Efficient antimicrobial applications of two novel supramolecular metallogels derived from a l(+)-tartaric acid low molecular weight gelator.

Novel metallogels were synthesized using l(+)-tartaric acid as a gelator, along with cadmium(ii)-acetate and mercury(ii)-acetate in N,N-dimethyl formamide at room temperature. Rheological analyses confirmed the mechanical stability of Cd(ii)- and Hg(ii)-metallogels under varying conditions. Characterization through EDX mapping and FESEM imaging provided insights into their chemical constituents and microstructural features. FT-IR spectroscopy elucidated the metallogel formation mechanism. Antimicrobial assays revealed significant activity against various bacteria, including Gram-positive and Gram-negative strains. This study presents a comprehensive exploration of Cd(ii) and Hg(ii)-based l(+)-tartaric acid-mediated metallogels, highlighting their potential in combating bacterial infections. These findings suggest promising applications in both industrial and biomedical fields, offering avenues for the development of advanced materials.

Machine Learning-Assisted Exploration of Intrinsically Spin-Ordered Two-Dimensional (2D) Nanomagnets.

The existence of spontaneous spin-ordering in two-dimensional (2D) nanomagnets holds significant importance due to their several unique and promising properties that distinguish them from conventional 2D materials. In recent times, machine learning (ML) has emerged as a powerful tool for effectively exploring and identifying the optimal 2D materials for specific applications or properties within a limited span of time. Here, we have introduced ML-accelerated approaches to specifically estimate the properties, such as the HSE bandgap and magnetoanisotropic energy (MAE) of 2D magnetic materials. Supervised ML algorithms were employed to derive the descriptors that are capable of predicting the properties of intrinsic 2D magnetic materials. Furthermore, the feature selection score is also calculated to reduce the feature space complexity and improve the model accuracy. The input features were obtained from the C2DB database, and models were constructed using linear regression, Lasso, decision tree, random forest, XG Boost, and support vector machine algorithms. The random forest model predicted the HSE band gaps with an unprecedented low root-mean-square error (RMSE) of 0.22 eV, while the linear regression gives the best fit with RMSEs of 0.25 and 0.22 meV for the MAE(x) and MAE(y), respectively. Therefore, the integration of interpretable analytical models with density functional theory offers a swift and reliable approach for uncovering the properties of intrinsic 2D magnetic materials. This collaborative methodology not only ensures speed in analysis but also enriches the material space.

Development of a novel self-healing Zn(II)-metallohydrogel with wide bandgap semiconducting properties for non-volatile memory device application.

A rapid and effective strategy has been devised for the swift development of a Zn(II)-ion-based supramolecular metallohydrogel, termed Zn@PEH, using pentaethylenehexamine as a low molecular weight gelator. This process occurs in an aqueous medium at room temperature and atmospheric pressure. The mechanical strength of the synthesized Zn@PEH metallohydrogel has been assessed through rheological analysis, considering angular frequency and oscillator stress dependencies. Notably, the Zn@PEH metallohydrogel exhibits exceptional self-healing abilities and can bear substantial loads, which have been characterized through thixotropic analysis. Additionally, this metallohydrogel displays injectable properties. The structural arrangement resembling pebbles within the hierarchical network of the supramolecular Zn@PEH metallohydrogel has been explored using FESEM and TEM measurements. EDX elemental mapping has confirmed the primary chemical constituents of the metallohydrogel. The formation mechanism of the metallohydrogel has been analyzed via FT-IR spectroscopy. Furthermore, zinc(II) metallohydrogel (Zn@PEH)-based Schottky diode structure has been fabricated in a lateral metal-semiconductor-metal configuration and  it's charge transport behavior has also been studied. Notably, the zinc(II) metallohydrogel-based resistive random access memory (RRAM) device (Zn@PEH) demonstrates bipolar resistive switching behavior at room temperature. This RRAM device showcases remarkable switching endurance over 1000 consecutive cycles and a high ON/OFF ratio of approximately 270. Further, 2 × 2 crossbar array of the RRAM devices were designed to demonstrate OR and NOT logic circuit operations, which can be extended for performing higher order computing operations. These structures hold promise for applications in non-volatile memory design, neuromorphic and in-memory computing, flexible electronics, and optoelectronic devices due to their straightforward fabrication process, robust resistive switching behavior, and overall system stability.

