Asymmetric TMO-Metal-TMO Structure for Enhanced Efficiency and Long-Term Stability of Si-Based Heterojunction Solar Cells.

In this study, we fabricated Si-based heterojunction solar cells (HSCs) with an asymmetric TMO-metal-TMO (TMT) structure using both MoO3 and V2O5 as the hole-selective contacts. Our HSCs offer enhanced long-term stability and effective passivation for crystal defects on the Si sur-face. We analyzed the oxygen vacancy state and surface morphology of the MoO3- and V2O5-TMO thin films using X-ray photoelectron spectroscopy and atomic force microscopy to investigate their passivation characteristics for Si surface defects. From the measured minority carrier lifetime, V2O5 revealed a highly improved lifetime (590 µs) compared to that of MoO3 (122.3 µs). In addition, we evaluated the long-term stability of each TMO thin film to improve the operation stability of the HSCs. We deposited different types of TMOs as the top- and bottom-TMO layers and assessed the effect of the thickness of each TMO layer. The fabricated asymmetric TMT/Si HSCs showed noticeable improvements in efficiency (7.57%) compared to 6.29% for the conventional symmetric structure which used the same TMO material for both the top and bottom layers. Furthermore, in terms of long-term stability, the asymmetric TMT/Si HSCs demonstrated an efficiency that was 250% higher than that of symmetric TMT/Si HSCs, as determined via power conversion efficiency degradation over 2000 h which is mainly attributed by the lower oxygen vacancy of the top-TMO, V2O5. These results suggest that the asymmetric TMT structure is a promising approach for the fabrication of low-cost and high-efficiency Si-based HSCs with enhanced long-term stability.

Stoichiometry and Morphology Analysis of Thermally Deposited V2O5-x Thin Films for Si/V2O5-x Heterojunction Solar Cell Applications.

In recent decades, dopant-free Si-based solar cells with a transition metal oxide layer have gained noticeable research interest as promising candidates for next-generation solar cells with both low manufacturing cost and high power conversion efficiency. Here, we report the effect of the substrate temperature for the deposition of vanadium oxide (V2O5-x, 0 ≤ X ≤ 5) thin films (TFs) for enhanced Si surface passivation. The effectiveness of SiOx formation at the Si/V2O5-x interface for Si surface passivation was investigated by comparing the results of minority carrier lifetime measurements, X-ray photoelectron spectroscopy, and atomic force microscopy. We successfully demonstrated that the deposition temperature of V2O5-x has a decisive effect on the surface passivation performance. The results confirmed that the aspect ratio of the V2O5-x islands that are initially deposited is a crucial factor to facilitate the transport of oxygen atoms originating from the V2O5-x being deposited to the Si surface. In addition, the stoichiometry of V2O5-x TFs can be notably altered by substrate temperature during deposition. As a result, experimentation with the fabricated Si/V2O5-x heterojunction solar cells confirmed that the power conversion efficiency is the highest at a V2O5-x deposition temperature of 75 °C.

Photovoltaic Device Application of a Hydroquinone-Modified Conductive Polymer and Dual-Functional Molecular Si Surface Passivation Technology.

In the last decades, the conductive polymer PEDOT:PSS has been introduced in Si-based hybrid solar cells, gaining noticeable research interest and being considered a promising candidate for next generation solar cells which can achieve both of low manufacturing cost and high power conversion efficiency. This study succeeded in improving the electrical conductivity of PEDOT:PSS to 937 S/cm through a simple process of adding hydroquinone (HQ) to the pristine PEDOT:PSS solution. The results also showed that the addition of HQ to PEDOT:PSS(HQ-PEDOT:PSS) could not only dramatically improve the conductivity but also well-sustain the work function characteristics of PEDOT:PSS by promoting the formation of more continuous conductive-PEDOT channels without removing the insulating PSS. In this report, we reveal that the application of the HQ-PEDOT:PSS to the Si/PEDOT:PSS HSC could significantly improve the short-circuit current and open-circuit voltage characteristics to increase the power conversion efficiency of the HSCs compared to the conventional approaches. Moreover, we also treated the Si surface with the organic monomer, benzoquinone (BQ) to (1) passivate the excess Si surface defect states and (2) to improve the properties of the Si/PEDOT:PSS interface. We show that BQ treatment is able to dramatically increase the minority carrier lifetime induced by effective chemical and field-effect passivation in addition to enhancing the wettability of the Si surface with the PEDOT:PSS solution. As a result, the power conversion efficiency was increased by 10.6% by introducing HQ and BQ into the fabrication process of the Si/PEDOT:PSS HSC.

