Fundamental crystal field excitations in magnetic semiconductor SnO2: Mn, Fe, Co, Ni.

Directly measuring elementary electronic excitations in dopant 3d metals is essential to understanding how they function as part of their host material. Through calculated crystal field splittings of the 3d electron band it is shown how transition metals Mn, Fe, Co, and Ni are incorporated into SnO2. The crystal field splittings are compared to resonant inelastic X-ray scattering (RIXS) experiments, which measure precisely these elementary dd excitations. The origin of spectral features can be determined and identified via this comparison, leading to an increased understanding of how such dopant metals situate themselves in, and modify the host's electronic and magnetic properties; and also how each element differs when incorporated into other semiconducting materials. We found that oxygen vacancy formation must not occur at nearest neighbour sites to metal atoms, but instead must reside at least two coordination spheres beyond. The coordination of the dopants within the host can then be explicitly related to the d-electron configurations and energies. This approach facilitates an understanding of the essential link between local crystal coordination and electronic/magnetic properties.

X-ray spectroscopic study of amorphous and polycrystalline PbO films, α-PbO, and ß-PbO for direct conversion imaging.

We investigated the electronic structure of Lead Oxide (PbO) - one of the most promising photoconductor materials for direct conversion x-ray imaging detectors, using soft x-ray emission and absorption spectroscopy. Two structural configurations of thin PbO layers, namely the polycrystalline and the amorphous phase, were studied, and compared to the properties of powdered α-PbO and ß-PbO samples. In addition, we performed calculations within the framework of density functional theory and found an excellent agreement between the calculated and the measured absorption and emission spectra, which indicates high accuracy of our structural models. Our work provides strong evidence that the electronic structure of PbO layers, specifically the width of the band gap and the presence of additional interband and intraband states in both conduction and valence band, depend on the deposition conditions. We tested several model structures using DFT simulations to understand what the origin of these states is. The presence of O vacancies is the most plausible explanation for these additional electronic states. Several other plausible models were ruled out including interstitial O, dislocated O and the presence of significant lattice stress in PbO.

Bulk vs. Surface Structure of 3d Metal Impurities in Topological Insulator Bi2Te3.

Topological insulators have become one of the most prominent research topics in materials science in recent years. Specifically, Bi2Te3 is one of the most promising for technological applications due to its conductive surface states and insulating bulk properties. Herein, we contrast the bulk and surface structural environments of dopant ions Cr, Mn, Fe, Co, Ni, and Cu in Bi2Te3 thin films in order to further elucidate this compound. Our measurements show the preferred oxidation state and surrounding crystal environment of each 3d-metal atomic species, and how they are incorporated into Bi2Te3. We show that in each case there is a unique interplay between structural environments, and that it is highly dependant on the dopant atom. Mn impurities in Bi2Te3 purely substitute into Bi sites in a 2+ oxidation state. Cr atoms seem only to reside on the surface and are effectively not able to be absorbed into the bulk. Whereas for Co and Ni, an array of substitutional, interstitial, and metallic configurations occur. Considering the relatively heavy Cu atoms, metallic clusters are highly favourable. The situation with Fe is even more complex, displaying a mix of oxidation states that differ greatly between the surface and bulk environments.

Transition from Reconstruction toward Thin Film on the (110) Surface of Strontium Titanate.

The surfaces of metal oxides often are reconstructed with a geometry and composition that is considerably different from a simple termination of the bulk. Such structures can also be viewed as ultrathin films, epitaxed on a substrate. Here, the reconstructions of the SrTiO3 (110) surface are studied combining scanning tunneling microscopy (STM), transmission electron diffraction, and X-ray absorption spectroscopy (XAS), and analyzed with density functional theory calculations. Whereas SrTiO3 (110) invariably terminates with an overlayer of titania, with increasing density its structure switches from n × 1 to 2 × n. At the same time the coordination of the Ti atoms changes from a network of corner-sharing tetrahedra to a double layer of edge-shared octahedra with bridging units of octahedrally coordinated strontium. This transition from the n × 1 to 2 × n reconstructions is a transition from a pseudomorphically stabilized tetrahedral network toward an octahedral titania thin film with stress-relief from octahedral strontia units at the surface.

