Design of integrated silicon waveguides for Raman-enhanced four-wave mixing in the telecom band.

Silicon planar waveguides are designed to maximize the wavelength conversion efficiency via the use of Raman-enhanced four-wave mixing in the telecom band. By investigating the dispersion properties of various rib waveguide structures, the optimum etch depth and width are selected to obtain efficient phase-matching for a continuous-wave pump at 1545 nm. The design benefits from good fabrication tolerance in the structural parameters, which are well within the precision of standard lithography and etching processes. Using the optimized waveguides, simulations show that it is possible to reach conversion efficiencies as high as ∼45 dB for waveguide lengths as short as 4.6 cm, with a pump power of only 130 mW. This enhancement in the conversion efficiency is about 50 dB higher than conventional values for FWM in integrated silicon photonic systems, highlighting the benefits of exploiting the coupling between the two nonlinear processes.

Raman amplification at 2.2 µm in silicon core fibers with prospects for extended mid-infrared source generation.

Raman scattering provides a convenient mechanism to generate or amplify light at wavelengths where gain is not otherwise available. When combined with recent advancements in high-power fiber lasers that operate at wavelengths ~2 µm, great opportunities exist for Raman systems that extend operation further into the mid-infrared regime for applications such as gas sensing, spectroscopy, and biomedical analyses. Here, a thulium-doped fiber laser is used to demonstrate Raman emission and amplification from a highly nonlinear silicon core fiber (SCF) platform at wavelengths beyond 2 µm. The SCF has been tapered to obtain a micrometer-sized core diameter (~1.6 µm) over a length of 6 cm, with losses as low as 0.2 dB cm-1. A maximum on-off peak gain of 30.4 dB was obtained using 10 W of peak pump power at 1.99 µm, with simulations indicating that the gain could be increased to up to ~50 dB by extending the SCF length. Simulations also show that by exploiting the large Raman gain and extended mid-infrared transparency of the SCF, cascaded Raman processes could yield tunable systems with practical output powers across the 2-5 µm range.

Low-temperature polycrystalline silicon waveguides for low loss transmission in the near-to-mid-infrared region.

Low-temperature deposited polycrystalline silicon waveguides are emerging as a flexible platform that allows for dense optoelectronic integration. Here, the optical transmission properties of poly-silicon waveguides have been characterized from the near-to-mid-infrared wavelength regime, extending the optical transmission well beyond previous reports in the telecom band. The poly-Si waveguides with a dimension of 3 µm × âˆ¼0.6 µm have been produced from pre-patterned amorphous silicon waveguides that are post-processed through laser melting, reflowing, and crystallization using a highly localized laser induced heat treatment at a wavelength of 532 nm. Low optical transmission losses (<3 dB cm-1) have been observed at 1.55 µm as well as across the wavelength range of 2-2.25 µm, aided by the relatively large waveguide heights that are enabled by the deposition process. The results demonstrate the suitability of low-temperature poly-silicon waveguides to find wide ranging applications within integrated mid-infrared systems.

All-fibre heterogeneously-integrated frequency comb generation using silicon core fibre.

Originally developed for metrology, optical frequency combs are becoming increasingly pervasive in a wider range of research topics including optical communications, spectroscopy, and radio or microwave signal processing. However, application demands in these fields can be more challenging as they require compact sources with a high tolerance to temperature variations that are capable of delivering flat comb spectra, high power per tone, narrow linewidth and high optical signal-to-noise ratio. This work reports the generation of a flat, high power frequency comb in the telecom band using a 17 mm fully-integrated silicon core fibre as a parametric mixer. Our all-fibre, cavity-free source combines the material benefits of planar waveguide structures with the advantageous properties of fibre platforms to achieve a 30 nm bandwidth comb source containing 143 tones with <3 kHz linewidth, 12 dB flatness, and >30 dB OSNR over the entire spectral region.

Raman enhanced four-wave mixing in silicon core fibers.

