RESUMEN
Exploring emerging two-dimensional (2D) van der Waals (vdW) semiconducting materials and precisely tuning their electronic properties at the atomic level have long been recognized as crucial issues for developing their high-end electronic and optoelectronic applications. As a III-VI semiconductor, ultrathin layered hexagonal GaTe (h-GaTe) remains unexplored in terms of its intrinsic electronic properties and band engineering strategies. Herein, we report the successful synthesis of ultrathin h-GaTe layers on a selected graphene/SiC(0001) substrate, via molecular beam epitaxy (MBE). The widely tunable quasiparticle band gaps (â¼2.60-1.55 eV), as well as the vdW quantum well states (QWSs) that can be strictly counted by the layer numbers, are well characterized by onsite scanning tunneling microscopy/spectroscopy (STM/STS), and their origins are clearly addressed by density functional theory (DFT) calculations. More intriguingly, distinctive 8|8E and 4|4P (Ga) mirror twin boundaries (MTBs) are identified in the ultrathin h-GaTe flakes, which can induce decreased band gaps and prominent p-doping effects. This work should deepen our understanding on the electronic tunability of 2D III-VI semiconductors by thickness control and line defect engineering, which may hold promise for fabricating atomic-scale vertical and lateral homojunctions toward ultrascaled electronics and optoelectronics.
RESUMEN
Kagome materials have recently garnered substantial attention due to the intrinsic flat band feature and the stimulated magnetic and spin-related many-body physics. In contrast to their bulk counterparts, two-dimensional (2D) kagome materials feature more distinct kagome bands, beneficial for exploring novel quantum phenomena. Herein, we report the direct synthesis of an ultrathin kagome-structured Co-telluride (Co9Te16) via a molecular beam epitaxy (MBE) route and clarify its formation mechanism from the Co-intercalation in the 1T-CoTe2 layers. More significantly, we unveil the flat band states in the ultrathin Co9Te16 and identify the real-space localization of the flat band states by in situ scanning tunneling microscopy/spectroscopy (STM/STS) combined with first-principles calculations. A ferrimagnetic order is also predicted in kagome-Co9Te16. This work should provide a novel route for the direct synthesis of ultrathin kagome materials via a metal self-intercalation route, which should shed light on the exploration of the intriguing flat band physics in the related systems.
RESUMEN
Ultrathin PtSe2 ribbons can host spin-polarized edge states and distinct edge electrocatalytic activity, emerging as a promising candidate for versatile applications in various fields. However, the direct synthesis is still challenging and the growth mechanism is still unclear. Herein, the arrayed growth of ultrathin PtSe2 ribbons on bunched vicinal Au(001) facets, via a facile chemical vapor deposition (CVD) route is reported. The ultrathin PtSe2 flakes can transform from traditional irregular shapes to desired ribbon shapes by increasing the height of bunched and unidirectionally oriented Au steps (with step height hstep) is found. This crossover, occurring at hstep ≈ 3.0 nm, defines the tailored growth from step-flow to single-terrace-confined modes, as validated by density functional theory calculations of the different system energies. On the millimeter-scale single-crystal Au(001) films with aligned steps, the arrayed ultrathin PtSe2 ribbons with tunable width of ≈20-1000 nm, which are then served as prototype electrocatalysts for hydrogen evolution reaction (HER) is achieved. This work should represent a huge leap in the direct synthesis and the mechanism exploration of arrayed ultrathin transition-metal dichalcogenides (TMDCs) ribbons, which should stimulate further explorations of the edge-related physical properties and practical applications.
RESUMEN
Enhanced second-harmonic generation (SHG) responses are reported in monolayer transition metal dichalcogenides (e.g., MX2 , M: Mo, W; X: S, Se) due to the broken symmetries. The 3R-like stacked MX2 spiral structures possessing the similar broken inversion symmetry should present dramatically enhanced SHG responses, thus providing great flexibility in designing miniaturized on-chip nonlinear optical devices. To achieve this, the first direct synthesis of twisted 3R-stacked chiral molybdenum diselenide (MoSe2 ) spiral structures with specific screw dislocations (SD) arms is reported, via designing a water-assisted chemical vapor transport (CVT) approach. The study also clarifies the formation mechanism of the MoSe2 spiral structures, by precisely regulating the precursor supply accompanying with multiscale characterizations. Significantly, an up to three orders of magnitude enhancement of the SHG responses in twisted 3R stacked MoSe2 spirals is demonstrated, which is proposed to arise from the synergistic effects of broken inversion symmetry, strong light-matter interaction, and band nesting effects. Briefly, the work provides an efficient synthetic route for achieving the 3R-stacked TMDCs spirals, which can serve as perfect platforms for promoting their applications in on-chip nonlinear optical devices.
