Effects of Thermal Annealing and Selective Chemical Etching on Structural and Optical Properties of GaAsBi Epilayer with Droplet Systems.

A GaAs1-xBix layer was grown by molecular beam epitaxy (MBE) with a low Bi content (2.3%) on GaAs maintaining the substrate at a non-rotating state and was then annealed at 750 °C, 800 °C and 850 °C. Each sample that was covered with droplets was investigated by using the Atomic Force Microscopy (AFM), Electrostatic Force Microscopy (EFM) and Photoluminescence (PL) techniques. The surface properties of the GaAs1-xBix layer were investigated by AFM and observed to have a droplet system, which was composed of a donut and a tail. The optical quality of the samples was enhanced after thermal annealing up to 800 °C, and the maximum PL intensity was obtained at 750 °C. AFM images revealed that the shape of the droplet and tail changed with increasing annealing temperature. EFM images revealed a phase separation on the surface droplet system. To explore the nature of the droplets, previously claimed to be made of Ga and/or Bi, and their effect on PL spectrum, a chemical etch procedure was carried out by using diluted solutions of H2SO4 and/or HCl. We showed that droplets may be efficiently removed from the surface, and PL intensity could be improved by using a proper sequence of chemical etching procedures. Furthermore, the presence of two different phases for the droplet-system observed by EFM was also confirmed by the selective etching procedure.

Thermal oxidation and hydrofluoric acid treatment on the sandblasted implant surface: A histologic histomorphometric and biomechanical study.

OBJECTIVES: This study aimed to analyze and compare the topographical, chemical, and osseointegration characteristics of a sandblasted acid-etched surface (SLA group), a sandblasted thermally oxidized surface (SO group), and a surface chemically modified by hydrofluoric (HF) acid (SOF group). MATERIALS AND METHODS: Following the preparation and characterization of the relevant surfaces, 90 implants (30 for each group) were placed on the pelvic bone of six sheep. Resonance frequency analysis (RFA), insertion (ITV), removal torque value (RTV), and histomorphometric analyses (BIC%) were performed after three and 8 weeks of healing. The results were analyzed by nonparametric tests (p < 0.05). RESULTS: The roughness value (Ra) in the SOF group was significantly lower than the SLA and the SO group (p = 0.136, p < 0.001, respectively). This resulted in a substantially inferior ITV 14.83 N/cm (SD: 4.04) than those achieved in the SLA and SO groups (19.50 (SD: 6.07) and 20.17 N/cm (SD: 8.95), respectively; p = 0.001). A statistically significant change in the RFA from the baseline (47.36 ISQ, SD: 6.93) to the 3rd week (62.56 ISQ, SD: 5.29) was observed in the SOF group only (p = 0.008). The highest postplacement RFA and RTV values were measured from the SLA group (61.11 ISQ, SD: 7.51 and 78.22 N/cm, SD: 28.73). The early-term (3rd week) BIC% was highest in the SO group (39.93%, SD: 16.14). After 8 weeks, the differences in BIC% values were statistically not significant. CONCLUSIONS: Adjunct HF acid application on the thermally oxidized surface did not provide an additional benefit compared to the sandblasted and acid-etched surface (SLA group).

Bismuth-induced effects on optical, lattice vibrational, and structural properties of bulk GaAsBi alloys.

Bulk GaAs1 - xBix/GaAs alloys with various bismuth compositions are studied using power- and temperature-dependent photoluminescence (PL), Raman scattering, and atomic force microscopy (AFM). PL measurements exhibit that the bandgap of the alloy decreases with increasing bismuth composition. Moreover, PL peak energy and PL characteristic are found to be excitation intensity dependent. The PL signal is detectable below 150 K at low excitation intensities, but quenches at higher temperatures. As excitation intensity is increased, PL can be observable at room temperature and PL peak energy blueshifts. The quenching temperature of the PL signal tends to shift to higher temperatures with increasing bismuth composition, giving rise to an increase in Bi-related localization energy of disorders. The composition dependence of the PL is also found to be power dependent, changing from about 63 to 87 meV/Bi% as excitation intensity is increased. In addition, S-shaped temperature dependence at low excitation intensities is observed, a well-known signature of localized levels above valence band. Applying Varshni's law to the temperature dependence of the PL peak energy, the concentration dependence of Debye temperature (ß) and thermal expansion coefficient (α) are determined. AFM observations show that bismuth islands are randomly distributed on the surface and the diameter of the islands tends to increase with increasing bismuth composition. Raman scattering spectra show that incorporation of Bi into GaAs causes a new feature at around 185 cm-1 with slightly increasing Raman intensity as the Bi concentration increases. A broad feature located between 210 and 250 cm-1 is also observed and its intensity increases with increasing Bi content. Furthermore, the forbidden transverse optical (TO) mode becomes more pronounced for the samples with higher bismuth composition, which can be attributed to the effect of Bi-induced disorders on crystal symmetry. PACS: 78.55Cr 78.55-m 78.20-e 78.30-j.

Preserving charge and oxidation state of Au(III) ions in an agent-functionalized nanocrystal model system.

Supporting functional molecules on crystal facets is an established technique in nanotechnology. To preserve the original activity of ionic metallorganic agents on a supporting template, conservation of the charge and oxidation state of the active center is indispensable. We present a model system of a metallorganic agent that, indeed, fulfills this design criterion on a technologically relevant metal support with potential impact on Au(III)-porphyrin-functionalized nanoparticles for an improved anticancer-drug delivery. Employing scanning tunneling microscopy and -spectroscopy in combination with photoemission spectroscopy, we clarify at the single-molecule level the underlying mechanisms of this exceptional adsorption mode. It is based on the balance between a high-energy oxidation state and an electrostatic screening-response of the surface (image charge). Modeling with first principles methods reveals submolecular details of the metal-ligand bonding interaction and completes the study by providing an illustrative electrostatic model relevant for ionic metalorganic agent molecules, in general.