Intrinsically Stretchable Floating Gate Memory Transistors for Data Storage of Electronic Skin Devices.

To propel electronic skin (e-skin) to the next level by integrating artificial intelligence features with advanced sensory capabilities, it is imperative to develop stretchable memory device technology. A stretchable memory device for e-skin must offer, in particular, long-term data storage while ensuring the security of personal information under any type of deformation. However, despite the significance of these needs, technology related to stretchable memory devices remains in its infancy. Here, we report an intrinsically stretchable floating gate (FG) polymer memory transistor. The device features a dual-stimuli (optical and electrical) writing system to prevent easy erasure of recorded data. An FG comprising an intermixture of Ag nanoparticles and elastomer and with proper energy-band alignment between the semiconductor and dielectric facilitated sustainable memory performance, while achieving a high memory on/off ratio (>105) and a long retention time (106 s) with the ability to withstand 50% uniaxial or 30% biaxial strain. In addition, our memory transistor exhibited high mechanical durability over multiple stretching cycles (1000 times), along with excellent environmental stability with respect to factors such as temperature, moisture, air, and delamination. Finally, we fabricated a 7 × 7 active-matrix memory transistor array for personalized storage of e-skin data and successfully demonstrated its functionality.

Autonomous self-healing supramolecular polymer transistors for skin electronics.

Skin-like field-effect transistors are key elements of bio-integrated devices for future user-interactive electronic-skin applications. Despite recent rapid developments in skin-like stretchable transistors, imparting self-healing ability while maintaining necessary electrical performance to these transistors remains a challenge. Herein, we describe a stretchable polymer transistor capable of autonomous self-healing. The active material consists of a blend of an electrically insulating supramolecular polymer with either semiconducting polymers or vapor-deposited metal nanoclusters. A key feature is to employ the same supramolecular self-healing polymer matrix for all active layers, i.e., conductor/semiconductor/dielectric layers, in the skin-like transistor. This provides adhesion and intimate contact between layers, which facilitates effective charge injection and transport under strain after self-healing. Finally, we fabricate skin-like self-healing circuits, including NAND and NOR gates and inverters, both of which are critical components of arithmetic logic units. This work greatly advances practical self-healing skin electronics.

Intrinsically stretchable three primary light-emitting films enabled by elastomer blend for polymer light-emitting diodes.

Intrinsically stretchable light-emitting materials are crucial for skin-like wearable displays; however, their color range has been limited to green-like yellow lights owing to the restricted stretchable light-emitting materials (super yellow series materials). To develop skin-like full-color displays, three intrinsically stretchable primary light-emitting materials [red, green, and blue (RGB)] are essential. In this study, we report three highly stretchable primary light-emitting films made from a polymer blend of conventional RGB light-emitting polymers and a nonpolar elastomer. The blend films consist of multidimensional nanodomains of light-emitting polymers that are interconnected in an elastomer matrix for efficient light-emitting under strain. The RGB blend films exhibited over 1000 cd/m2 luminance with low turn-on voltage (<5 Von) and the selectively stretched blend films on rigid substrate maintained stable light-emitting performance up to 100% strain even after 1000 multiple stretching cycles.

Mechanically robust stretchable semiconductor metallization for skin-inspired organic transistors.

Despite recent remarkable advances in stretchable organic thin-film field-effect transistors (OTFTs), the development of stretchable metallization remains a challenge. Here, we report a highly stretchable and robust metallization on an elastomeric semiconductor film based on metal-elastic semiconductor intermixing. We found that vaporized silver (Ag) atom with higher diffusivity than other noble metals (Au and Cu) forms a continuous intermixing layer during thermal evaporation, enabling highly stretchable metallization. The Ag metallization maintains a high conductivity (>104 S/cm) even under 100% strain and successfully preserves its conductivity without delamination even after 10,000 stretching cycles at 100% strain and several adhesive tape tests. Moreover, a native silver oxide layer formed on the intermixed Ag clusters facilitates efficient hole injection into the elastomeric semiconductor, which transcends previously reported stretchable source and drain electrodes for OTFTs.