Intrinsic exchange biased anomalous Hall effect in an uncompensated antiferromagnet MnBi2Te4.

Achieving spin-pinning at the interface of hetero-bilayer ferromagnet/antiferromagnet structures in conventional exchange bias systems can be challenging due to difficulties in interface control and the weakening of spin-pinning caused by poor interface quality. In this work, we propose an alternative approach to stabilize the exchange interaction at the interface of an uncompensated antiferromagnet by utilizing a gradient of interlayer exchange coupling. We demonstrate this exchange interaction through a designed field training protocol in the odd-layer topological antiferromagnet MnBi2Te4. Our results reveal a remarkable field-trained exchange bias of up to ~ 400 mT, which exhibits high repeatability and can be easily reset by a large training field. Notably, this field-trained exchange bias effect persists even with zero-field initialization, presenting a stark contrast to the traditional field-cooled exchange bias. The highly tunable exchange bias observed in this single antiferromagnet compound, without the need for an additional magnetic layer, provides valuable insight into the exchange interaction mechanism. These findings pave the way for the systematic design of topological antiferromagnetic spintronics.

Exchange-Driven Chern States in High-Mobility Intrinsic Magnetic Topological Insulators.

The layer-dependent Chern number (C) in MnBi_{2}Te_{4} is characterized by the presence of a Weyl semimetal state in the ferromagnetic coupling. However, the influence of a key factor, namely, the exchange coupling, remains unexplored. This study focuses on characterizing the C=2 state in MnBi_{2}Te_{4}, which is classified as a higher C state resulting from the anomalous n=0 Landau levels (LLs). Our findings demonstrate that the exchange coupling parameter strongly influences the formation of this Chern state, leading to a competition between the C=1 and 2 states. Moreover, the emergence of odd-even LL sequences, resulting from the breaking of LL degeneracy, provides compelling evidence for the strong exchange coupling strength. These findings highlight the significance of the exchange coupling in understanding the behavior of Chern states and LLs in magnetic quantum systems.

Unveiling the Anomalous Hall Response of the Magnetic Structure Changes in the Epitaxial MnBi2Te4 Films.

Recently discovered as an intrinsic antiferromagnetic topological insulator, MnBi2Te4 has attracted tremendous research interest, as it provides an ideal platform to explore the interplay between topological and magnetic orders. MnBi2Te4 displays distinct exotic topological phases that are inextricably linked to the different magnetic structures of the material. In this study, we conducted electrical transport measurements and systematically investigated the anomalous Hall response of epitaxial MnBi2Te4 films when subjected to an external magnetic field sweep, revealing the different magnetic structures stemming from the interplay of applied fields and the material's intrinsic antiferromagnetic (AFM) ordering. Our results demonstrate that the nonsquare anomalous Hall loop is a consequence of the distinct reversal processes within individual septuple layers. These findings shed light on the intricate magnetic structures in MnBi2Te4 and related materials, offering insights into understanding their transport properties and facilitating the implementation of AFM topological electronics.

Manipulating Topological Phases in Magnetic Topological Insulators.

Magnetic topological insulators (MTIs) are a group of materials that feature topological band structures with concurrent magnetism, which can offer new opportunities for technological advancements in various applications, such as spintronics and quantum computing. The combination of topology and magnetism introduces a rich spectrum of topological phases in MTIs, which can be controllably manipulated by tuning material parameters such as doping profiles, interfacial proximity effect, or external conditions such as pressure and electric field. In this paper, we first review the mainstream MTI material platforms where the quantum anomalous Hall effect can be achieved, along with other exotic topological phases in MTIs. We then focus on highlighting recent developments in modulating topological properties in MTI with finite-size limit, pressure, electric field, and magnetic proximity effect. The manipulation of topological phases in MTIs provides an exciting avenue for advancing both fundamental research and practical applications. As this field continues to develop, further investigations into the interplay between topology and magnetism in MTIs will undoubtedly pave the way for innovative breakthroughs in the fundamental understanding of topological physics as well as practical applications.

Quantized resistance revealed at the criticality of the quantum anomalous Hall phase transitions.