Novel supramolecular luminescent metallogels containing Tb(iii) and Eu(iii) ions with benzene-1,3,5-tricarboxylic acid gelator: advancing semiconductor applications in microelectronic devices.

A novel strategy was employed to create supramolecular metallogels incorporating Tb(iii) and Eu(iii) ions using benzene-1,3,5-tricarboxylic acid (TA) as a gelator in N,N-dimethylformamide (DMF). Rheological analysis demonstrated their mechanical robustness under varying stress levels and angular frequencies. FESEM imaging revealed a flake-like hierarchical network for Tb-TA and a rod-shaped architecture for Eu-TA. EDX analysis confirmed essential chemical constituents within the metallogels. FT-IR, PXRD, Raman spectroscopy, and thermogravimetric analysis assessed their gelation process and material properties, showing semiconducting characteristics, validated by optical band-gap measurements. Metal-semiconductor junction-based devices integrating Al metal with Tb(iii)- and Eu(iii)-metallogels exhibited non-linear charge transport akin to a Schottky diode, indicating potential for advanced electronic device development. Direct utilization of benzene-1,3,5-tricarboxylic acid and Tb(iii)/Eu(iii) sources underscores their suitability as semiconducting materials for device fabrication. This study explores the versatile applications of Tb-TA and Eu-TA metallogels, offering insights for material science researchers.

CrXY (X/Y = S, Se, Te) monolayers as efficient anode materials for Li and Na-ion batteries: a first-principles study.

Over the last decade, two-dimensional (2D) materials have been of great interest in the energy storage field. Large-scale electrochemical energy storage is based on the intercalation of metal ions in layered materials having van der Waals gaps. In this work, by means of first-principles calculations, we explored the use of 2D Janus transition metal dichalcogenides (TMDs) CrSSe, CrSTe and CrSeTe as anode materials for lithium and sodium-ion batteries. To examine the electronic properties and electrochemical performance, density functional theory (DFT) calculation was used. Our research shows that lithium diffuses easily with short diffusion distances and prefers to bind effectively to the monolayer. These structures are metallic in their bare phases. The highest adsorption energy shown by CrSSe, CrSTe, and CrSeTe is -1.86 eV, -1.66 eV, -2.15 eV with a low diffusion barrier of 0.3 eV, 0.6 eV, and 0.1 eV for the Li atoms and 0.54 eV, 0.32 eV and 0.15 eV for the Na atoms, respectively. At different chemical stoichiometries, we discovered negligible average open-circuit voltages of 1.0 V, 0.52 V, 0.6 V for lithium and 0.1 V, 0.49 V, and 0.51 V for sodium atoms respectively. The storage capacities shown by CrSSe, CrSTe, and CrSeTe are 348 mA h g-1, 254 mA h g-1, 208 mA h g-1 for the Li atoms and 260 mA h g-1, 198 mA h g-1, 177 mA h g-1 for the Na atoms respectively.

Twistronics in two-dimensional transition metal dichalcogenide (TMD)-based van der Waals interface.

Transition metal dichalcogenides (TMD) based heterostructures have gained significant attention lately because of their distinct physical properties and potential uses in electronics and optoelectronics. In the present work, the effects of twist on the structural, electronic, and optical properties (such as the static dielectric constant, refractive index, extinction coefficient, and absorption coefficient) of vertically stacked TMD heterostructures, namely MoSe2/WSe2, WS2/WSe2, MoSe2/WS2 and MoS2/WSe2, have been systematically studied and a thorough comparison is done among these heterostructures. In addition, the absence of negative frequency in the phonon dispersion curve and a low formation energy confirm the structural and thermodynamical stability of all the proposed TMD heterostructures. The calculations are performed using first-principles-based density functional theory (DFT) method. Beautiful Moiré patterns are formed due to the relative rotation of the layers as a consequence of the superposition of the periodic structures of the TMDs on each other. Twist engineering allows the modulation of bandgaps and a phase change from direct to indirect band gap semiconductors as well. The high optical absorption in the visible range of spectrum makes these twisted heterostructures very promising candidates in photovoltaic applications.

