RESUMEN
We show that circularly polarized light is a versatile way to manipulate both the orbital Hall effect and band topology in two-dimensional ferromagnets. Employing the hexagonal lattice, we proposed that interactions between light and matter allow for the modulation of the valley polarization effect, and then band inversions, accompanied by the band gap closing and reopening processes, can be achieved subsequently at two valleys. Remarkably, the distribution of orbital angular momentum can be controlled by the band inversions, leading to the Floquet engineering of the orbital Hall effect, as well as the topological phase transition from a second-order topological insulator to a Chern insulator with in-plane magnetization, and then to a normal insulator. Furthermore, first-principles calculations validate the feasibility with the 2H-ScI2 monolayer as a candidate material, paving a technological avenue to bridge the orbitronics and nontrivial topology using Floquet engineering.
RESUMEN
Magnetic materials offer a fertile playground for fundamental physics discovery, with not only electronic but also magnonic topological states intensively explored. However, one natural material with both electronic and magnonic nontrivial topologies is still unknown. Here, we demonstrate the coexistence of first-order topological magnon insulators (TMIs) and electronic second-order topological insulators (SOTIs) in 2D honeycomb ferromagnets, giving rise to the nontrivial corner states being connected by the charge-free magnonic edge states. We show that, with C3 symmetry, the phase factor ± Ï caused by the next nearest-neighbor Dzyaloshinskii-Moriya interaction breaks the pseudo-spin time-reversal symmetry T, which leads to the split of magnon bands, i.e., the emergence of TMIs with a nonzero Chern number of C=-1, in experimentally feasible candidates of MoI3, CrSiTe3, and CrGeTe3 monolayers. Moreover, protected by the C3 symmetry, the electronic SOTIs characterized by nontrivial corner states are obtained, bridging the topological aspect of fermions and bosons with a high possibility of innovative applications in spintronics devices.
RESUMEN
Recent advances in the manipulation of the orbital angular momentum (OAM) within the paradigm of orbitronics presents a promising avenue for the design of future electronic devices. In this context, the recently observed orbital Hall effect (OHE) occupies a special place. Here, focusing on both the second-order topological and quantum anomalous Hall insulators in two-dimensional ferromagnets, we demonstrate that topological phase transitions present an efficient and straightforward way to engineer the OHE, where the OAM distribution can be controlled by the nature of the band inversion. Using first-principles calculations, we identify Janus RuBrCl and three septuple layers of MnBi2Te4 as experimentally feasible examples of the proposed mechanism of OHE engineering by topology. With our work, we open up new possibilities for innovative applications in topological spintronics and orbitronics.
RESUMEN
The structural diversity and controllability in two-dimensional (2D) materials offers an intriguing platform for exploring a wide range of topological phenomena. The layer degree of freedom, as a novel technique for material manipulation, requires further investigation regarding its association with topological states. Here, using first-principles calculations and a tight-binding model, we propose a novel mechanism that couples the second-order topological corner states with the layer degree of freedom. By analyzing the edge states, topological indices, and spectra of nanoflakes, we identify ferromagnetic H'-Co2XF2 (X = C, N) as 2D second-order topological insulators with intrinsic ferroelectricity. Moreover, the topological corner states strongly couple with the layer degree of freedom, and, remarkably, ferroelectricity provides a nonvolatile handle to manipulate the layer-polarized corner states. These findings open an avenue for the manipulation of second-order topological states and establish a bridge between ferroelectricity and nontrivial topology.
RESUMEN
We put forward that stacked Chern insulators with opposite chiralities offer a strategy to achieve gapless helical edge states in two dimensions. We employ the square lattice as an example and elucidate that the gapless chiral and helical edge states emerge in the monolayer and antiferromagnetically stacked bilayer, characterized by Chern number C=-1 and spin Chern number CS=-1, respectively. Particularly, for a topological phase transition to the normal insulator in the stacked bilayer, a band gap closing and reopening procedure takes place accompanied by helical edge states disappearing, where the Chern insulating phase in the monolayer vanishes at the same time. Moreover, EuO is revealed as a suitable candidate for material realization. This work is not only valuable to the research of the quantum anomalous Hall effect but also offers a favorable platform to realize magnetic topologically insulating materials for spintronics applications.
