Cellulose degradation in Gastrophysa viridula (Coleoptera: Chrysomelidae): functional characterization of two CAZymes belonging to glycoside hydrolase family 45 reveals a novel enzymatic activity.

Cellulose is a major component of the primary and secondary cell walls in plants. Cellulose is considered to be the most abundant biopolymer on Earth and represents a large potential source of metabolic energy. Yet, cellulose degradation is rare and mostly restricted to cellulolytic microorganisms. Recently, various metazoans, including leaf beetles, have been found to encode their own cellulases, giving them the ability to degrade cellulose independently of cellulolytic symbionts. Here, we analyzed the cellulosic capacity of the leaf beetle Gastrophysa viridula, which typically feeds on Rumex plants. We identified three putative cellulases member of two glycoside hydrolase (GH) families, namely GH45 and GH9. Using heterologous expression and functional assays, we demonstrated that both GH45 proteins are active enzymes, in contrast to the GH9 protein. One GH45 protein acted on amorphous cellulose as an endo-ß-1,4-glucanase, whereas the other evolved to become an endo-ß-1,4-xyloglucanase. We successfully knocked down the expression of both GH45 genes using RNAi, but no changes in weight gain or mortality were observed compared to control insects. Our data indicated that the breakdown of these polysaccharides in G. viridula may facilitate access to plant cell content, which is rich in nitrogen and simple sugars.

Emission dynamics of hybrid plasmonic gold/organic GaN nanorods.

We studied the emission of bare and aluminum quinoline (Alq3)/gold coated wurtzite GaN nanorods by temperature- and intensity-dependent time-integrated and time-resolved photoluminescence (PL). The GaN nanorods of ∼1.5 µm length and ∼250 nm diameter were grown by plasma-assisted molecular beam epitaxy. Gold/Alq3 coated GaN nanorods were synthesized by organic molecular beam deposition. The near band-edge and donor-acceptor pair luminescence was investigated in bare GaN nanorods and compared with multilevel model calculations providing the dynamical parameters for electron-hole pairs, excitons, impurity bound excitons, donors and acceptors. Subsequently, the influence of a 10 nm gold coating without and with an Alq3 spacer layer was studied and the experimental results were analyzed with the multilevel model. Without a spacer layer, a significant PL quenching and lifetime reduction of the near band-edge emission is found. The behavior is attributed to surface band-bending and Förster energy transfer from excitons to surface plasmons in the gold layer. Inserting a 5 nm Alq3 spacer layer reduces the PL quenching and lifetime reduction which is consistent with a reduced band-bending and Förster energy transfer. Increasing the spacer layer to 30 nm results in lifetimes which are similar to uncoated structures, showing a significantly decreased influence of the gold coating on the excitonic dynamics.

Fermi level and bands offsets determination in insulating (Ga,Mn)N/GaN structures.

The Fermi level position in (Ga,Mn)N has been determined from the period-analysis of GaN-related Franz-Keldysh oscillation obtained by contactless electroreflectance in a series of carefully prepared by molecular beam epitaxy GaN/Ga1-xMnxN/GaN(template) bilayers of various Mn concentration x. It is shown that the Fermi level in (Ga,Mn)N is strongly pinned in the middle of the band gap and the thickness of the depletion layer is negligibly small. For x > 0.1% the Fermi level is located about 1.25-1.55 eV above the valence band, that is very close to, but visibly below the Mn-related Mn2+/Mn3+ impurity band. The accumulated data allows us to estimate the Mn-related band offsets at the (Ga,Mn)N/GaN interface. It is found that most of the band gap change in (Ga,Mn)N takes place in the valence band on the absolute scale and amounts to -0.028 ± 0.008 eV/% Mn. The strong Fermi level pinning in the middle of the band gap, no carrier conductivity within the Mn-related impurity band, and a good homogeneity enable a novel functionality of (Ga,Mn)N as a semi-insulating buffer layers for applications in GaN-based heterostuctures.

Light-emitting diode based on mask- and catalyst-free grown N-polar GaN nanorods.

