Blue sensitive sub-band gap negative photoconductance in SnO2/TiO2 NP bilayer oxide transistor.

Large negative photoconductance (NPC) of SnO2/TiO2 nanoparticles (NPs) heterostructure has been observed with thin film transistor (TFT) geometry and has been investigated using sub-bandgap light (blue) illumination. This negative photoconduction has been detected both in accumulation and depletion mode operation, which effectively reduces the carrier mobility (µ) of the TFT. Moreover, the threshold voltage (Vth) widely shifted in the positive direction under illumination. The combined effects of the reduction of mobility and Vth shifting led to a faster reduction of On (or Off) state current under illumination. The negative photosensitivity of this system is as high as 3.2 A W-1, which has been rarely reported in the earlier literature. Moreover, the variation of On (or Off) current, µ and Vth shift is linear with low-intensity blue light. This SnO2/TiO2 NP bilayer channel has been deposited on top of an ionic dielectric (Li-Al2O3) that reduces its operating voltage of this TFT within 2 V. Furthermore, the device has achieved a saturation mobility of 0.4 cm2 V-1 s-1 with an on/off ratio of 7.4 × 103 in the dark. An energy band diagram model has been proposed based on the type-II heterostructure formation between SnO2/TiO2 semiconductors to explain this NPC mechanism. According to the energy band diagram model, adsorbed H2O molecules of TiO2 NPs created a depleted layer in the heterostructure that accelerated the recombination process of photo-generated carriers rather than its transport.

Coexistence of Electrochromism and Bipolar Nonvolatile Memory in a Single Viologen.

Viologens are fascinating redox-active organic compounds that have been widely explored in electrochromic devices (ECDs). However, the combination of electrochromic and resistive random-access memory in a single viologen remains unexplored. We report the coexistence of bistate electrochromic and single-resistor (1R) memory functions in a novel viologen. A high-performance electrochromic function is achieved by combining viologen (BzV2+2PF6) with polythiophene (P3HT), enabling a "push-pull" electronic effect due to the efficient intermolecular charge transfer in response to an applied bias. The ECDs show high coloration efficiency (ca. 1150 ± 10 cm2 C-1), subsecond switching time, good cycle stability (>103 switching cycles), and low-bias operation (±1.5 V). The ECDs require low power for switching the color states (55 µW cm-2 for magenta and 141 µW cm-2 for blue color). The random-access memory devices (p+2-Si/BzV2+2PF6/Al) exhibit distinct low and high resistive states with an ON/OFF ratio of ∼103, bipolar and nonvolatile characteristics that manifest good performances, and "Write"-"Read"-"Erase" (WRE) functions. The charge conduction mechanism of the RRAM device is elucidated by the Poole-Frenkel model where SET and RESET states arise at a low transition voltage (VT = ±1.7 V). Device statistics and performance parameters for both electrochromic and memory devices are compared with the literature data. Our findings on electrochromism and nonvolatile memory originated in the same viologen could boost the development of multifunctional, smart, wearable, flexible, and low-cost optoelectronic devices.