Rapid Semiconducting Supramolecular Mg(II)-Metallohydrogel: Exploring Its Potential in Nonvolatile Resistive Switching Applications and Antiseptic Wound Healing Properties.

An effective strategy was employed for the rapid development of a supramolecular metallohydrogel of Mg(II) ion (i.e., Mg@PEHA) using pentaethylenehexamine (PEHA) as a low-molecular-weight gelator in aqueous medium under ambient conditions. The mechanical stability of the synthesized Mg@PEHA metallohydrogel was characterized by using rheological analysis, which showed its robustness across different angular frequencies and oscillator stress levels. The metallohydrogel exhibited excellent thixotropic behavior, which signifies that Mg@PEHA has a self-healing nature. Field emission scanning electron microscopy and transmission electron microscopy images were utilized to explore the rectangular pebble-like hierarchical network of the Mg@PEHA metallohydrogel. Elemental mapping through energy-dispersive X-ray spectroscopy analysis confirmed the presence of primary chemical constituents in the metallohydrogel. Fourier transform infrared spectroscopy spectroscopy provided insights into the possible formation strategy of the metallohydrogel. In this work, Schottky diode structures in a metal-semiconductor-metal geometry based on a magnesium(II) metallohydrogel (Mg@PEHA) were constructed, and the charge transport behavior was observed. Additionally, a resistive random access memory (RRAM) device was developed using Mg@PEHA, which displayed bipolar resistive switching behavior at room temperature. The researchers investigated the switching mechanism, which involved the formation or rupture of conduction filaments, to gain insights into the resistive switching process. The RRAM device demonstrated excellent performance with a high ON/OFF ratio of approximately 100 and remarkable endurance of over 5000 switching cycles. RRAM devices exhibit good endurance, meaning they can endure a large number of read and write cycles without significant degradation in performance. RRAM devices have shown promising reliability in terms of long-term performance and stability, making them suitable for critical applications that require reliable memory solutions. Significant inhibitory activity against the drug-resistant Klebsiella pneumonia strain and its biofilm formation ability was demonstrated by Mg@PEHA. The minimum inhibitory concentration value of the metallohydrogel was determined to be 3 mg/mL when it was dissolved in 1% DMSO. To study the antibiofilm activity, an MTT assay was performed, revealing that biofilm inhibition (60%) commenced at 1 mg/mL of Mg@PEHA when dissolved in 1% DMSO. Moreover, in the mouse excisional wound model, Mg@PEHA played a crucial role in preventing postoperative wound infections and promoting wound healing.

Exploration of a wide bandgap semiconducting supramolecular Mg(II)-metallohydrogel derived from an aliphatic amine: a robust resistive switching framework for brain-inspired computing.

A rapid metallohydrogelation strategy has been developed of magnesium(II)-ion using trimethylamine as a low molecular weight gelator in water medium at room temperature. The mechanical property of the synthesized metallohydrogel material is established through the rheological analysis. The nano-rose like morphological patterns of Mg(II)-metallohydrogel are characterized through field emission scanning electron microscopic study. The energy dispersive X-ray elemental mapping analysis confirms the primary gel forming elements of Mg(II)-metallohydrogel. The possible metallohydrogel formation strategy has been analyzed through FT-IR spectroscopic study. In this work, magnesium(II) metallohydrogel (Mg@TMA) based metal-semiconductor-metal structures have been developed and charge transport behaviour is studied. Here, it is confirmed that the magnesium(II) metallohydrogel (Mg@TMA) based resistive random access memory (RRAM) device is showing bipolar resistive switching behaviour at room temperature. We have also explored the mechanism of resistive switching behaviour using the formation (rupture) of conductive filaments between the metal electrodes. This RRAM devices exhibit excellent switching endurance over 10,000 switching cycles with a large ON/OFF ratio (~ 100). The easy fabrication techniques, robust resistive switching behaviour and stability of the present system makes these structures preferred candidate for applications in non-volatile memory design, neuromorphic computing, flexible electronics and optoelectronics etc.

