RESUMEN
A rapid metallohydrogelation strategy has been developed of magnesium(II)-ion using trimethylamine as a low molecular weight gelator in water medium at room temperature. The mechanical property of the synthesized metallohydrogel material is established through the rheological analysis. The nano-rose like morphological patterns of Mg(II)-metallohydrogel are characterized through field emission scanning electron microscopic study. The energy dispersive X-ray elemental mapping analysis confirms the primary gel forming elements of Mg(II)-metallohydrogel. The possible metallohydrogel formation strategy has been analyzed through FT-IR spectroscopic study. In this work, magnesium(II) metallohydrogel (Mg@TMA) based metal-semiconductor-metal structures have been developed and charge transport behaviour is studied. Here, it is confirmed that the magnesium(II) metallohydrogel (Mg@TMA) based resistive random access memory (RRAM) device is showing bipolar resistive switching behaviour at room temperature. We have also explored the mechanism of resistive switching behaviour using the formation (rupture) of conductive filaments between the metal electrodes. This RRAM devices exhibit excellent switching endurance over 10,000 switching cycles with a large ON/OFF ratio (~ 100). The easy fabrication techniques, robust resistive switching behaviour and stability of the present system makes these structures preferred candidate for applications in non-volatile memory design, neuromorphic computing, flexible electronics and optoelectronics etc.
RESUMEN
Water harvesting from the ubiquitous moisture is pivotal for delivering fresh water to earth's arid/semiarid regions, and sequestration of iodine from the solution is crucial for environmental safety due to its severe effect on human metabolic processes. In this context, herein, a multifunctional supramolecular metallohydrogel (Mg@TAEA) is synthesized through direct mixing of magnesium nitrate hexahydrate and the low molecular weight gelator tris(2-aminoethyl)amine. Electron microscopy reveals that Mg@TAEA is sculptured in vertically grown well-oriented micrometer-sized flakes. The porous crystalline material (52 m2/g) was found to be an efficacious host matrix for water harvesting from moisture (847 mg/g). Mg@TAEA shows effective (513 mg/g) iodine sequestration from solution and adsorption of carbon dioxide (15 mg/g). The wide bandgap semiconducting Mg@TAEA (3.6 eV) material is a potential candidate for building memory devices, and the Ion/Ioff ratio of the device based on the indium tin oxide (ITO)/Mg@TAEA/Ag heterostructure was found to be â¼62. We further extended our work by analyzing the charge transport properties of the system and found space charge limited conduction (SCLC) and trap-filled SCLC to be responsible for the nonlinear transport behavior observed in the device.