RESUMEN
Weyl semimetals (WSMs) have attracted great attentions that provide intriguing platforms for exploring fundamental physical phenomena and future topotronics applications. Despite the fact that numerous WSMs are achieved, WSMs with long-distance distribution of Weyl points (WPs) in given material candidates remain elusive. Here, the emergence of intrinsic ferromagnetic WSMs in BaCrSe2 with the nontrivial nature explicitly confirmed by the Chern number and Fermi arc surface states analysis is theoretically demonstrated. Remarkably, unlike previous WSMs for which opposite chirality WPs are located very close to each other, the WPs of BaCrSe2 host a long-distance distribution, as much as half of the reciprocal space vector, suggesting that the WPs are highly robust and difficult to be annihilated by perturbations. The presented results not only advance the general understanding of magnetic WSMs but also put forward potential applications in topotronics.
RESUMEN
The understanding and manipulate of the second-order corner states are central to both fundamental physics and future topotronics applications. Despite the fact that numerous second-order topological insulators (SOTIs) are achieved, the efficient engineering in a given material remains elusive. Here, the emergence of 2D multiferroics SOTIs in SbAs and BP5 monolayers is theoretically demonstrated, and an efficient and straightforward way for engineering the nontrivial corner states by ferroelasticity and ferroelectricity is remarkably proposed. With ferroelectric polarization of SbAs and BP5 monolayers, the nontrivial corner states emerge in the mirror symmetric corners and are perpendicular to orientations of the in-plane spontaneous polarization. And remarkably the spatial distribution of the corner states can be effectively tuned by a ferroelastic switching. At the intermediate states of both ferroelectric and ferroelastic switchings, the corner states disappear. These finding not only combines exotic SOTIs with multiferroics but also pave the way for experimental discovery of 2D tunable SOTIs.
RESUMEN
Magnetic topological states have attracted great attention that provide exciting platforms for exploring prominent physical phenomena and applications of topological spintronics. Here, using a tight-binding model and first-principles calculations, we put forward that, in contrast to previously reported magnetic second-order topological insulators (SOTIs), robust SOTIs can emerge in two-dimensional ferromagnets regardless of magnetization directions. Remarkably, we identify intrinsic ferromagnetic 2H-RuCl2 and Janus VSSe monolayers as experimentally feasible candidates of predicted robust SOTIs with the emergence of nontrivial corner states along different magnetization directions. Moreover, under out-of-plane magnetization, we unexpectedly point out that the valley polarization of SOTIs can be huge and much larger than that of the known ferrovalley materials, opening up a technological avenue to bridge the valleytronics and higher-order topology with high possibility of innovative applications in topological spintronics and valleytronics.
RESUMEN
The interplay between band topology and magnetism plays a central role in achieving exotic physical phenomena and innovative spintronics applications. While prior works have mainly focused on ferromagnetic matter, little is known about the manipulation of band topology in antiferromagnets. Here, we report the emergence of a two-dimensional (2D) antiferromagnetic topological insulator (AFM TIs) by proximity coupling a 2D TI and a normal AFM insulator, and remarkably realize it in a concrete example of the KCuSe/NaMnBi heterobilayer. The first-principles calculations show that a band gap as large as 63.8 meV can be opened up by spin-orbit coupling, revealing the possible application even at room temperature. The size of the band gap depends on the separation between KCuSe and NaMnBi QLs, which can be switched experimentally by applying external strain. Moreover, the heterobilayer presents an integer topological invariant with a value of Z2 = 1 and a pair of gapless edge states. The findings not only broaden the range of 2D AFM topological quantum materials, but could also inspire more research in van der Waals heterobilayers for topological spintronics.
RESUMEN
Boundary obstructed topological phases caused by Wannier orbital shift between ordinary atomic sites are proposed, which, however, cannot be indicated by symmetry eigenvalues at high symmetry momenta (symmetry indicators) in bulk. On the open boundary, Wannier charge centers can shift to different atoms from those in bulk, leading to in-gap surface states, higher-order hinge states or corner states. To demonstrate such orbital shift-induced boundary obstructed topological insulators, eight material candidates are predicted, all of which are overlooked in the present topological databases. Metallic surface states, hinge states, or corner states cover the large bulk energy gap (e.g., more than 1 eV in TlGaTe2 ) at related boundary, which are ready for experimental detection. Additionally, these materials are also fragile topological insulators with hourglass-like surface states.
