CD44v5 domain regulates crosstalk between TNBC cells and tumor-associated macrophages by enhancing the IL-4R/STAT3 axis.

Triple-negative breast cancer (TNBC) has greater infiltration of M2-like macrophages (TAMs), which enhances cancer cell invasion and leads to a poor prognosis. TNBC progression is mediated by both tumor cells and the tumor microenvironment (TME). Here we elucidate the mechanism of the interaction between TNBC cells and TAMs. In this study, we confirmed that CD44v5 is highly expressed in TNBC, which drives TNBC cell metastasis and promotes TAM polarization by co-localizing with IL4Rα and inhibiting its internalization and degradation, thereby promoting activation of the STAT3/IL6 signaling axis. At the same time, TAMs also facilitate TNBC cell metastasis by secreting IL-4, IL-6, and other cytokines, in which the IL-4/IL-4R/STAT3/IL-6 signaling axis plays the same role for TNBC cells responding to TAMs. Moreover, we found that the above progress could be suppressed when the CD44v5 domain was blocked. We demonstrated that the CD44v5/IL-4R/STAT3/IL-6 signaling pathway plays a key role in TNBC cell metastasis, and in TNBC cells inducing TAM polarization and responding to TAMs, promoting metastasis. Collectively, we suggest that the CD44v5 domain may be a promising target for regulating the TME of TNBC as well as treating TNBC.

A Facile Strategy for the Preparation of MoS3 and its Application as a Negative Electrode for Supercapacitors.

Owing to their graphene-like structure and available oxidation valence states, transition metal sulfides are promising candidates for supercapacitors. Herein, we report the application of MoS3 as a new negative electrode for supercapacitors. MoS3 was fabricated by the facile thermal decomposition of a (NH4 )2 MoS4 precursor. For comparison, samples of MoS3 &MoS2 and MoS2 were also synthesized by using the same method. Moreover, this is the first report of the application of MoS3 as a negative electrode for supercapacitors. MoS3 displayed a high specific capacitance of 455.6 F g(-1) at a current density of 0.5 A g(-1) . The capacitance retention of the MoS3 electrode was 92 % after 1500 cycles, and even 71 % after 5000 cycles. In addition, an asymmetric supercapacitor assembly of MoS3 as the negative electrode demonstrated a high energy density at a high potential of 2.0 V in aqueous electrolyte. These notable results show that MoS3 has significant potential in energy-storage devices.

Highly transparent nonvolatile resistive memory devices from silicon oxide and graphene.

Transparent electronic memory would be useful in integrated transparent electronics. However, achieving such transparency produces limits in material composition, and hence, hinders processing and device performance. Here we present a route to fabricate highly transparent memory using SiO(x) as the active material and indium tin oxide or graphene as the electrodes. The two-terminal, nonvolatile resistive memory can also be configured in crossbar arrays on glass or flexible transparent platforms. The filamentary conduction in silicon channels generated in situ in the SiO(x) maintains the current level as the device size decreases, underscoring their potential for high-density memory applications, and as they are two-terminal based, transitions to three-dimensional memory packages are conceivable. As glass is becoming one of the mainstays of building construction materials, and conductive displays are essential in modern handheld devices, to have increased functionality in form-fitting packages is advantageous.

Nu = 5/2 fractional quantum Hall effect at 10 T: implications for the Pfaffian state.

We report on the magnetotransport (including tilt fields) around Landau level filling factor nu=5/2 in a high-purity modulation-doped GaAs/AlGaAs quantum well with twice the electron density of standard samples. A quantized 5/2 Hall plateau is observed at B approximately = 10 T, with an activation gap approximately 125 mK; the plateau can persist up to approximately 25 degree tilt field. This finding is discussed in the context of a proposed Moore-Read Pfaffian (or anti-Pfaffian) wave function being a possible ground state at 5/2. The tilt fields induce a background resistance at 5/2 that could be either isotropic or anisotropic, depending simply on the in-plane magnetic field direction with respect to the GaAs crystalline axis. Such data indicate a substantial coupling between the 5/2 collective phases and the GaAs crystal.

Observation of a cyclotron harmonic spike in microwave-induced resistances in ultraclean GaAs/AlGaAs quantum wells.

We report the observation of a colossal, narrow resistance peak that arises in ultraclean (mobility ∼3×107 cm²/V s) GaAs/AlGaAs quantum wells (QWs) under millimeter wave irradiation and a weak magnetic field. Such a spike is superposed on the 2nd harmonic microwave-induced resistance oscillations (MIRO) but having an amplitude >300% of the MIRO, and a typical FWHM ∼50 mK, comparable with the Landau level width. Systematic studies show a correlation between the spike and a pronounced negative magnetoresistance in these QWs, suggesting a mechanism based on the interplay of strong scatterers and smooth disorder. Alternatively, the spike may be interpreted as a manifestation of quantum interference between the quadrupole resonance and the higher-order cyclotron transition in well-separated Landau levels.