Adjacent Fe-Vacancy Interactions as the Origin of Room Temperature Ferromagnetism in (In(1-x)Fe(x))2O3.

Dilute magnetic semiconductors (DMSs) show great promise for applications in spin-based electronics, but in most cases continue to elude explanations of their magnetic behavior. Here, we combine quantitative x-ray spectroscopy and Anderson impurity model calculations to study ferromagnetic Fe-substituted In2O3 films, and we identify a subset of Fe atoms adjacent to oxygen vacancies in the crystal lattice which are responsible for the observed room temperature ferromagnetism. Using resonant inelastic x-ray scattering, we map out the near gap electronic structure and provide further support for this conclusion. Serving as a concrete verification of recent theoretical results and indirect experimental evidence, these results solidify the role of impurity-vacancy coupling in oxide-based DMSs.

Electronic structure and spin trapping in LiMnAs and LiFeAs:Mn.

The electronic structure of insulating antiferromagnetic LiMnAs is investigated using soft x-ray spectroscopy and compared to the electronic structure of metallic LiFeAs. Our calculations support the experimentally observed insulating antiferromagnetic order in LiMnAs. The x-ray absorption and resonant inelastic x-ray scattering spectra in LiFeAs and LiMnAs are adequately explained by the electronic structure alone, although it is possible that LiMnAs has significant electronic correlations driven by Hund's J coupling. Finally, we show evidence of a possible spin trap in Li(Fe0.95Mn0.05)As.

Measuring partial fluorescence yield using filtered detectors.

Typically, X-ray absorption near-edge structure measurements aim to probe the linear attenuation coefficient. These measurements are often carried out using partial fluorescence yield techniques that rely on detectors having photon energy discrimination improving the sensitivity and the signal-to-background ratio of the measured spectra. However, measuring the partial fluorescence yield in the soft X-ray regime with reasonable efficiency requires solid-state detectors, which have limitations due to the inherent dead-time while measuring. Alternatively, many of the available detectors that are not energy dispersive do not suffer from photon count rate limitations. A filter placed in front of one of these detectors will make the energy-dependent efficiency non-linear, thereby changing the responsivity of the detector. It is shown that using an array of filtered X-ray detectors is a viable method for measuring soft X-ray partial fluorescence yield spectra without dead-time. The feasibility of this technique is further demonstrated using α-Fe2O3 as an example and it is shown that this detector technology could vastly improve the photon collection efficiency at synchrotrons and that these detectors will allow experiments to be completed with a much lower photon flux reducing X-ray-induced damage.

Electronic structure of spinel-type nitride compounds Si3N4, Ge3N4, and Sn3N4 with tunable band gaps: application to light emitting diodes.

In this Letter using experimental and theoretical methods, we show that the solid solutions of group 14 nitrides having spinel structure (γ-M3N4 where M=Si, Ge, Sn) exhibit mainly direct electronic band gaps with values that span the entire visible wavelength region, making these hard and thermally stable materials suitable for optoelectronic devices and, in particular, lighting applications. Using the simulated band structure, we also calculate the exciton binding energy. The combination of large exciton binding energies and the tunable electronic band gaps in the visible range makes these binary spinel nitrides and their solid solutions a new class of multifunctional materials with optoelectronic properties that can be engineered to suit the desired application.

Effect of 3d doping on the electronic structure of BaFe2As2.

The electronic structure of BaFe(2)As(2) doped with Co, Ni and Cu has been studied by a variety of experimental and theoretical methods, but a clear picture of the dopant 3d states has not yet emerged. Herein we provide experimental evidence of the distribution of Co, Ni and Cu 3d states in the valence band. We conclude that the Co and Ni 3d states provide additional free carriers to the Fermi level, while the Cu 3d states are found at the bottom of the valence band in a localized 3d(10) shell. These findings help shed light on why superconductivity can occur in BaFe(2)As(2) doped with Co and Ni but not Cu.

Structural ordering in a silica glass matrix under Mn ion implantation.