RESUMEN
As an emerging member of monoelemental two-dimensional (2D) materials, 2D tellurium (tellurene) has recently attracted intensive attention due to its polymorphism arising from the multivalent nature and fascinating properties such as wide-range band gaps, high carrier mobilities, etc. Herein, we predict the formation of a rectangular-phase tellurene on Ni(111) by first-principles density functional theory (DFT) calculations and realize its direct syntheses and characterizations by molecular beam epitaxy (MBE) and scanning tunneling microscopy (STM). We reveal that the monolayer rectangular tellurene and underlying Ni(111) substrate are strongly coupled, along with good lattice registry along two mutually perpendicular directions, which serves as the key driving force for the tellurene formation. We also uncover the unique morphological transitions of Te/Ni(111) from rectangular tellurene monolayer, to uniform periodic striped patterns at the second layer, and then to thick striped patterns. This work should offer valuable insights for the substrate-mediated syntheses of monoelemental 2D materials, thus propelling their phase engineering and intriguing property explorations.
RESUMEN
Epitaxial growth of wafer-scale monolayer semiconducting transition metal dichalcogenide single crystals is essential for advancing their applications in next-generation transistors and highly integrated circuits. Several efforts have been made for the growth of monolayer MoS2 single crystals on high-symmetry Au(111) and sapphire substrates, while more prototype growth systems still need to be discovered for clarifying the internal mechanisms. Herein, we report the epitaxial growth of unidirectionally aligned monolayer MoS2 domains and single-crystal films on low-symmetry Au(101) vicinal facets via a facile chemical vapor deposition method. On-site scanning tunneling microscopy observations reveal the formation of a specific rectangular Moiré pattern along the [101Ì ] step edge of Au(101) and along its perpendicular direction. The perfect lattice constant matching of MoS2/Au(101) along the substrate high-symmetry directions (i.e., Au[101Ì ], Au [010]) as well as the step-edge-guiding effect are proposed to facilitate the robust epitaxy. Multiscale characterizations further confirm the domain-boundary-free feature of the monolayer MoS2 films merged by unidirectionally aligned monolayer domains. This work hereby puts forward a symmetry mismatched epitaxial system for the direct synthesis of monolayer MoS2 single crystals, which should deepen our understanding about the epitaxy of 2D layered materials and propel their applications in various fields.
RESUMEN
Dark septate endophytes (DSE) colonize plant roots extensively and increase host plant growth and nutrition. However, the development of DSE-produced metabolites as plant biostimulants has been largely ignored. DSE growth curves and extracellular metabolite components were analyzed and the growth-promoting effects of DSE extracellular metabolites on alfalfa (Medicago sativa L.) grown for 4, 8 12, 16 and 20 days were evaluated. The growth curve of the DSE strain Alternaria sp. shows days 0-8 in the growth phase, days 8-16 in the stable phase, and days 16-20 in the senescent phase. The extracellular metabolite components of DSE were significantly different at different growth stages. The biomass of alfalfa was increased significantly by DSE extracellular metabolites (P < 0.05). Biomass of alfalfa inoculated with DSE extracellular metabolites more than doubled after growth for 8 days and nutrient availability also increased significantly compared with the uninoculated control. Six DSE extracellular metabolites, calycosin 7-galactoside, 1-[(5-amino-5-carboxypentyl)amino]-1-deoxyfructose, N2-fructopyranosylarginine, 2-(4-methyl-5-thiazolyl)ethyl hexanoate, kenposide B, and medinoside E, were significantly positively correlated with alfalfa biomass (P < 0.01). This study combines the DSE extracellular metabolites with plant and soil traits to provide a theoretical basis for the use of DSE metabolites in the product development of plant biostimulants.