A 5-aminoisophthalic acid low molecular weight gelator based novel semiconducting supramolecular Zn(ii)-metallogel: unlocking an efficient Schottky barrier diode for microelectronics.

A novel method has been successfully developed for creating supramolecular metallogels using zinc(ii) ions and 5-aminoisophthalic acid as the gelator (low molecular weight gelator) in a dimethylformamide (DMF) solvent at room temperature. Comprehensive rheological investigations confirm the robust mechanical strength of the resulting zinc(ii)-metallogel. Microstructural analysis conducted through field-emission scanning electron microscopy (FESEM) unveils a unique flake-like morphology, with energy-dispersive X-ray (EDX) elemental mapping confirming the prevalence of zinc as the primary constituent of the metallogel. To understand the formation mechanism of this metallogel, Fourier-transform infrared (FT-IR) spectroscopy was employed. Notably, these supramolecular zinc(ii)-metallogel assemblies exhibit electrical conductivity reminiscent of metal-semiconductor (MS) junction electronic components. Surprisingly, the metallogel-based thin film device showcases an impressive electrical conductivity of 1.34 × 10-5 S m-1. The semiconductor characteristics of the synthesized zinc(ii)-metallogel devices, including their Schottky barrier diode properties, have been extensively investigated. This multifaceted study opens up a promising avenue for designing functional materials tailored for electronic applications. It harnesses the synergistic properties of supramolecular metallogels and highlights their significant potential in the development of semiconductor devices. This work represents a novel approach to the creation of advanced materials with unique electronic properties, offering exciting prospects for future innovations in electronic and semiconductor technologies.

Two novel low molecular weight gelator-driven supramolecular metallogels efficient in antimicrobial activity applications.

A remarkable ultrasonication technique was successfully employed to create two novel metallogels using citric acid as a low molecular weight gelator, in combination with cadmium(ii)-acetate and mercury(ii)-acetate dissolved in N,N-dimethyl formamide at room temperature and under ambient conditions. The mechanical properties of the resulting Cd(ii)- and Hg(ii)-metallogels were rigorously examined through rheological analyses, which revealed their robust mechanical stability under varying angular frequencies and shear strains. Detailed characterization of the chemical constituents within these metallogels was accomplished through EDX mapping experiments, while microstructural features were visualized using field emission scanning electron microscope (FESEM) images. Additionally, FT-IR spectroscopic analysis was employed to elucidate the metallogel formation mechanism. Significantly, the antimicrobial efficacy of these novel metallogels was assessed against a panel of bacteria, including Gram-positive strains such as Bacillus subtilis and Staphylococcus epidermidis, as well as Gram-negative species like Escherichia coli and Pseudomonas aeruginosa. The results demonstrated substantial antibacterial activity, highlighting the potential of Cd(ii) and Hg(ii)-based citric acid-mediated metallogels as effective agents against a broad spectrum of bacteria. In conclusion, this study provides a comprehensive exploration of the synthesis, characterization, and antimicrobial properties of Cd(ii) and Hg(ii)-based citric acid-mediated metallogels, shedding light on their promising applications in combating both Gram-positive and Gram-negative bacterial infections. These findings open up exciting prospects for the development of advanced materials with multifaceted industrial and biomedical uses.

Resonant transport in a highly conducting single molecular junction via metal-metal covalent bond.