A strong Raman enhancement to the four-wave mixing (FWM) conversion efficiency is obtained in a silicon core fiber (SCF) when pumped with a continuous-wave (CW) source in the telecom band. By tapering the SCFs to alter the core diameter and length, the role of phase-matching on the conversion enhancement is investigated, with a maximum Raman enhancement of ∼15 dB obtained for an SCF with a zero dispersion wavelength close to the pump. Simulations show that by optimizing the tapered waist diameter to overlap the FWM phase-matching with the peak Raman gain, it is possible to obtain large Raman enhanced FWM conversion efficiencies of up to ∼2 dB using modest CW pump powers over wavelengths covering the extended telecom bands.

Ge Ion Implanted Photonic Devices and Annealing for Emerging Applications.

Germanium (Ge) ion implantation into silicon waveguides will induce lattice defects in the silicon, which can eventually change the crystal silicon into amorphous silicon and increase the refractive index from 3.48 to 3.96. A subsequent annealing process, either by using an external laser or integrated thermal heaters can partially or completely remove those lattice defects and gradually change the amorphous silicon back into the crystalline form and, therefore, reduce the material's refractive index. Utilising this change in optical properties, we successfully demonstrated various erasable photonic devices. Those devices can be used to implement a flexible and commercially viable wafer-scale testing method for a silicon photonics fabrication line, which is a key technology to reduce the cost and increase the yield in production. In addition, Ge ion implantation and annealing are also demonstrated to enable post-fabrication trimming of ring resonators and Mach-Zehnder interferometers and to implement nonvolatile programmable photonic circuits.

Nonlinear properties of laser-processed polycrystalline silicon waveguides for integrated photonics.

We report nonlinear optical characterization of cm-long polycrystalline silicon (poly-Si) waveguides at telecom wavelengths. Laser post-processing of lithographically-patterned amorphous silicon deposited on silica-on-silicon substrates provides low-loss poly-Si waveguides with surface-tension-shaped boundaries. Achieving optical losses as low as 4 dB cm-1 enabled us to demonstrate effects of self-phase modulation (SPM) and two-photon absorption (TPA). Analysis of the spectral broadening and nonlinear losses with numerical modeling reveals the best fit values of the Kerr coefficient n2=4.5×10-18 m W-1 and TPA coefficient ßTPA=9.0×10-12 m2 W-1, which are within the range reported for crystalline silicon. On-chip low-loss poly-Si paves the way for flexible integration of nonlinear components in multi-layered photonic systems.

Silicon erasable waveguides and directional couplers by germanium ion implantation for configurable photonic circuits.

A novel technique for realization of configurable/one-time programmable (OTP) silicon photonic circuits is presented. Once the proposed photonic circuit is programmed, its signal routing is retained without the need for additional power consumption. This technology can potentially enable a multi-purpose design of photonic chips for a range of different applications and performance requirements, as it can be programmed for each specific application after chip fabrication. Therefore, the production costs per chip can be reduced because of the increase in production volume, and rapid prototyping of new photonic circuits is enabled. Essential building blocks for the configurable circuits in the form of erasable directional couplers (DCs) were designed and fabricated, using ion implanted waveguides. We demonstrate permanent switching of optical signals between the drop port and through the port of the DCs using a localized post-fabrication laser annealing process. Proof-of-principle demonstrators in the form of generic 1×4 and 2×2 programmable switching circuits were fabricated and subsequently programmed.

Laser-Driven Phase Segregation and Tailoring of Compositionally Graded Microstructures in Si-Ge Nanoscale Thin Films.