RESUMEN
Magnetic topological states open up exciting opportunities for exploring fundamental topological quantum physics and innovative design of topological spintronics devices. However, the nontrivial topologies, for most known magnetic topological states, are usually associated with and may be heavily deformed by fragile magnetism. Here, using a tight-binding model and first-principles calculations, we demonstrate that a highly robust magnetic topological insulator phase, which remains intact under both ferromagnetic and antiferromagnetic configurations, can emerge in two-dimensional EuCd2Bi2 quintuple layers. Because of spin-orbital coupling, an inverted gap with intrinsic band inversions occuring simultaneously for up and down spin channels is obtained, accompanied by a nonzero spin Chern number and a pair of gapless edge states, and remarkably the magnitude of the nontrivial band gap for EuCd2Bi2 reaches as much as 750 meV. Moreover, the robustness of the magnetic TI phase is further confirmed by rotating the magnetization directions, indicating that EuCd2Bi2 represents a promising material for understanding and utilizing the topological insulating states in two-dimensional spin-orbit magnets.
RESUMEN
The recent demonstration of topological states in antiferromagnets (AFMs) provides an exciting platform for exploring prominent physical phenomena and applications of antiferromagnetic spintronics. A famous example is the AFM topological insulator (TI) state, which, however, was still not observed in two dimensions. Using a tight-binding model and first-principles calculations, we show that, in contrast to previously observed AFM topological insulators in three dimensions, an AFM TI can emerge in two dimensions as a result of a nonsymmorphic symmetry that combines the twofold rotation symmetry and half-lattice translation. Based on the spin Chern number, Wannier charge centers, and gapless edge states analysis, we identify intrinsic AFM XMnY (X=Sr and Ba, Y=Sn and Pb) quintuple layers as experimentally feasible examples of predicted topological states with a stable crystal structure and giant magnitude of the nontrivial band gaps, reaching as much as 186 meV for SrMnPb, thereby promoting these systems as promising candidates for innovative spintronics applications.
RESUMEN
The concepts of Weyl fermions and topological semimetals emerging in three-dimensional momentum space are extensively explored owing to the vast variety of exotic properties that they give rise to. On the other hand, very little is known about semimetallic states emerging in two-dimensional magnetic materials, which present the foundation for both present and future information technology. Here, we demonstrate that including the magnetization direction into the topological analysis allows for a natural classification of topological semimetallic states that manifest in two-dimensional ferromagnets as a result of the interplay between spin-orbit and exchange interactions. We explore the emergence and stability of such mixed topological semimetals in realistic materials, and point out the perspectives of mixed topological states for current-induced orbital magnetism and current-induced domain wall motion. Our findings pave the way to understanding, engineering and utilizing topological semimetallic states in two-dimensional spin-orbit ferromagnets.
RESUMEN
Reliable and energy-efficient magnetization switching by electrically induced spin-orbit torques is of crucial technological relevance for spintronic devices implementing memory and logic functionality. Here we predict that the strength of spin-orbit torques and the Dzyaloshinskii-Moriya interaction in topologically nontrivial magnetic insulators can exceed by far that of conventional metals. In analogy to the quantum anomalous Hall effect, we explain this extraordinary response in the absence of longitudinal currents as hallmark of monopoles in the electronic structure of systems that are interpreted most naturally within the framework of mixed Weyl semimetals. We thereby launch the effect of spin-orbit torque into the field of topology and reveal its crucial role in mediating the topological phase transitions arising from the complex interplay between magnetization direction and momentum-space topology. The presented concepts may be exploited to understand and utilize magnetoelectric coupling phenomena in insulating ferromagnets and antiferromagnets.
RESUMEN
New three-dimensional (3D) topological phases can emerge in superlattices containing constituents of known two-dimensional topologies. Here we demonstrate that stoichiometric Bi1Te1, which is a natural superlattice of alternating two Bi2Te3 quintuple layers and one Bi bilayer, is a dual 3D topological insulator where a weak topological insulator phase and topological crystalline insulator phase appear simultaneously. By density functional theory, we find indices (0;001) and a non-zero mirror Chern number. We have synthesized Bi1Te1 by molecular beam epitaxy and found evidence for its topological crystalline and weak topological character by spin- and angle-resolved photoemission spectroscopy. The dual topology opens the possibility to gap the differently protected metallic surface states on different surfaces independently by breaking the respective symmetries, for example, by magnetic field on one surface and by strain on another surface.