Achieving highly transmitting molecular junctions through resonant transport at low bias is key to the next-generation low-power molecular devices. Although resonant transport in molecular junctions was observed by connecting a molecule between the metal electrodes via chemical anchors by applying a high source-drain bias (>1 V), the conductance was limited to <0.1G0, G0 being the quantum of conductance. Herein, we report electronic transport measurements by directly connecting a ferrocene molecule between Au electrodes under ambient conditions in a mechanically controllable break junction setup (MCBJ), revealing a conductance peak at ∼0.2G0 in the conductance histogram. A similar experiment was repeated for ferrocene terminated with amine (-NH2) and cyano (-CN) anchors, where conductance histograms exhibit an extended low conductance feature, including the sharp high conductance peak, similar to pristine ferrocene. The statistical analysis of the data and density functional theory-based transport calculation suggest a possible molecular conformation with a strong hybridization between the Au electrodes, and that the Fe atom of ferrocene is responsible for a near-perfect transmission in the vicinity of the Fermi energy, leading to the resonant transport at a small applied bias (<0.5 V). Moreover, calculations including van der Waals/dispersion corrections reveal a covalent-like organometallic bonding between Au and the central Fe atom of ferrocene, having bond energies of ∼660 meV. Overall, our study not only demonstrates the realization of an air-stable highly transmitting molecular junction, but also provides important insights about the nature of chemical bonding at the metal/organo-metallic interface.

A Wide Bandgap Semiconducting Magnesium Hydrogel: Moisture Harvest, Iodine Sequestration, and Resistive Switching.

Water harvesting from the ubiquitous moisture is pivotal for delivering fresh water to earth's arid/semiarid regions, and sequestration of iodine from the solution is crucial for environmental safety due to its severe effect on human metabolic processes. In this context, herein, a multifunctional supramolecular metallohydrogel (Mg@TAEA) is synthesized through direct mixing of magnesium nitrate hexahydrate and the low molecular weight gelator tris(2-aminoethyl)amine. Electron microscopy reveals that Mg@TAEA is sculptured in vertically grown well-oriented micrometer-sized flakes. The porous crystalline material (52 m2/g) was found to be an efficacious host matrix for water harvesting from moisture (847 mg/g). Mg@TAEA shows effective (513 mg/g) iodine sequestration from solution and adsorption of carbon dioxide (15 mg/g). The wide bandgap semiconducting Mg@TAEA (3.6 eV) material is a potential candidate for building memory devices, and the Ion/Ioff ratio of the device based on the indium tin oxide (ITO)/Mg@TAEA/Ag heterostructure was found to be ∼62. We further extended our work by analyzing the charge transport properties of the system and found space charge limited conduction (SCLC) and trap-filled SCLC to be responsible for the nonlinear transport behavior observed in the device.

Quantum-coupled borophene-based heterolayers for excitonic and molecular sensing applications.

Borophene (B), with remarkably unique chemical binding in its crystallographic structural phases including anisotropic structures, theoretically has high Young's modulus and thermal conductivity. Moreover, it is metallic in nature, and has recently joined the family of two-dimensional (2D) materials and is poised to be employed in flexible hetero-layered devices and sensors in fast electronic gadgets and excitonic devices. Interfacial coupling helps individual atomic sheets synergistically work in tandem, and is very crucial in controllable functionality. Most of the microscopic and spectroscopic scans reveal surface information; however, information regarding interfacial coupling is difficult to obtain. Electronic signatures of dynamic inter-layer coupling in B/boron nitride (BN) and B/molybdenum disulfide (MoS2) have been detected in the form of distinct peaks in differential current signals obtained from scanning tunneling spectroscopy (STS) and conducting atomic force microscopy (CAFM). These unique sets of observed peaks represent interfacial coupling quantum states. The peaks in the electronic density of states (DOS) obtained via density functional theory (DFT) band structure calculations matched well with the electronic signatures of coupling quantum states. In our calculations, we found that the DOS peak evolves when the component layers are brought to compromised distances. While B/BN exhibits green sensitivity indicating mid-gap formation, B/MoS2 bestows red sensitivity indicating band-gap excitation of MoS2. Molecular detection of methylene blue (MB) based on surface-enhanced Raman spectroscopy (SERS) was carried out with borophene-based hetero-layered stacks as molecular anchoring platforms.