The ability to manipulate the composition of semiconductor alloys on demand and at nanometer-scale resolutions is a powerful tool that could be exploited to tune key properties such as the electronic band gap, mobility, and refractive index. However, existing methods to modify the composition involve altering the stoichiometry by temporal or spatial modulation of the process parameters during material growth, limiting the scalability and flexibility for device fabrication. Here, we report a laser processing method for localized tailoring of the composition in amorphous silicon-germanium (a-SiGe) nanoscale thin films on silicon substrates, postdeposition, by controlling phase segregation through the scan speed of the laser-induced molten zone. Laser-driven phase segregation at speeds adjustable from 0.1 to 100 mm s-1 allows access to previously unexplored solidification dynamics. The steady-state spatial distribution of the alloy constituents can be tuned directly by setting the laser scan speed constant to achieve indefinitely long Si1-xGex microstructures, exhibiting the full range of compositions (0 < x < 1). To illustrate the potential, we demonstrate a photodetection application by exploiting the laser-written polycrystalline SiGe microstripes, showing tunability of the optical absorption edge over a wavelength range of 200 nm. Our method can be applied to pseudobinary alloys of ternary semiconductors, metals, ceramics, and organic crystals, which have phase diagrams similar to those of SiGe alloys. This study opens a route for direct laser writing of novel devices made of alloy microstructures with tunable composition profiles, including graded-index waveguides and metasurfaces, multispectral photodetectors, full-spectrum solar cells, and lateral heterostructures.

Low-loss silicon core fibre platform for mid-infrared nonlinear photonics.

Broadband mid-infrared light sources are highly desired for wide-ranging applications that span free-space communications to spectroscopy. In recent years, silicon has attracted great interest as a platform for nonlinear optical wavelength conversion in this region, owing to its low losses (linear and nonlinear) and high stability. However, most research in this area has made use of small core waveguides fabricated from silicon-on-insulator platforms, which suffer from high absorption losses of the use of silica cladding, limiting their ability to generate light beyond 3 µm. Here, we design and demonstrate a compact silicon core, silica-clad waveguide platform that has low losses across the entire silicon transparency window. The waveguides are fabricated from a silicon core fibre that is tapered to engineer mode properties to ensure efficient nonlinear propagation in the core with minimal interaction of the mid-infrared light with the cladding. These waveguides exhibit many of the benefits of fibre platforms, such as a high coupling efficiency and power handling capability, allowing for the generation of mid-infrared supercontinuum spectra with high brightness and coherence spanning almost two octaves (1.6-5.3 µm).

Laser crystallized low-loss polycrystalline silicon waveguides.

We report the fabrication of low-loss, low temperature deposited polysilicon waveguides via laser crystallization. The process involves pre-patterning amorphous silicon films to confine the thermal energy during the crystallization phase, which helps to control the grain growth and reduce the heat transfer to the surrounding media, making it compatible with CMOS integration. Micro-Raman spectroscopy, Secco etching and X-ray diffraction measurements reveal the high crystalline quality of the processed waveguides with the formation of millimeter long crystal grains. Optical losses as low as 5.3 dB/cm have been measured, indicating their suitability for the development of high-density integrated circuits.

Optical-resonance-enhanced nonlinearities in a MoS2-coated single-mode fiber.

Few-layer molybdenum disulfide (MoS2) has an electronic band structure that is dependent on the number of layers and, therefore, is a very promising material for an array of optoelectronic, photonic, and lasing applications. In this Letter, we make use of a side-polished optical fiber platform to gain access to the nonlinear optical properties of the MoS2 material. We show that the nonlinear response can be significantly enhanced via resonant coupling to the thin film material, allowing for the observation of optical modulation and spectral broadening in the telecom band. This route to access the nonlinear properties of two-dimensional materials promises to yield new insights into their photonic properties.

Tapered silicon core fibers with nano-spikes for optical coupling via spliced silica fibers.

Reported here is the fabrication of tapered silicon core fibers possessing a nano-spike input that facilitates their seamless splicing to conventional single mode fibers. A proof-of-concept 30 µm cladding diameter fiber-based device is demonstrated with nano-spike coupling and propagation losses below 4 dB and 2 dB/cm, respectively. Finite-element-method-based simulations show that the nano-spike coupling losses could be reduced to below 1 dB by decreasing the cladding diameters down to 10 µm. Such efficient and robust integration of the silicon core fibers with standard fiber devices will help to overcome significant barriers for all-fiber nonlinear photonics and optoelectronics.

Tapered polysilicon core fibers for nonlinear photonics: erratum.