In multilayered magnetic topological insulator structures, magnetization reversal processes can drive topological phase transitions between quantum anomalous Hall, axion insulator, and normal insulator states. Here we report an examination of the critical behavior of two such transitions: the quantum anomalous Hall to normal insulator (QAH-NI), and quantum anomalous Hall to axion insulator (QAH-AXI) transitions. By introducing a new analysis protocol wherein temperature dependent variations in the magnetic coercivity are accounted for, the critical behavior of the QAH-NI and QAH-AXI transitions are evaluated over a wide range of temperature and magnetic field. Despite the uniqueness of these different transitions, quantized longitudinal resistance and Hall conductance are observed at criticality in both cases. Furthermore, critical exponents were extracted for QAH-AXI transitions occurring at magnetization reversals of two different magnetic layers. The observation of consistent critical exponents and resistances in each case, independent of the magnetic layer details, demonstrates critical behaviors in quantum anomalous Hall transitions to be of electronic rather than magnetic origin. Our finding offers a new avenue for studies of phase transition and criticality in QAH insulators.

Anomalous Landau quantization in intrinsic magnetic topological insulators.

The intrinsic magnetic topological insulator, Mn(Bi1-xSbx)2Te4, has been identified as a Weyl semimetal with a single pair of Weyl nodes in its spin-aligned strong-field configuration. A direct consequence of the Weyl state is the layer dependent Chern number, [Formula: see text]. Previous reports in MnBi2Te4 thin films have shown higher [Formula: see text] states either by increasing the film thickness or controlling the chemical potential. A clear picture of the higher Chern states is still lacking as data interpretation is further complicated by the emergence of surface-band Landau levels under magnetic fields. Here, we report a tunable layer-dependent [Formula: see text] = 1 state with Sb substitution by performing a detailed analysis of the quantization states in Mn(Bi1-xSbx)2Te4 dual-gated devices-consistent with calculations of the bulk Weyl point separation in the doped thin films. The observed Hall quantization plateaus for our thicker Mn(Bi1-xSbx)2Te4 films under strong magnetic fields can be interpreted by a theory of surface and bulk spin-polarised Landau level spectra in thin film magnetic topological insulators.

Implementing microwave impedance microscopy in a dilution refrigerator.

We report the implementation of a dilution refrigerator-based scanning microwave impedance microscope with a base temperature of ∼100 mK. The vibration noise of our apparatus with tuning-fork feedback control is as low as 1 nm. Using this setup, we have demonstrated the imaging of quantum anomalous Hall states in magnetically (Cr and V) doped (Bi, Sb)2Te3 thin films grown on mica substrates. Both the conductive edge modes and topological phase transitions near the coercive fields of Cr- and V-doped layers are visualized in the field-dependent results. Our study establishes the experimental platform for investigating nanoscale quantum phenomena at ultralow temperatures.

Exchange-Biased Quantum Anomalous Hall Effect.

The quantum anomalous Hall (QAH) effect is characterized by a dissipationless chiral edge state with a quantized Hall resistance at zero magnetic field. Manipulating the QAH state is of great importance in both the understanding of topological quantum physics and the implementation of dissipationless electronics. Here, the QAH effect is realized in the magnetic topological insulator Cr-doped (Bi,Sb)2 Te3 (CBST) grown on an uncompensated antiferromagnetic insulator Al-doped Cr2 O3 . Through polarized neutron reflectometry (PNR), a strong exchange coupling is found between CBST and Al-Cr2 O3 surface spins fixing interfacial magnetic moments perpendicular to the film plane. The interfacial coupling results in an exchange-biased QAH effect. This study further demonstrates that the magnitude and sign of the exchange bias can be effectively controlled using a field training process to set the magnetization of the Al-Cr2 O3 layer. It demonstrates the use of the exchange bias effect to effectively manipulate the QAH state, opening new possibilities in QAH-based spintronics.

Unidirectional Spin Hall Magnetoresistance in Antiferromagnetic Heterostructures.

Unidirectional spin Hall magnetoresistance (USMR) has been widely reported in the heavy metal/ferromagnet bilayer systems. We observe the USMR in Pt/α-Fe_{2}O_{3} bilayers where the α-Fe_{2}O_{3} is an antiferromagnetic (AFM) insulator. Systematic field and temperature dependent measurements confirm the magnonic origin of the USMR. The appearance of AFM-USMR is driven by the imbalance of creation and annihilation of AFM magnons by spin orbit torque due to the thermal random field. However, unlike its ferromagnetic counterpart, theoretical modeling reveals that the USMR in Pt/α-Fe_{2}O_{3} is determined by the antiferromagtic magnon number with a non-monotonic field dependence. Our findings extend the generality of the USMR which pave the ways for the highly sensitive detection of AFM spin state.

