Paramagnetic gold in a highly disordered Au-Ni-O alloy.

Magnetic materials are usually classified into a distinct category such as diamagnets, paramagnets or ferromagnets. The enormous progress in materials science allows one nowadays, however, to change the magnetic nature of an element in a material. Gold, in bulk form, is traditionally a diamagnet. But in a ferromagnetic environment, it can adopt an induced ferromagnetic moment. Moreover, the growth of gold under certain conditions may lead to a spontaneous ferromagnetic or paramagnetic response. Here, we report on paramagnetic gold in a highly disordered Au-Ni-O alloy and focus on the unusual magnetic response. Such materials are mainly considered for plasmonic applications. Thin films containing Au, Ni and NiO are fabricated by co-deposition of Ni and Au in a medium vacuum of 2 × 10-2 mbar. As a result, Au is in a fully disordered state forming in some cases isolated nanocrystallites of up to 4 nm in diameter as revealed by high resolution transmission electron microscopy. The disorder and the environment, which is rich in oxygen, lead to remarkable magnetic properties of Au: an induced ferromagnetic and a paramagnetic state. This can be proven by measuring the x-ray magnetic circular dichroism. Our experiments show a way to establish and monitor Au paramagnetism in alloys.

A cost-effective growth of SiO(x) thin films by reactive sputtering: photoluminescence tuning.

We present a new cost-effective method to produce substoichiometric SiO2 thin films by means of a simple sputter-coater operated at a base pressure of 1 x 10(-3) mbar. During sputtering air is introduced through a fine valve so that the sputtering gas is a mixture of air/Ar. High-resolution electron microscopy shows the formation of amorphous SiO(x) thin films for the as-deposited samples. The index x approaches 1 when the ratio of the partial pressure of air/Ar tends to 0.1. On the other hand, pure silica is formed when the ratio of the partial pressure of air/Ar approaches 0.5. The films in the as-deposited state show intense green-yellow photoluminescence. This fades away with short annealing under air at 950 degrees C. If on the other hand, prolonged annealing is performed under Argon atmosphere at 1000 degrees C, red-infrared photoluminescence is recorded due to the formation of Si nanocrystals embedded in SiO2. This simple method could be suitable for the production of thin SiO(x) films with embedded nanocrystals for optoelectronic or photovoltaic applications.