We report on the fabrication of a light-emitting diode based on GaN nanorods containing InGaN quantum wells. The unique system consists of tilted N-polar nanorods of high crystalline quality. Photoluminescence, electroluminescence, and spatially resolved cathodoluminescence investigations consistently show quantum well emission around 2.6 eV. Scanning transmission electron microscopy and energy-dispersive x-ray spectroscopy measurements reveal a truncated shape of the quantum wells with In contents of (15 ± 5)%.

A structural investigation of highly ordered catalyst- and mask-free GaN nanorods.

GaN nanorods were grown on r-plane sapphire substrates by a two-step approach. Nucleation sites for the nanorods were provided by the formation of AlN islands during nitridation in a metal organic vapor phase system. These islands are a-plane oriented as expected for nitride growth on r-plane sapphire. The nanorods themselves were grown by plasma assisted molecular beam epitaxy. The nanorods show an inclination towards the surface normal of 28.3° and are highly ordered. Studies with high resolution x-ray diffraction polar plots reveal the epitaxial relationship between the substrate and nanorods as a c-direction growth on inclined m-plane facets of the nitridated islands. The determined lattice constants show nanorods which are strain free. The growth direction of the nanorods has been confirmed in a transmission electron microscope by convergent beam electron diffraction patterns to be in the N-polar [Formula: see text] direction.

Highly ordered catalyst-free and mask-free GaN nanorods on r-plane sapphire.

Self-organized and highly ordered GaN nanorods were grown without catalyst on r-plane sapphire using a combination of molecular beam epitaxy and metal-organic vapor-phase epitaxy. AlN nucleation centers for the nanorods were prepared by nitridation of the sapphire in a metal-organic vapor-phase epitaxy reactor, while the nanorods were grown by molecular beam epitaxy. A coalesced two-dimensional GaN layer was observed between the nanorods. The nanorods are inclined by 62 degrees towards the [Formula: see text]-directions of the a-plane GaN layer. The high degree of ordering and the structural perfection were confirmed by micro-photoluminescence measurements.

The influence of natural enemies on wing induction in Aphis fabae and Megoura viciae (Hemiptera: Aphididae).

Previous studies have shown that the aphid species, Aphis fabae Scopoli and Megoura viciae Buckton, do not produce winged offspring in the presence of natural enemies, in contrast to results for the pea aphid (Acyrthosiphon pisum (Harris)) and the cotton aphid (Aphis gossypii Glover); but these studies did not involve exposing aphids directly to natural enemies. We exposed colonies of both A. fabae and M. viciae to foraging lacewing (Chrysoperla carnea (Stephens)) larvae and found that the predators did not induce winged morphs among offspring compared to unexposed controls. Colonies of A. fabae responded to an increase in aphid density with increasing winged morph production, while such response was not found for M. viciae. We suggest that different aphid species differ in their susceptibility to natural enemy attack, as well as in their sensitivity to contact.

The importance of antennae for pea aphid wing induction in the presence of natural enemies.

The pea aphid Acyrthosiphon pisum Harris has been shown to produce an increasing proportion of winged morphs among its offspring when exposed to natural enemies, in particular hoverfly larvae, lacewing larvae, adult and larval ladybirds and aphidiid parasitoids. While these results suggest that wing induction in the presence of predators and parasitoids is a general response of the pea aphid, the cues and mechanisms underlying this response are still unclear. Tactile stimuli and the perception of chemical signals as well as visual signals are candidates for suitable cues in the presence of natural enemies. In this paper the hypothesis that the aphids' antennae are crucial for the wing induction in the presence of natural enemies is tested. Antennae of pea aphids were ablated and morph production was scored when aphids were reared either in the presence or the absence of predatory lacewing larvae over a six-day period. Ablation of antennae resulted in a drastic drop in the proportion of winged morphs among the offspring, both in the presence and the absence of a predator whereas predator presence increased wing induction in aphids with intact antennae, as reported in previous experiments. The results show that antennae are necessary for wing induction in the presence of natural enemies. Critical re-examination of early work on the importance of aphid antennae and tactile stimuli for wing induction suggests that a combination of tactile and chemical cues is likely to be involved not only in predator-induced wing formation but also for wing induction in response to factors such as crowding in the aphid colony.