Mn(+)-implanted, amorphous SiO(2) samples were synthesized using pulsed-ion implantation without thermal annealing. The crystal and electronic structures have been studied using x-ray diffraction and synchrotron-based soft x-ray absorption and emission spectroscopy at the Si and Mn L(2,3) edges. We find a combination of small MnO clusters and Si crystallites at shallow depths while tetrahedral Mn coordination is found deeper in the host target. Through a combination of techniques, we find that the implantation process simultaneously decreases the long-range order in the near-surface region and increases order deeper in the SiO(2) host. Our results suggest Mn substitution into Si sites at deep levels catalyzes the formation of α-quartz, providing insight into the complex interactions that determine the local structure around the impurities as well as the overall changes to the crystallinity of implanted SiO(2).

The electronic structure of lithium metagallate.

Herein we present a study of the electronic structure of lithium metagallate (LiGaO(2)), a material of interest in the field of optoelectronics. We use soft x-ray spectroscopy to probe the electronic structure of both the valence and conduction bands and compare our measurements to ab initio density functional theory calculations. We use several different exchange-correlation functionals, but find that no single theoretical approach used herein accurately quantifies both the band gap and the Ga 3d(10) states in LiGaO(2). We derive a band gap of 5.6 eV, and characterize electron hybridization in both the valence and conduction bands. Our study of the x-ray spectra may prove useful in analysing spectra from more complicated LiGaO(2) heterostructures.

Comparative theoretical and experimental study of the radiation-induced decomposition of glycine.

The radiation-induced decomposition of glycine is studied using a combination of near-edge X-ray absorption fine structure (NEXAFS) measurements and DFT calculations. The measured spectra show strong dose- or time-dependent effects consistent with a complex, multistep decomposition. Principal component analysis was used to determine the number of distinct molecules that were needed to explain the observed changes in the measured spectra, and the emerging absorption features are assigned to various product molecules through comparison with simulated spectra of several model compounds. It is clear from the experiment that the major effect of soft X-ray irradiation is the fragmentation of the molecule, primarily at the carbonyl sites. Peptide formation is shown to occur under irradiation; a condensation reaction initiated by the removal of a carbonyl oxygen is the proposed mechanism. This study utilizes a novel approach to the study of radiation damage that can occur during measurements and suggests that it may be possible to use simulated model spectra to correct for these effects in measured spectra.

Structural models of FeSe(x).

Two different structural models for non-stoichiometric FeSe(x) are examined and compared with soft x-ray spectroscopy findings for FeSe(x) (x = 0.85, 0.50). A structural model of tetragonal FeSe with excess interstitial Fe gives better agreement with experiment than a structural model of tetragonal FeSe with Se vacancies. This interstitial Fe increases the number of 3d states at the Fermi level. We find evidence that large non-stoichiometric ratios of Fe:Se, such as that of FeSe(0.50), yield clusters of pure Fe in the crystal structure.

Identifying valence structure in LiFeAs and NaFeAs with core-level spectroscopy.

Resonant x-ray emission spectroscopy (XES) measurements at Fe L(2,3) edges and electronic structure calculations for LiFeAs and NaFeAs are presented. Experiment and theory show that in the vicinity of the Fermi energy, the density of states is dominated by contributions from Fe 3d states. The comparison of Fe L(2,3) XES with spectra of related FeAs compounds reveals similar trends in energy and the ratio of intensities of the L(2) and L(3) peaks (I(L(2))/I(L(3)) ratio). The I(L(2))/I(L(3)) ratio for all FeAs-based superconductors is found to be closer to that of metallic Fe than that of the strongly correlated FeO. We conclude that iron-based superconductors are weakly or, at most, moderately correlated systems.

Co and Al co-doping for ferromagnetism in ZnO:Co diluted magnetic semiconductors.

