5G Technology in Healthcare and Wearable Devices: A Review.

Wearable devices with 5G technology are currently more ingrained in our daily lives, and they will now be a part of our bodies too. The requirement for personal health monitoring and preventive disease is increasing due to the predictable dramatic increase in the number of aging people. Technologies with 5G in wearables and healthcare can intensely reduce the cost of diagnosing and preventing diseases and saving patient lives. This paper reviewed the benefits of 5G technologies, which are implemented in healthcare and wearable devices such as patient health monitoring using 5G, continuous monitoring of chronic diseases using 5G, management of preventing infectious diseases using 5G, robotic surgery using 5G, and 5G with future of wearables. It has the potential to have a direct effect on clinical decision making. This technology could improve patient rehabilitation outside of hospitals and monitor human physical activity continuously. This paper draws the conclusion that the widespread adoption of 5G technology by healthcare systems enables sick people to access specialists who would be unavailable and receive correct care more conveniently.

Studies of Performance of Cs2TiI6-XBrX (Where x = 0 to 6)-Based Mixed Halide Perovskite Solar Cell with CdS Electron Transport Layer.

The present research work represents the numerical study of the device performance of a lead-free Cs2TiI6-XBrX-based mixed halide perovskite solar cell (PSC), where x = 1 to 5. The open circuit voltage (VOC) and short circuit current (JSC) in a generic TCO/electron transport layer (ETL)/absorbing layer/hole transfer layer (HTL) structure are the key parameters for analyzing the device performance. The entire simulation was conducted by a SCAPS-1D (solar cell capacitance simulator- one dimensional) simulator. An alternative FTO/CdS/Cs2TiI6-XBrX/CuSCN/Ag solar cell architecture has been used and resulted in an optimized absorbing layer thickness at 0.5 µm thickness for the Cs2TiBr6, Cs2TiI1Br5, Cs2TiI2Br4, Cs2TiI3Br3 and Cs2TiI4Br2 absorbing materials and at 1.0 µm and 0.4 µm thickness for the Cs2TiI5Br1 and Cs2TiI6 absorbing materials. The device temperature was optimized at 40 °C for the Cs2TiBr6, Cs2TiI1Br5 and Cs2TiI2Br4 absorbing layers and at 20 °C for the Cs2TiI3Br3, Cs2TiI4Br2, Cs2TiI5Br1 and Cs2TiI6 absorbing layers. The defect density was optimized at 1010 (cm-3) for all the active layers.