RESUMEN
With the development of technology, low-temperature plasma plays an increasingly important role in industrial applications. The industrial application of low-temperature plasma has the following requirements for plasma, high electron energy, low macroscopic temperature, and uniformity. Low-temperature plasma driven by nanosecond pulses reflects more significant advantages in these aspects compared to direct current plasma and alternating current plasma. In this paper, a simple topology is proposed, which is based on the pseudospark switch and the diode opening switch. A pulse generator is developed, which can eventually output pulses with an amplitude of 106 kV, a rise time of 15.5 ns, a pulse width of 46 ns, and a maximum repetition rate of 1 kHz on a 260 Ω resistive load. The pulse generator can successfully drive needle-plate discharge plasma in ambient air. It has excellent parameters, stability, compactness, and a long lifetime. The proposed topology may be helpful for nanosecond pulse generators with amplitude ranging from tens to hundreds of kilovolts, which could be widely used in industry.
RESUMEN
Low-temperature plasma technology is widely used in various industrial fields, which require the plasma to be of large volume, diffuse, and stable. Furthermore, previous studies have shown that better plasma performance has been obtained by using generators with a high voltage, a high repetition rate, a fast rise time, and a short pulse duration. In this paper, a novel topology is proposed for such generators, which is based on magnetic switches and diode opening switches. A prototype is developed, and its output characteristics are investigated by varying essential parameters, such as the load resistance and the power supply voltage. The experimental results show that it can generate pulses with a voltage of 30.6 kV, a rise time of 7.1 ns, a pulse duration of 8.2 ns, and a maximum repetition rate of 12 kHz on a 300 Ω resistive load. The prototype has been successfully used to drive uniform plasma in ambient air. In the proposed topology, a diode is added to make the magnetic cores independent of each other, significantly simplifying the design calculation. It may help develop nanosecond solid-state generators.
RESUMEN
An all solid-state high repetitive sub-nanosecond risetime pulse generator featuring low-energy-triggered bulk gallium arsenide (GaAs) avalanche semiconductor switches and a step-type transmission line is presented. The step-type transmission line with two stages is charged to a potential of 5.0 kV also biasing at the switches. The bulk GaAs avalanche semiconductor switch closes within sub-nanosecond range when illuminated with approximately 87 nJ of laser energy at 905 nm in a single pulse. An asymmetric dipolar pulse with peak-to-peak amplitude of 9.6 kV and risetime of 0.65 ns is produced on a resistive load of 50 Ω. A technique that allows for repetition-rate multiplication of pulse trains experimentally demonstrated that the parallel-connected bulk GaAs avalanche semiconductor switches are triggered in sequence. The highest repetition rate is decided by recovery time of the bulk GaAs avalanche semiconductor switch, and the operating result of 100 kHz of the generator is discussed.
RESUMEN
A MHz repetitive and nanosecond pulsed power generator based on the semiconductor opening switch (SOS) is developed, in which the pulse compression unit utilizes several Radio Frequency (RF) MOSFETs and a saturable Linear Transformer Driver (LTD). The RF MOSFETs are employed to obtain the forward pumping current pulses with the duration of tens of nanoseconds; the saturable LTD is used to raise the pulse voltage, to compress the pulse width and to pump SOS reversely. The SOS assembly cuts off the reverse current in a few nanoseconds, leading to a narrow output pulse on an external load. The experimental results show that the amplitude of the output pulse on a 106 Ω resistive load is about 3.8 kV and the width is 2 ns. Due to the repetitive ability of the RF MOSFETs, the generator can operate at a repetitive frequency of higher than 4 MHz in burst mode.
RESUMEN
The operating characteristics of a semiconductor opening switch (SOS) are determined by its pumping circuit parameters. SOS is still able to cut off the current when pumping current duration falls to the order of tens of nanoseconds and a short pulse forms simultaneously in the output load. An all-solid-state repetitive SOS-based short pulse generator (SPG100) with a three-level magnetic pulse compression unit was successfully constructed. The generator adopts magnetic pulse compression unit with metallic glass and ferrite cores, which compresses a 600 V, 10 mus primary pulse into short pulse with forward pumping current of 825 A, 60 ns and reverse pumping current of 1.3 kA, 30 ns. The current is sent to SOS in which the reverse pumping current is interrupted. The generator is capable of providing a pulse with the voltage of 120 kV and duration of 5-6 ns while output load being 125 Omega. The highest repetition rate is up to 1 kHz.