RESUMEN
We report the observation of a new type of helicity-dependent photocurrent induced by an in-plane transverse direct electric current in an InAs quantum well. The amplitude of the photocurrent depends linearly on the transverse current. Moreover, the observed incident azimuth-angle dependence of this photocurrent is different from that induced by the circular photogalvanic effect. This new photocurrent appears as a result of an asymmetrical carrier distribution in both the conduction and valence bands induced by the transverse current. The photoexcited carrier density created by interband transition processes is thus modulated and leads to the observed new azimuth-angle dependence. The observed efficient generation of the helicity-dependent photocurrent offers an effective approach to manipulate electron spins in two-dimensional semiconductor systems with the added advantage of electrical control of the spin-related photocurrent in spintronic applications.
RESUMEN
We investigated the first and second-order correlations of the light scattered near-resonantly by a quantum dot under excitation by a frequency comb, i.e., a periodically pulsed laser source. In contrast to its monochromatic counterpart, the pulsed resonance fluorescence spectrum features a superposition of sidebands distributed around a central peak with maximal sideband intensity near the Rabi frequency. Distinguishing between the coherently and incoherently scattered light reveals pulse-area dependent Rabi oscillations evolving with different phase for each component. Our observations, which can be reproduced theoretically, may impact schemes for remote entanglement based on pulsed two-photon interference.
RESUMEN
We developed a new approach to test the single-photon emissions of semiconductor quantum dots (QDs) in the optical communication band. A diamond-anvil cell pressure device was used for blue-shifting the 1.3 µm emissions of InAs/GaAs QDs to 0.9 µm for detection by silicon avalanche photodiodes. The obtained g((2))(0) values from the second-order autocorrelation function measurements of several QD emissions at 6.58 GPa were less than 0.3, indicating that this approach provides a convenient and efficient method of characterizing 1.3 µm single-photon source based on semiconductor materials.
RESUMEN
We report the measurement of field-field and photon-photon correlations of light scattered by two InAs quantum dots separated by ≈40 µm. Near 4 K a large fraction of photons can be scattered coherently by each quantum dot leading to one-photon interference at a beam splitter (visibility ≈20%). Simultaneously, two-photon interference is also observed (visibility ≈40%) due to the indistinguishability of photons scattered by the two different quantum emitters. We show how spectral diffusion accounts for the reduction in interference visibility through variations in photon flux.
RESUMEN
In this paper, combining low deposition rate with proper growth temperature, we have developed a way to prepare very low-density quantum dots (QDs) suited for the study of single QD properties without resorting to submicron lithography. Experiment results demonstrate that InAs desorption is significant during growing the low density QDs. Ripening of InAs QDs is clearly observed during the post-growth annealing. Photoluminescence spectroscopy reveals that the emission wavelength of low density InAs QDs arrives at 1332.4 nm with a GaAs capping layer.
RESUMEN
In this work, InAs quantum dots (QDs) grown on a linear graded InGaAs metamorphic buffer layer by molecular beam epitaxy have been investigated. The growth of the metamorphic buffer layers was carefully optimized, yielding a smooth surface with a minimum root mean square of roughness of less than 0.98 nm as measured by atomic force microscopy (AFM). InAs QDs were then grown on the buffer layers, and their emission wavelength at room-temperature is 1.49 microm as measured by photoluminescence (PL). The effects of post-growth rapid thermal annealing (RTA) on the optical properties of the InAs QDs were investigated. After the RTA, the PL peak of the QDs was blue-shifted and the full width at half maximum decreased.