RESUMEN
We demonstrate an extended short-wave infrared (e-SWIR) photodetector composed of an InAs/GaAs(111)A heterostructure with interface misfit dislocations. The layer structure of the photodetector consists simply of an n-InAs optical absorption layer directly grown with a thin undoped-GaAs spacer layer on n-GaAs by molecular beam epitaxy. The lattice mismatch was abruptly relaxed by forming a misfit dislocation network at the initial stage of the InAs growth. We found high-density threading dislocations (1.5 × 109 cm-2) in the InAs layer. The current-voltage characteristics of the photodetector at 77 K had a very low dark current density (<1 × 10-9 A cm-2) at a positive applied voltage (electrons flow from n-GaAs to n-InAs) of up to â¼+1 V. Simulation of the band structure revealed that the direct connection of GaAs and InAs and the formation of interfacial states by the misfit dislocations play significant positive roles in suppressing dark current. Under illumination with e-SWIR light at 77 K, a clear photocurrent signal was observed with a 2.6 µm cutoff wavelength, which is consistent with the bandgap of InAs. We also demonstrated e-SWIR detection at room temperature with a 3.2 µm cutoff wavelength. The maximum detectivity at 294 K exceeds 2 × 108 cm Hz0.5 W-1 for the detection of e-SWIR light at 2 µm.
RESUMEN
Complex lightwave manipulation such as broadband absorption has been realized with metasurfaces based on laterally arranged metal-dielectric-metal cavities with different geometries. However, application of these metasurfaces for optoelectronic devices by incorporating functional dielectrics remains challenging. Here, we integrate a quantum well infrared photodetector (QWIP) with a metasurface made of a patchwork of square cavities with different dimensions arranged in a subwavelength unit cell. Our detector realizes wideband photoresponse approaching the entire responsivity spectrum of the QWIP-single-sized square cavities can utilize only 60% of the possible bandwidth-and external quantum efficiencies of up to 78% at 6.8 µm. Our highly flexible design scheme enables integration of photodetectors and metasurfaces with arbitrary arrangements of cavities selectively responding to incidence with a specific wavefront.
RESUMEN
Optical patch antennas sandwiching dielectrics between metal layers have been used as deep subwavelength building blocks of metasurfaces for perfect absorbers and thermal emitters. However, for applications of these metasurfaces for optoelectronic devices, wiring to each electrically isolated antenna is indispensable for biasing and current flow. Here we show that geometrically engineered metallic wires interconnecting the antennas can function to synchronize the optical phases for promoting coherent resonance, not only as electrical conductors. Antennas connected with optimally folded wires are applied to intersubband infrared photodetectors with a single 4-nm-thick quantum well, and a polarization-independent external quantum efficiency as high as 61% (responsivity 3.3 A W-1, peak wavelength 6.7 µm) at 78 K, even extending to room temperature, is demonstrated. Applications of synchronously wired antennas are not limited to photodetectors, but are expected to serve as a fundamental architecture of arrayed subwavelength resonators for optoelectronic devices such as emitters and modulators.