Electrical Manipulation of Topological Phases in a Quantum Anomalous Hall Insulator.

Quantum anomalous Hall phases arising from the inverted band topology in magnetically doped topological insulators have emerged as an important subject of research for quantization at zero magnetic fields. Though necessary for practical implementation, sophisticated electrical control of molecular beam epitaxy (MBE)-grown quantum anomalous Hall matter have been stymied by growth and fabrication challenges. Here, a novel procedure is demonstrated, employing a combination of thin-film deposition and 2D material stacking techniques, to create dual-gated devices of the MBE-grown quantum anomalous Hall insulator, Cr-doped (Bi,Sb)2 Te3 . In these devices, orthogonal control over the field-induced charge density and the electric displacement field is demonstrated. A thorough examination of material responses to tuning along each control axis is presented, realizing magnetic property control along the former and a novel capability to manipulate the surface exchange gap along the latter. Through electrically addressing the exchange gap, the capabilities to either strengthen the quantum anomalous Hall state or suppress it entirely and drive a topological phase transition to a trivial state are demonstrated. The experimental result is explained using first principle theoretical calculations, and establishes a practical route for in situ control of quantum anomalous Hall states and topology.

Emergent helical edge states in a hybridized three-dimensional topological insulator.

As the thickness of a three-dimensional (3D) topological insulator (TI) becomes comparable to the penetration depth of surface states, quantum tunneling between surfaces turns their gapless Dirac electronic structure into a gapped spectrum. Whether the surface hybridization gap can host topological edge states is still an open question. Herein, we provide transport evidence of 2D topological states in the quantum tunneling regime of a bulk insulating 3D TI BiSbTeSe2. Different from its trivial insulating phase, this 2D topological state exhibits a finite longitudinal conductance at ~2e2/h when the Fermi level is aligned within the surface gap, indicating an emergent quantum spin Hall (QSH) state. The transition from the QSH to quantum Hall (QH) state in a transverse magnetic field further supports the existence of this distinguished 2D topological phase. In addition, we demonstrate a second route to realize the 2D topological state via surface gap-closing and topological phase transition mechanism mediated by a transverse electric field. The experimental realization of the 2D topological phase in a 3D TI enriches its phase diagram and marks an important step toward functionalized topological quantum devices.

Distinguishing the Two-Component Anomalous Hall Effect from the Topological Hall Effect.

In transport, the topological Hall effect (THE) presents itself as nonmonotonic features (or humps and dips) in the Hall signal and is widely interpreted as a sign of chiral spin textures, like magnetic skyrmions. However, when the anomalous Hall effect (AHE) is also present, the coexistence of two AHEs could give rise to similar artifacts, making it difficult to distinguish between genuine THE with AHE and two-component AHE. Here, we confirm genuine THE with AHE by means of transport and magneto-optical Kerr effect (MOKE) microscopy, in which magnetic skyrmions are directly observed, and find that genuine THE occurs in the transition region of the AHE. In sharp contrast, the artifact "THE" or two-component AHE occurs well beyond the saturation of the "AHE component" (under the false assumption of THE + AHE). Furthermore, we distinguish artifact "THE" from genuine THE by three methods: (1) minor loops, (2) temperature dependence, and (3) gate dependence. Minor loops of genuine THE with AHE are always within the full loop, while minor loops of the artifact "THE" may reveal a single loop that cannot fit into the "AHE component". In addition, the temperature or gate dependence of the artifact "THE" may also be accompanied by a polarity change of the "AHE component", as the nonmonotonic features vanish, while the temperature dependence of genuine THE with AHE reveals no such change. Our work may help future researchers to exercise caution and use these methods for careful examination in order to ascertain the genuine THE.

Probing the mesoscopic size limit of quantum anomalous Hall insulators.

