High-Performance Thermomagnetic Gd-Si-Ge Alloys.

Exploring low-grade waste heat energy harvesting is crucial to address increasing environmental concerns. Thermomagnetic materials are magnetic phase change materials that enable energy harvesting from low-temperature gradients. To achieve a high thermomagnetic conversion efficiency, there are three main material requirements: (i) magnetic phase transition near room temperature, (ii) substantial change in magnetization with temperature, and (iii) high thermal conductivity. Here, we demonstrate a high-performance Gd5Si2.4Ge1.6 thermomagnetic alloy that meets these three requirements. The magnetic phase transition temperature was successfully shifted to 306 K by introducing Ge doping in Gd5Si4, and a sharper and more symmetric magnetization behavior with saturation magnetization of Mmax = 70 emu/g at a 2 T magnetic field was achieved in the ferromagnetic state. The addition of SeS2, as a low-temperature sintering aid, to the Gd-Si-Ge alloy improved the material's density and thermal conductivity by ∼45 and ∼275%, respectively. Our results confirm that the (Gd5Si2.4Ge1.6)0.9(SeS2)0.1 alloy is a suitable composite material for low-grade waste heat recovery in thermomagnetic applications.

High-Performance Skutterudite/Half-Heusler Cascaded Thermoelectric Module Using the Transient Liquid Phase Sintering Joining Technique.

Thermoelectric (TE) materials have made rapid advancement in the past decade, paving the pathway toward the design of solid-state waste heat recovery systems. The next requirement in the design process is realization of full-scale multistage TE devices in the medium to high temperature range for enhanced power generation. Here, we report the design and manufacturing of full-scale skutterudite (SKD)/half-Heusler (hH) cascaded TE devices with 49-couple TE legs for each stage. The automated pick-and-place tool is employed for module fabrication providing overall high manufacturing process efficiency and repeatability. Optimized Ti/Ni/Au coating layers are developed for metallization as the diffusion barrier and electrode contact layers. The Cu-Sn transient liquid phase sintering technique is utilized for SKD and hH stages, which provides a high strength bonding and very low contact resistance. A remarkably high output power of 38.3 W with a device power density of 2.8 W·cm-2 at a temperature gradient of 513 °C is achieved. These results provide an avenue for widespread utilization of TE technology in waste heat recovery applications.

Defect-Engineering-Stabilized AgSbTe2 with High Thermoelectric Performance.

Thermoelectric (TE) generators enable the direct and reversible conversion between heat and electricity, providing applications in both refrigeration and power generation. In the last decade, several TE materials with relatively high figures of merit (zT) have been reported in the low- and high-temperature regimes. However, there is an urgent demand for high-performance TE materials working in the mid-temperature range (400-700 K). Herein, p-type AgSbTe2 materials stabilized with S and Se co-doping are demonstrated to exhibit an outstanding maximum figure of merit (zTmax ) of 2.3 at 673 K and an average figure of merit (zTave ) of 1.59 over the wide temperature range of 300-673 K. This exceptional performance arises from an enhanced carrier density resulting from a higher concentration of silver vacancies, a vastly improved Seebeck coefficient enabled by the flattening of the valence band maximum and the inhibited formation of n-type Ag2 Te, and ahighly improved stability beyond 673 K. The optimized material is used to fabricate a single-leg device with efficiencies up to 13.3% and a unicouple TE device reaching energy conversion efficiencies up to 12.3% at a temperature difference of 370 K. These results highlight an effective strategy to engineer high-performance TE material in the mid-temperature range.

Generic Approach for Contacting Thermoelectric Solid Solutions: Case Study in n- and p-Type Mg2Si0.3Sn0.7.

Metallization (known as contacting) of thermoelectric (TE) legs is vital to the long-term performance of a TE device. It is often observed that the compositional changes in a TE solid solution may render a given contact material unsuitable due to a mismatch in the thermal expansion coefficient values. Finding suitable contact materials for TE solid solutions (which often are the best TE materials) remains a challenge. In this work, we propose a multilayer single-step approach in which the same combination of contact materials can be used for a wide compositional range in a solid solution. The outer layer is a metal foil, which helps in creating an Ohmic contact with the interconnects. The intermediate layer is a mixture of the TE material and a metal powder, which results in the formation of the diffusion barrier. The innermost layer is the TE material, which is the active component of the device. The strategy was applied on n- and p-doped Mg2Si0.3Sn0.7 with elemental Cu and Ni providing the desired interface functionalities. Single-step compaction was carried out using the monoblock sintering technique. Microscopic investigation reveals the formation of a well-bonded crack-free interface. Various intermetallic phases were identified at the interface, and the formation of the MgNi2Sn phase was found to be critical to prevent any interdiffusion of elements. Electrical contact resistance (rc) measurements were conducted, and low values of 3 and 19 µΩ cm2 were measured in n- and p-type legs, respectively. The contacted TE legs were further annealed at 400 °C for 7 days to check their stability. Microstructural and electrical resistance measurements reveal minimal changes in the interface layer and rc values, indicating the workability of the multilayer technique.