RESUMEN
In the present work, we demonstrate that both GaBi3 and InBi3 monolayers are Quantum Spin Hall insulators. Here, the electronic band structures and edge states of the two novel monolayers are systematically investigated by first principle calculation. Our analysis of the band inversion and Z2 number demonstrate that both GaBi3 and InBi3 are promising 2D TIs with large gaps of 283meV and 247meV, respectively. Taking GaBi3 as example, it is illustrated that the edge states are impacted by SOC and finite size effect. In addition, it is found that the compression and tension totally affect differently on the edge states. Finally, the electron velocity is studied in detail, which is highly important in the manufacturing of spintronics device.
RESUMEN
Monilinia isolates were collected from major apple and pear production regions in China from 2004 to 2011 and identified based on their morphological characteristics and three highly conserved loci. The 247 isolates belonged to three species: Monilinia fructicola, Monilia yunnanensis, and Monilia polystroma. M. yunnanensis was the most prevalent (77%), followed by M. polystroma (20%) and Monilinia fructicola (3%). Monilia yunnanensis is primarily distributed in the south, north, and west of China; M. polystroma is limited to the north and east; and Monilinia fructicola was detected only from a few samples from the north and east. Phylogenetic analysis based on internal transcribed spacer, ß-tubulin, and laccase (lcc2) genes suggested that Monilia yunnanensis, M. polystroma, and Monilinia fructigena are closely related, and Monilia yunnanensis is more distantly related. We also found that these three species do not show consistent differences in morphological characteristics, including colony morphology, colony expansion rate, conidial characteristics, and the amount of stroma produced in culture. Thus, these three species are more like phylogenetic species in the process of speciation. In addition, a set of species-specific primers based on single-nucleotide polymorphisms and deletions in the lcc2 gene region were designed and a conventional polymerase chain reaction method successfully developed for differentiating Monilinia fructicola, Monilia yunnanensis, M. polystroma, and Monilinia laxa from the other species.
RESUMEN
In-plane transition-metal dichalcogenides (TMDs) quantum wells have been studied on the basis of first-principles density functional calculations to reveal how to control the electronic structures and the properties. In collection of quantum confinement, strain and intrinsic electric field, TMD quantum wells offer a diverse of exciting new physics. The band gap can be continuously reduced ascribed to the potential drop over the embedded TMD and the strain substantially affects the band gap nature. The true type-II alignment forms due to the coherent lattice and strong interface coupling suggesting the effective separation and collection of excitons. Interestingly, two-dimensional quantum wells of in-plane TMD can enrich the photoluminescence properties of TMD materials. The intrinsic electric polarization enhances the spin-orbital coupling and demonstrates the possibility to achieve topological insulator state and valleytronics in TMD quantum wells. In-plane TMD quantum wells have opened up new possibilities of applications in next-generation devices at nanoscale.
RESUMEN
The properties that distinguish topological crystalline insulator (TCI) and topological insulator (TI) rely on crystalline symmetry and time-reversal symmetry, respectively, which encodes different bulk and surface/edge properties. Here, we predict theoretically that electron-doped TlM (M = S and Se) (110) monolayers realize a family of two-dimensional (2D) TCIs characterized by mirror Chern number CM = -2. Remarkably, under uniaxial strain (≈ 1%), a topological phase transition between 2D TCI and 2D TI is revealed with the calculated spin Chern number CS = -1 for the 2D TI. Using spin-resolved edge states analysis, we show different edge-state behaviors, especially at the time reversal invariant points. Finally, a TlBiSe2/NaCl quantum well is proposed to realize an undoped 2D TCI with inverted gap as large as 0.37 eV, indicating the high possibility for room-temperature observation.
RESUMEN
The bulk-insulating topological insulators with tunable surface states are necessary for applications in spintronics and quantum computation. Here we present theoretical evidence for modulating the topological surface states and achieving the insulating bulk states in solid-solution (Bi(1-x)Sb(x))(2)Te(3). Our results reveal that the band inversion occurs in (Bi(1-x)Sb(x))(2)Te(3), indicating the non-triviality across the entire composition range, and the Dirac point moves upwards till it lies within the bulk energy gap accompanying the increase of Sb concentration x. In addition, with increasing x, the formation of prominent native defects becomes much more difficult, resulting in the truly insulating bulk. The solid-solution system is a promising way of tuning the properties of topological insulators and designing novel topologically insulating devices.