The inelastic scattering length (Ls) is a length scale of fundamental importance in condensed matters due to the relationship between inelastic scattering and quantum dephasing. In quantum anomalous Hall (QAH) materials, the mesoscopic length scale Ls plays an instrumental role in determining transport properties. Here we examine Ls in three regimes of the QAH system with distinct transport behaviors: the QAH, quantum critical, and insulating regimes. Although the resistance changes by five orders of magnitude when tuning between these distinct electronic phases, scaling analyses indicate a universal Ls among all regimes. Finally, mesoscopic scaled devices with sizes on the order of Ls were fabricated, enabling the direct detection of the value of Ls in QAH samples. Our results unveil the fundamental length scale that governs the transport behavior of QAH materials.

Mesoscopic Transport of Quantum Anomalous Hall Effect in the Submicron Size Regime.

The quantum anomalous Hall (QAH) effect has been demonstrated in two-dimensional topological insulator systems incorporated with ferromagnetism. However, a comprehensive understanding of mesoscopic transport in submicron QAH devices has not yet been established. Here we fabricated miniaturized QAH devices with channel widths down to 600 nm, where the QAH features are still preserved. A backscattering channel is formed in narrow QAH devices through percolative hopping between 2D compressible puddles. Large resistance fluctuations are observed in narrow devices near the coercive field, which is associated with collective interference between intersecting paths along domain walls when the device geometry is smaller than the phase coherence length L_{ϕ}. Through measurement of size-dependent breakdown current, we confirmed that the chiral edge states are confined at the physical boundary with its width on the order of Fermi wavelength.

Spin Wave Excitation, Detection, and Utilization in the Organic-Based Magnet, V(TCNE)x (TCNE = Tetracyanoethylene).

Spin waves, quantized as magnons, have low energy loss and magnetic damping, which are critical for devices based on spin-wave propagation needed for information processing devices. The organic-based magnet [V(TCNE)x ; TCNE = tetracyanoethylene; x ≈ 2] has shown an extremely low magnetic damping comparable to, for example, yttrium iron garnet (YIG). The excitation, detection, and utilization of coherent and non-coherent spin waves on various modes in V(TCNE)x is demonstrated and show that the angular momentum carried by microwave-excited coherent spin waves in a V(TCNE)x film can be transferred into an adjacent Pt layer via spin pumping and detected using the inverse spin Hall effect. The spin pumping efficiency can be tuned by choosing different excited spin wave modes in the V(TCNE)x film. In addition, it is shown that non-coherent spin waves in a V(TCNE)x film, excited thermally via the spin Seebeck effect, can also be used as spin pumping source that generates an electrical signal in Pt with a sign change in accordance with the magnetization switching of the V(TCNE)x . Combining coherent and non-coherent spin wave detection, the spin pumping efficiency can be thermally controlled, and new insight is gained for the spintronic applications of spin wave modes in organic-based magnets.

Landau Levels of Topologically-Protected Surface States Probed by Dual-Gated Quantum Capacitance.

Spectroscopy of discrete Landau levels (LLs) in bulk-insulating three-dimensional topological insulators (3D TIs) in perpendicular magnetic field characterizes the Dirac nature of their surface states. Despite a number of studies demonstrating the quantum Hall effect (QHE) of topological surface states, quantitative evaluation of the LL energies, which serve as fundamental electronic quantities for study of the quantum states, is still limited. In this work, we explore the density of states of LLs by measuring quantum capacitance (CQ) in a truly bulk insulating 3D TI via a van der Waals heterostructure configuration. By applying dual-gate voltages, we access the individual surface states' LLs and extract their chemical potentials to quantify the LL spacings of each surface. We evaluate the LLs' energies at two distinguished QH states, namely, dissipationless (ν = ±1) and dissipative (ν = 0) states in the 3D TI.

Tunable Coupling between Surface States of a Three-Dimensional Topological Insulator in the Quantum Hall Regime.

The paired top and bottom Dirac surface states, each associated with a half-integer quantum Hall (QH) effect, and a resultant integer QH conductance (νe^{2}/h), are hallmarks of a three-dimensional topological insulator (TI). In a dual-gated system, chemical potentials of the paired surface states are controlled through separate gates. In this work, we establish tunable capacitive coupling between the surface states of a bulk-insulating TI BiSbTeSe_{2} and study the effect of this coupling on QH plateaus and Landau level (LL) fan diagram via dual-gate control. We observe nonlinear QH transitions at low charge density in strongly coupled surface states, which are related to the charge-density-dependent coupling strength. A splitting of the N=0 LL at the charge neutrality point for thin devices (but thicker than the 2D limit) indicates intersurface hybridization possibly beyond single-particle effects. By applying capacitor charging models to the surface states, we explore their chemical potential as a function of charge density and extract the fundamental electronic quantity of LL energy gaps from dual-gated transport measurements. These studies are essential for the realization of exotic quantum effects such as topological exciton condensation.

