RESUMEN
Extreme ultraviolet (EUV) lithography uses reflective optics and a thick mask absorber, leading to mask 3D (M3D) effects. These M3D effects cause disparities in the amplitudes and phases of EUV mask diffractions, impacting mask imaging performance and reducing process yields. Our findings demonstrate that wrinkles in the EUV pellicle can exacerbate M3D effects. This imbalance results in critical dimension variation, image contrast loss, and pattern shift in mask images. Therefore, the use of a pellicle material with thermodynamic characteristics that minimize wrinkles when exposed to EUV rays is imperative.
RESUMEN
Extreme ultraviolet (EUV) pellicles must have an EUV reflectance (EUVR) below 0.04% to prevent the reduction of critical dimension (CD). However, pellicle wrinkles cause localized CD variation by locally amplifying the EUVR. This study demonstrates that wrinkles can increase the pellicle's EUVR by approximately four times, and the CD drop depends on the relative position of the reflected light from the wrinkle to the 0th- or 1st-order diffracted light. The CD decreases by 6 nm. Therefore, even if the pellicle satisfies the requirement for the EUVR, we need to tightly control the generation of wrinkles to suppress CD variation during the entire exposure process.