Co and Al co-doped ZnO diluted magnetic semiconductors are fabricated by a pulsed laser deposition and their electronic structure is investigated using x-ray absorption and emission spectroscopy. The Zn(0.895)Co(0.100)Al(0.005)O thin films grown under oxygen-rich conditions exhibit ferromagnetic behavior without any indication of Co clustering. The Co L-edge and O K-edge x-ray absorption and emission spectra suggest that most of the Co dopants occupy the substitutional sites and the oxygen vacancies are not responsible for free charge carriers. The spectroscopic results and first principles calculations reveal that the ferromagnetism in Co and Al co-doped ZnO semiconductors mainly arises from Al interstitial defects and their hybridization with Co substitutional dopants.

Substituent effects in the iron 2p and carbon 1s edge near-edge X-ray absorption fine structure (NEXAFS) spectroscopy of ferrocene compounds.

The iron 2p and carbon 1s near-edge X-ray absorption fine structure (NEXAFS) spectra of substituted ferrocene compounds (Fe(Cp-(CH3)5)2, Fe(Cp)(Cp-COOH), Fe(Cp-COOH)2, and Fe(Cp-COCH3)2) are reported and are interpreted with the aid of extended Hückel molecular orbital (EHMO) theory and density functional theory (DFT). Significant substituent effects are observed in both the Fe 2p and C 1s NEXAFS spectra. These effects can be related to the electron donating/withdrawing properties of the cyclopentadienyl ligands and their substituents as well as the presence of pi* conjugation between the cyclopentadienyl ligand and unsaturated substituents.

Probing interfacial characteristics of rubrene/pentacene and pentacene/rubrene bilayers with soft X-ray spectroscopy.

The electronic structure of rubrene/pentacene and pentacene/rubrene bilayers has been investigated using soft X-ray absorption spectroscopy, resonant X-ray emission spectroscopy, and density-functional theory calculations. X-ray absorption and emission measurements reveal that it has been possible to alter the lowest unoccupied and the highest occupied molecular orbital states of rubrene in rubrene/pentacene bilayer. In the reverse case, one gets p* molecular orbital states originating from the pentacene layer. Resonant X-ray emission spectra suggest a reduction in the hole-transition probabilities for the pentacene/rubrene bilayer in comparison to reference pentacene layer. For the rubrenepentacene structure, the hole-transition probability shows an increase in comparison to the rubrene reference. We also determined the energy level alignment of the pentacene-rubrene interface by using X-ray and ultraviolet photoelectron spectroscopy. From these comparisons, it is found that the electronic structure of the pentacene-rubrene interface has a strong dependence on interface characteristics which depends on the order of the layers used.

Electronic structure of NPB and BCP molecules probed by x-ray emission spectroscopy.

Soft x-ray absorption and emission spectroscopies have been employed to investigate the electronic structure and chemical bonding of two prototypical molecules, N,N(')-bis-(1-naphthyl)-N,N(')-diphenyl-1,1(')-biphenyl-4,4(')-diamine (NPB) and bathocuproine (BCP), which are frequently chosen because of their hole-transporting and hole-blocking properties, respectively. The resulting resonant C Kalpha x-ray emission spectra of these materials reveal different spectral features depending on the resonant excitation energy. According to the N absorption and emission spectra, the contribution of N atoms to the highest occupied and lowest unoccupied molecular orbitals is different for in NPB and in BCP. Detailed knowledge of these materials will allow tailoring charge transport properties of organic devices in order to develop high performance organic light-emitting diodes and photovoltaic cells.

Post-annealing effect on the electronic structure of Mn atoms in Ga(1-x)Mn(x)As probed by resonant inelastic x-ray scattering.

The electronic structure of as-grown and post-annealed Ga(1-x)Mn(x)As epilayers (x≈0.055) has been investigated using resonant inelastic x-ray scattering. Mn L2,3 x-ray emission spectra show that the integral intensity ratio of Mn L2 to L3 emission lines increases with annealing temperature and comes close to that of manganese oxide. The oxygen K-emission/absorption spectra of post-annealed Ga0.945Mn0.055As show 1.5-3.0 times higher degree of oxidation on the film surface than that of the as-grown sample. These experimental findings are attributed to the diffusion of Mn impurity atoms from interstitial positions in the GaAs host lattice to the surface where they are passivated by oxygen.