Topological Insulator-Based van der Waals Heterostructures for Effective Control of Massless and Massive Dirac Fermions.

Three dimensional (3D) topological insulators (TIs) are an important class of materials with applications in electronics, spintronics and quantum computing. With the recent development of truly bulk insulating 3D TIs, it has become possible to realize surface dominated phenomena in electrical transport measurements e.g. the quantum Hall (QH) effect of massless Dirac fermions in topological surface states (TSS). However, to realize more advanced devices and phenomena, there is a need for a platform to tune the TSS or modify them e.g. gap them by proximity with magnetic insulators, in a clean manner. Here we introduce van der Waals (vdW) heterostructures in the form of topological insulator/insulator/graphite to effectively control chemical potential of the TSS. Two types of gate dielectrics, normal insulator hexagonal boron nitride (hBN) and ferromagnetic insulator Cr2Ge2Te6 (CGT) are utilized to tune charge density of TSS in the quaternary TI BiSbTeSe2. hBN/graphite gating in the QH regime shows improved quantization of TSS by suppression of magnetoconductivity of massless Dirac fermions. CGT/graphite gating of massive Dirac fermions in the QH regime yields half-quantized Hall conductance steps and a measure of the Dirac gap. Our work shows the promise of the vdW platform in creating advanced high-quality TI-based devices.

Enhancement in surface mobility and quantum transport of Bi2-xSbxTe3-ySey topological insulator by controlling the crystal growth conditions.

Despite numerous studies on three-dimensional topological insulators (3D TIs), the controlled growth of high quality (bulk-insulating and high mobility) TIs remains a challenging subject. This study investigates the role of growth methods on the synthesis of single crystal stoichiometric BiSbTeSe2 (BSTS). Three types of BSTS samples are prepared using three different methods, namely melting growth (MG), Bridgman growth (BG) and two-step melting-Bridgman growth (MBG). Our results show that the crystal quality of the BSTS depend strongly on the growth method. Crystal structure and composition analyses suggest a better homogeneity and highly-ordered crystal structure in BSTS grown by MBG method. This correlates well to sample electrical transport properties, where a substantial improvement in surface mobility is observed in MBG BSTS devices. The enhancement in crystal quality and mobility allow the observation of well-developed quantum Hall effect at low magnetic field.

Hierarchical Si/ZnO trunk-branch nanostructure for photocurrent enhancement.

Hierarchical Si/ZnO trunk-branch nanostructures (NSs) have been synthesized by hot wire assisted chemical vapor deposition method for trunk Si nanowires (NWs) on indium tin oxide (ITO) substrate and followed by the vapor transport condensation (VTC) method for zinc oxide (ZnO) nanorods (NRs) which was laterally grown from each Si nanowires (NWs). A spin coating method has been used for zinc oxide (ZnO) seeding. This method is better compared with other group where they used sputtering method for the same process. The sputtering method only results in the growth of ZnO NRs on top of the Si trunk. Our method shows improvement by having the growth evenly distributed on the lateral sides and caps of the Si trunks, resulting in pine-leave-like NSs. Field emission scanning electron microscope image shows the hierarchical nanostructures resembling the shape of the leaves of pine trees. Single crystalline structure for the ZnO branch grown laterally from the crystalline Si trunk has been identified by using a lattice-resolved transmission electron microscope. A preliminary photoelectrochemical (PEC) cell testing has been setup to characterize the photocurrent of sole array of ZnO NR growth by both hydrothermal-grown (HTG) method and VTC method on ITO substrates. VTC-grown ZnO NRs showed greater photocurrent effect due to its better structural properties. The measured photocurrent was also compared with the array of hierarchical Si/ZnO trunk-branch NSs. The cell with the array of Si/ZnO trunk-branch NSs revealed four-fold magnitude enhancement in photocurrent density compared with the sole array of ZnO NRs obtain from VTC processes.