Short-term salt stress reduces photosynthetic oscillations under triose phosphate utilization limitation in tomato.

Triose phosphate utilization (TPU) limitation is one of the three biochemical limitations of photosynthetic CO2 assimilation rate in C3 plants. Under TPU limitation, abrupt and large transitions in light intensity cause damped oscillations in photosynthesis. When plants are salt-stressed, photosynthesis is often down-regulated particularly under dynamic light intensity, but how salt stress affects TPU-related dynamic photosynthesis is still unknown. To elucidate this, tomato (Solanum lycopersicum) was grown with and without sodium chloride (NaCl, 100 mM) stress for 13 d. Under high CO2 partial pressure, rapid increases in light intensity caused profound photosynthetic oscillations. Salt stress reduced photosynthetic oscillations in leaves initially under both low- and high-light conditions and reduced the duration of oscillations by about 2 min. Besides, salt stress increased the threshold for CO2 partial pressure at which oscillations occurred. Salt stress increased TPU capacity without affecting Rubisco carboxylation and electron transport capacity, indicating the up-regulation of end-product synthesis capacity in photosynthesis. Thus salt stress may reduce photosynthetic oscillations by decreasing leaf internal CO2 partial pressure and/or increasing TPU capacity. Our results provide new insights into how salt stress modulates dynamic photosynthesis as controlled by CO2 availability and end-product synthesis.

Fabry-Pérot resonant avalanche-mode silicon LEDs for tunable narrow-band emission.

We report on the effect of Fabry-Pérot (FP) resonance on hot-carrier electroluminescence (EL) spectra and the optical power efficiencies of silicon (Si) avalanche-mode (AM) LEDs in the wavelength range from 500 nm to 950 nm. The LEDs, fabricated in a silicon-on-insulator photonics technology, consist of symmetric p-n junctions placed within a 0.21 µm thick Si micro-ring of varying width and radius. We show that the peak wavelength in the EL-spectra can be tuned within a range of 100 nm by varying the ring width from 0.16 µm to 0.30 µm, which is explained by FP resonance. The measured EL-spectra features relatively narrow bands (with a spectral width of ∼50 nm) with high intensities compared to conventional Si AMLEDs. By varying the ring radius and using a high doping level, we obtain a record high optical power efficiency of 3.2×10-5. Our work is a breakthrough in engineering the EL spectrum of Si, foreseen to benefit the performance of Si-integrated optical interconnects and sensors.

Ultrasound Pulse Emission Spectroscopy Method to Characterize Xylem Conduits in Plant Stems.

Although it is well known that plants emit acoustic pulses under drought stress, the exact origin of the waveform of these ultrasound pulses has remained elusive. Here, we present evidence for a correlation between the characteristics of the waveform of these pulses and the dimensions of xylem conduits in plants. Using a model that relates the resonant vibrations of a vessel to its dimension and viscoelasticity, we extract the xylem radii from the waveforms of ultrasound pulses and show that these are correlated and in good agreement with optical microscopy. We demonstrate the versatility of the method by applying it to shoots of ten different vascular plant species. In particular, for Hydrangea quercifolia, we further extract vessel element lengths with our model and compare them with scanning electron cryomicroscopy. The ultrasonic, noninvasive characterization of internal conduit dimensions enables a breakthrough in speed and accuracy in plant phenotyping and stress detection.

Composite GaN-C-Ga ("GaCN") Layers with Tunable Refractive Index.

This article describes novel composite thin films consisting of GaN, C, and Ga (termed "GaCN", as an analogue to BCN and other carbonitrides) as a prospective material for future optical applications. This is due to their tunable refractive index that depends on the carbon content. The composites are prepared by introducing alternating pulses of trimethylgallium (TMG) and ammonia (NH3) on silicon substrates to mimic an atomic layer deposition process. Because the GaCN material is hardly reported to the best of our knowledge, a comprehensive characterization is performed to investigate into its chemical nature, primarily to determine whether or not it exists as a single-phase material. It is revealed that GaCN is a composite, consisting of phase-segregated, nanoscale clusters of wurtzitic GaN polycrystals, in addition to inclusions of carbon, nitrogen, and gallium, which are chemically bonded into several forms, but not belonging to the GaN crystals itself. By varying the deposition temperature between 400 and 600 °C and the NH3 partial pressure between 0.7 × 10-3 and 7.25 mbar, layers with a wide compositional range of Ga, C, and N are prepared. The role of carbon on the GaCN optical properties is significant: an increase of the refractive index from 2.19 at 1500 nm (for carbon-free polycrystalline GaN) to 2.46 (for GaCN) is achieved by merely 10 at. % of carbon addition. The presence of sp2-hybridized C=N clusters and carbon at the interface of the GaN polycrystals are proposed to determine their optical properties. Furthermore, the formation of the GaN polycrystals in the composite occurs through a TMG:NH3 surface-adduct assisted pathway, whereas the inclusions of carbon, nitrogen, and gallium are formed by the thermal decomposition of the chemisorbed TMG species.

Low power wide spectrum optical transmitter using avalanche mode LEDs in SOI CMOS technology.

This paper presents a low power monolithically integrated optical transmitter with avalanche mode light emitting diodes in a 140 nm silicon-on-insulator CMOS technology. Avalanche mode LEDs in silicon exhibit wide-spectrum electroluminescence (400 nm < λ < 850 nm), which has a significant overlap with the responsivity of silicon photodiodes. This enables monolithic CMOS integration of optocouplers, for e.g. smart power applications requiring high data rate communication with a large galvanic isolation. To ensure a certain minimum number of photons per data pulse (or per bit), light emitting diode drivers must be robust against process, operating conditions and temperature variations of the light emitting diode. Combined with the avalanche mode light emitting diode's steep current-voltage curve at relatively high breakdown voltages, this conventionally results in high power consumption and significant heating. The presented transmitter circuit is intrinsically robust against these issues, thereby enabling low power operation.

Monolithic optical link in silicon-on-insulator CMOS technology.

This work presents a monolithic laterally-coupled wide-spectrum (350 nm < λ < 1270 nm) optical link in a silicon-on-insulator CMOS technology. The link consists of a silicon (Si) light-emitting diode (LED) as the optical source and a Si photodiode (PD) as the detector; both realized by vertical abrupt n+p junctions, separated by a shallow trench isolation composed of silicon dioxide. Medium trench isolation around the devices along with the buried oxide layer provides galvanic isolation. Optical coupling in both avalanche-mode and forward-mode operation of the LED are analyzed for various designs and bias conditions. From both DC and pulsed transient measurements, it is further shown that heating in the avalanche-mode LED leads to a slow thermal coupling to the PD with time constants in the ms range. An integrated heat sink in the same technology leads to a ∼ 6 times reduction in the change in PD junction temperature per unit electrical power dissipated in the avalanche-mode LED. The analysis paves way for wide-spectrum optical links integrated in smart power technologies.