Sesame: a 2-dimensional solar cell modeling tool.

This work introduces a new software package "Sesame" for the numerical computation of classical semiconductor equations. It supports 1 and 2-dimensional systems and provides tools to easily implement extended defects such as grain boundaries or sample surfaces. Sesame is designed to facilitate fast exploration of the system parameter space and to visualize local charge transport properties. Sesame has been benchmarked against other software packages, and results for single crystal and polycrystalline CdS-CdTe heterojunctions are presented. Sesame is distributed as a Python package or as a standalone GUI application, and is available at https://pages.nist.gov/sesame/.

Depletion region surface effects in electron beam induced current measurements.

Electron beam induced current (EBIC) is a powerful characterization technique which offers the high spatial resolution needed to study polycrystalline solar cells. Current models of EBIC assume that excitations in the p-n junction depletion region result in perfect charge collection efficiency. However we find that in CdTe and Si samples prepared by focused ion beam (FIB) milling, there is a reduced and nonuniform EBIC lineshape for excitations in the depletion region. Motivated by this, we present a model of the EBIC response for excitations in the depletion region which includes the effects of surface recombination from both charge-neutral and charged surfaces. For neutral surfaces we present a simple analytical formula which describes the numerical data well, while the charged surface response depends qualitatively on the location of the surface Fermi level relative to the bulk Fermi level. We find the experimental data on FIB-prepared Si solar cells is most consistent with a charged surface, and discuss the implications for EBIC experiments on polycrystalline materials.

Probing surface recombination velocities in semiconductors using two-photon microscopy.

The determination of minority-carrier lifetimes and surface recombination velocities is essential for the development of semiconductor technologies such as solar cells. The recent development of two-photon time-resolved microscopy allows for better measurements of bulk and subsurface interfaces properties. Here we analyze the diffusion problem related to this optical technique. Our three-dimensional treatment enables us to separate lifetime (recombination) from transport effects (diffusion) in the photoluminescence intensity. It also allows us to consider surface recombination occurring at a variety of geometries: a single plane (representing an isolated exposed or buried interface), two parallel planes (representing two inequivalent interfaces), and a spherical surface (representing the enclosing surface of a grain boundary). We provide fully analytical results and scalings directly amenable to data fitting, and apply those to experimental data collected on heteroepitaxial CdTe/ZnTe/Si.

Charged grain boundaries reduce the open-circuit voltage of polycrystalline solar cells-An analytical description.

Analytic expressions are presented for the dark current-voltage relation J(V ) of a pn+ junction with positively charged columnar grain boundaries with high defect density. These expressions apply to non-depleted grains with sufficiently high bulk hole mobilities. The accuracy of the formulas is verified by direct comparison to numerical simulations. Numerical simulations further show that the dark J(V ) can be used to determine the open-circuit potential Voc of an illuminated junction for a given short-circuit current density Jsc. A precise relation between the grain boundary properties and Voc is provided, advancing the understanding of the influence of grain boundaries on the efficiency of thin film polycrystalline photovoltaics like CdTe and Cu(In, Ga)Se2.

The a.c. Josephson effect without superconductivity.

Superconductivity derives its most salient features from the coherence of the associated macroscopic wave function. The related physical phenomena have now moved from exotic subjects to fundamental building blocks for quantum circuits such as qubits or single photonic modes. Here we predict that the a.c. Josephson effect-which transforms a d.c. voltage Vb into an oscillating signal cos (2eVbt/h)-has a mesoscopic counterpart in normal conductors. We show that when a d.c. voltage Vb is applied to an electronic interferometer, there exists a universal transient regime where the current oscillates at frequency eVb/h. This effect is not limited by a superconducting gap and could, in principle, be used to produce tunable a.c. signals in the elusive 0.1-10-THz 'terahertz gap'.

Dynamical control of interference using voltage pulses in the quantum regime.

As a general trend, nanoelectronics experiments are shifting towards frequencies so high that they become comparable to the device's internal characteristic time scales, resulting in new opportunities for studying the dynamical aspects of quantum mechanics. Here we theoretically study how a voltage pulse (in the quantum regime) propagates through an electronic interferometer (Fabry-Perot or Mach-Zehnder). We show that extremely fast pulses provide a conceptually new tool for manipulating quantum information: the possibility to dynamically engineer the interference pattern of a quantum system. Striking physical signatures are associated with this new regime: restoration of the interference in presence of large bias voltages; negative currents with respect to the direction of propagation of the voltage pulse; and oscillation of the total transmitted charge with the total number of injected electrons. The present findings have been made possible by the recent unlocking of our capability for simulating time-resolved quantum nanoelectronics of large systems.