated or avoided using UNI EN 13595/2004 safety jackets (47% spinal, 30% shoulder, 23% elbow, arm and forearm). CONCLUSIONS: The frequency of accidents in postmen using motorbikes is extremely high. Several serious accidents could have been prevented using the UNI EN 13595/2004 safety jackets, suggesting the need to make their use obligatory by these workers.

Direct observation of Dirac cones and a flatband in a honeycomb lattice for polaritons.

Two-dimensional lattices of coupled micropillars etched in a planar semiconductor microcavity offer a workbench to engineer the band structure of polaritons. We report experimental studies of honeycomb lattices where the polariton low-energy dispersion is analogous to that of electrons in graphene. Using energy-resolved photoluminescence, we directly observe Dirac cones, around which the dynamics of polaritons is described by the Dirac equation for massless particles. At higher energies, we observe p orbital bands, one of them with the nondispersive character of a flatband. The realization of this structure which holds massless, massive, and infinitely massive particles opens the route towards studies of the interplay of dispersion, interactions, and frustration in a novel and controlled environment.

Fast emission dynamics in droplet epitaxy GaAs ring-disk nanostructures integrated on Si.

The emission dynamics in GaAs/AlGaAs coupled ring-disk (CRD) quantum structures fabricated on silicon substrates is presented. The CRD structures are self-assembled via droplet epitaxy, a growth technique which, due to its low thermal budget, is compatible with the monolithic integration of III-V devices on Si based electronic circuits. Continuous wave, time resolved photoluminescence and theoretical calculations in the effective mass approximations are presented for the assessment of the electronic and carrier properties of the CRDs. The CRDs show a fast carrier dynamics which is expected to be suitable for ultrafast optical switching applications integrated on silicon.

Dark-bright mixing of interband transitions in symmetric semiconductor quantum dots.

In photoluminescence spectra of symmetric [111] grown GaAs/AlGaAs quantum dots in longitudinal magnetic fields applied along the growth axis, we observe in addition to the expected bright states also nominally dark transitions for both charged and neutral excitons. We uncover a strongly nonmonotonic, sign-changing field dependence of the bright neutral exciton splitting resulting from the interplay between exchange and Zeeman effects. Our theory shows quantitatively that these surprising experimental results are due to magnetic-field-induced ±3/2 heavy-hole mixing, an inherent property of systems with C(3v) point-group symmetry.

Young's type interference for probing the mode symmetry in photonic structures.

A revisited realization of the Young's double slit experiment is introduced to directly probe the photonic mode symmetry by photoluminescence experiments. We experimentally measure the far field angular emission pattern of quantum dots embedded in photonic molecules. The experimental data well agree with predictions from Young's interference and numerical simulations. Moreover, the vectorial nature of photonic eigenmodes results in a rather complicated parity property for different polarizations, a feature which has no counterpart in quantum mechanics.

Ultra-narrow emission from single GaAs self-assembled quantum dots grown by droplet epitaxy.

We realized ultra-narrow excitonic emission from single GaAs/AlGaAs quantum dots (QDs) grown by a refined droplet epitaxy technique. We found that uncapped quantum dots can be annealed at 400 degrees C without major changes in their morphology, thus enabling an AlGaAs capping layer to be grown at that temperature. Consequently, we demonstrate a fourfold reduction of the linewidth of the emission together with an increased recombination lifetime, compared to the conventional droplet epitaxial QDs. The averaged linewidth of neutral excitons measured by micro-photoluminescence on single quantum dots was around 35 microeV.