Asunto(s)
Endófitos , Desarrollo de la Planta , Galactósidos/farmacología , Raíces de Plantas , Plantas , SueloRESUMEN
Self-intercalation of native metal atoms in two-dimensional (2D) transition metal dichalcogenides has received rapidly increasing interest, due to the generation of intriguing structures and exotic physical properties, however, only reported in limited materials systems. An emerging type-II Dirac semimetal, NiTe2, has inspired great attention at the 2D thickness region, but has been rarely achieved so far. Herein, we report the direct synthesis of mono- to few-layer Ni-tellurides including 1T-NiTe2 and Ni-rich stoichiometric phases on graphene/SiC(0001) substrates under ultra-high-vacuum conditions. Differing from previous chemical vapor deposition growth accompanied with transmission electron microscopy imaging, this work combines precisely tailored synthesis with on-site atomic-scale scanning tunneling microscopy observations, offering us visual information about the phase modulations of Ni-tellurides from 1T-phase NiTe2 to self-intercalated Ni3Te4 and Ni5Te6. The synthesis of Ni self-intercalated NixTey compounds is explained to be mediated by the high metal chemical potential under Ni-rich conditions, according to density functional theory calculations. More intriguingly, the emergence of superconductivity in bilayer NiTe2 intercalated with 50% Ni is also predicted, arising from the enhanced electron-phonon coupling strength after the self-intercalation. This work provides insight into the direct synthesis and stoichiometric phase modulation of 2D layered materials, enriching the family of self-intercalated materials and propelling their property explorations.
RESUMEN
Two-dimensional (2D) semiconductors, especially transition metal dichalcogenides (TMDs), have been envisioned as promising candidates in extending Moore's law. To achieve this, the controllable growth of wafer-scale TMDs single crystals or periodic single-crystal patterns are fundamental issues. Herein, we present a universal route for synthesizing arrays of unidirectionally orientated monolayer TMDs ribbons (e.g., MoS2, WS2, MoSe2, WSe2, MoSxSe2-x), by using the step edges of high-miller-index Au facets as templates. Density functional theory calculations regarding the growth kinetics of specific edges have been performed to reveal the morphological transition from triangular domains to patterned ribbons. More intriguingly, we find that, the uniformly aligned TMDs ribbons can merge into single-crystal films through a one-dimensional edge epitaxial growth mode. This work hereby puts forward an alternative pathway for the direct synthesis of inch-scale uniform monolayer TMDs single-crystals or patterned ribbons, which should promote their applications as channel materials in high-performance electronics or other fields.
RESUMEN
Moiré superlattices formed by the stacking of two-dimensional (2D) transition metal dichalcogenide lattices on substrate lattices have been reported to imply a crucial effect on the electronic properties of 2D materials (e.g., band gap, doping level) and their physical properties. Herein, we report the direct observation of various striped moiré superstructures for monolayer WSe2 on the Au(100) facet, due to the lattice symmetry difference and relative rotation. The periodicities or the inter-stripe distances for striped superstructures fall in a range of 0-15 nm or 0-3 nm after relatively low or high temperature annealing processes, respectively. The diverse striped moiré superstructures then served as perfect platforms for examining the electronic band gap tunability for monolayer WSe2/Au(100) by using scanning tunneling microscopy/spectroscopy (STM/STS), which increases from â¼1.59 eV to â¼1.90 eV with increasing moiré periods from â¼1.62 to â¼11.58 nm. The coupling strength of monolayer WSe2/Au(100) with various striped patterns is thus proposed to be modulated by the different relative orientations. This work should hereby provide some fundamental references for the domain orientation control, interface coupling strength, and application explorations of two-dimensional layered materials in future electronics and optoelectronics.
RESUMEN
Improving the adhesion property of graphene directly grown on an insulating substrate is essential for promoting the reliability and durability of the related applications. However, effective approaches have rarely been reported, especially for vertically oriented graphene (VG) films grown on insulating templates. To tackle this, we have developed a facile synthetic strategy by introducing an ultrathin (10 nm-thick) titanium (Ti) film on a quartz glass substrate as the adhesion layer, for plasma-enhanced chemical vapor deposition (PECVD) growth of VG films. This synthetic process induces the formation of Ti, oxygen (O), carbon (C)-containing adhesion layer (Ti (O, C)), offering improved interfacial adhesion due to the formation of chemical bonds among Ti and C atoms. Dramatically improved surface and interface stabilities have been achieved, with regard to its counterpart without a Ti adhesion layer. Moreover, we have also realized precise controls of the transparent/conductive property, surface roughness, and hydrophobicity, etc., by varying the VG film growth time. We have also demonstrated the very intriguing application potentials of the hybrids in light-dimming related fields, that is, electro-heating defogging lenses and neutral density filters toward medical endoscope defogging and camera photography.