We correct an error of the nonlinear refractive index used in our original paper.

Programmable long-period grating in a liquid core optical fiber.

A programmable fiber long-period grating (LPG) is experimentally demonstrated in a liquid core optical fiber with a low insertion loss. The LPG is dynamically formed by a temperature gradient in real time through a micro-heater array. The transmission spectrum of the LPG can be completely reconfigured by digitally changing the grating period, index contrast, length, and design. The phase shift inside the LPG can also be readily defined to enable advanced spectrum shaping. Owing to the high thermo-optic coefficient of the liquid core, it is possible to achieve high coupling efficiencies with driving powers as low as a few tens of milliwatts. The proposed thermo-programmable device provides a potential design solution for dynamic all-fiber optics components.

Laser recrystallization and inscription of compositional microstructures in crystalline SiGe-core fibres.

Glass fibres with silicon cores have emerged as a versatile platform for all-optical processing, sensing and microscale optoelectronic devices. Using SiGe in the core extends the accessible wavelength range and potential optical functionality because the bandgap and optical properties can be tuned by changing the composition. However, silicon and germanium segregate unevenly during non-equilibrium solidification, presenting new fabrication challenges, and requiring detailed studies of the alloy crystallization dynamics in the fibre geometry. We report the fabrication of SiGe-core optical fibres, and the use of CO2 laser irradiation to heat the glass cladding and recrystallize the core, improving optical transmission. We observe the ramifications of the classic models of solidification at the microscale, and demonstrate suppression of constitutional undercooling at high solidification velocities. Tailoring the recrystallization conditions allows formation of long single crystals with uniform composition, as well as fabrication of compositional microstructures, such as gratings, within the fibre core.

Tapered polysilicon core fibers for nonlinear photonics.

We propose and demonstrate a novel approach to obtaining small-core polysilicon waveguides from the silicon fiber platform. The fibers were fabricated via a conventional drawing tower method and, subsequently, tapered down to achieve silicon core diameters of ∼1 µm, the smallest optical cores for this class of fiber to date. Characterization of the material properties have shown that the taper process helps to improve the local crystallinity of the silicon core, resulting in a significant reduction in the material loss. By exploiting the combination of small cores and low losses, these tapered fibers have enabled the first observation of nonlinear transmission within a polycrystalline silicon waveguide of any type. As the fiber drawing method is highly scalable, it opens a route for the development of low-cost and flexible nonlinear silicon photonic systems.

Enhanced all-optical modulation in a graphene-coated fibre with low insertion loss.

Graphene is a highly versatile two-dimensional material platform that offers exceptional optical and electrical properties. Of these, its dynamic conductivity and low effective carrier mass are of particular interest for optoelectronic applications as they underpin the material's broadband nonlinear optical absorption and ultra-fast carrier mobility, respectively. In this paper, we utilize these phenomena to demonstrate a high-speed, in-fibre optical modulator developed on a side-polished optical fibre platform. An especially low insertion loss (<1 dB) was achieved by polishing the fibre to a near atomically smooth surface (<1 nm RMS), which minimized scattering and ensured excellent contact between the graphene film and the fibre. In order to enhance the light-matter interaction, the graphene film is coated with a high index polyvinyl butyral layer, which has the added advantage of acting as a barrier to the surrounding environment. Using this innovative approach, we have fabricated a robust and stable all-fibre device with an extinction ratio as high as 9 dB and operation bandwidth of 0.5 THz. These results represent a key step towards the integration of low-dimensional materials within standard telecoms networks.

Two-photon absorption and all-optical modulation in germanium-on-silicon waveguides for the mid-infrared.

The nonlinear absorption properties of a germanium-on-silicon waveguide have been characterized across the two-photon absorption (TPA) transmission window. The results show that the TPA parameters in germanium waveguides are much stronger than the peak values in silicon, in good agreement with selected measurements conducted in bulk materials. Exploiting the large nonlinear absorption near the bandedge, efficient all-optical modulation is achieved with a modulation depth of ∼8 dB and a response time <5 ps.