Omnidirectional and Broadband Antireflection Effect with Tapered Silicon Nanostructures Fabricated with Low-Cost and Large-Area Capable Nanosphere Lithography.

In this report, we present a process for the fabrication and tapering of a silicon (Si) nanopillar (NP) array on a large Si surface area wafer (2-inch diameter) to provide enhanced light harvesting for Si solar cell application. From our N,N-dimethyl-formamide (DMF) solvent-controlled spin-coating method, silica nanosphere (SNS in 310 nm diameter) coating on the Si surface was demonstrated successfully with improved monolayer coverage (>95%) and uniformity. After combining this method with a reactive ion etching (RIE) technique, a high-density Si NP array was produced, and we revealed that controlled tapering of Si NPs could be achieved after introducing a two-step RIE process using (1) CHF3/Ar gases for SNS selective etching over Si and (2) Cl2 gas for Si vertical etching. From our experimental and computational study, we show that an effectively tapered Si NP (i.e., an Si nanotip (NT)) structure could offer a highly effective omnidirectional and broadband antireflection effect for high-efficiency Si solar cell application.

Photocurrent enhancements of organic solar cells by altering dewetting of plasmonic Ag nanoparticles.

Incorporation of metal nanoparticles into active layers of organic solar cells is one of the promising light trapping approaches. The size of metal nanoparticles is one of key factors to strong light trapping, and the size of thermally evaporated metal nanoparticles can be tuned by either post heat treatment or surface modification of substrates. We deposited Ag nanoparticles on ITO by varying nominal thicknesses, and post annealing was carried out to increase their size in radius. PEDOT: PSS was employed onto the ITO substrates as a buffer layer to alter the dewetting behavior of Ag nanoparticles. The size of Ag nanoparticles on PEDOT: PSS were dramatically increased by more than three times compared to those on the ITO substrates. Organic solar cells were fabricated on the ITO and PEDOT: PSS coated ITO substrates with incorporation of those Ag nanoparticles, and their performances were compared. The photocurrents of the cells with the active layers on PEDOT: PSS with an optimal choice of the Ag nanoparticles were greatly enhanced whereas the Ag nanoparticles on the ITO substrates did not lead to the photocurrent enhancements. The origin of the photocurrent enhancements with introducing the Ag nanoparticles on PEDOT: PSS are discussed.

Fabrication of periodic silicon nanopillars in a two-dimensional hexagonal array with enhanced control on structural dimension and period.

We present a method to fabricate well-controlled periodic silicon nanopillars (Si NPs) in hexagonal arrays using silica nanosphere (SNS) lithography (SNL) combined with metal-assisted chemical etching (MaCE). The period of the Si NPs is easily changed by using our silica nanosphere (SNS) spin-coating process, which provides excellent monolayer uniformity and coverage (>95%) over large surface areas. The size of the deposited SNS is adjusted by reactive ion etching (RIE) to produce a target diameter at a fixed period for control of the surface pattern size after a gold metal mask layer deposition. The Si NPs are etched with the MaCE technique following introduction of a Ni interfacial layer between the Si and Au catalyst layer for adhesion and improved lithographical accuracy. The result is a fast, convenient, and large-area applicable Si surface nanolithography technique for accurate and reproducible Si NP fabrication.

Solvent-controlled spin-coating method for large-scale area deposition of two-dimensional silica nanosphere assembled layers.

In this article, we show that introducing a N,N-dimethyl-formamide (DMF) solvent for silica nanosphere (SNS) monolayer spin-coating can offer a low-cost and simple spin-coating approach for SNS monolayer deposition even on large-area silicon surfaces. From our method, more than 95% monolayer coverage for a 2 in round Si surface was achieved, which is one of the highest reported coverage by a spin-coating method. We prove that DMF offers highly enhanced wettability and slow solvent evaporation rate compared to a conventional solvent, water, in addition to excellent SNS dispersibility in solution preventing SNS cluster deposition on the surface and consequently produces a close-packed SNS monolayer with good uniformity over the surface. In addition, the benefits of DMF are retained as the deposition area increases indicating its high tolerance to spin-coating area. Better than 90% SNS monolayer coverage on a 4 in Si substrate was achieved with the DMF spin-coating method. Moreover, DMF has the advantage that SNS spin-coating can be done under common ambient laboratory conditions with 100% pure DMF unlike previous approaches which require humidity and temperature controls or additional surfactant additions to the solution.