Ab Initio Study of Octane Moiety Adsorption on H- and Cl-Functionalized Silicon Nanowires.

Using first-principles calculations based on density functional theory, we investigated the effects of surface functionalization on the energetic and electronic properties of hydrogenated and chlorinated silicon nanowires oriented along the <112> direction. We show that the band structure is strongly influenced by the diameter of the nanowire, while substantial variations in the formation energy are observed by changing the passivation species. We modeled an octane moiety absorption on the (111) and (110) surface of the silicon nanowire to address the effects on the electronic structure of the chlorinated and hydrogenated systems. We found that the moiety does not substantially affect the electronic properties of the investigated systems. Indeed, the states localized on the molecules are embedded into the valence and conduction bands, with no generation of intragap energy levels and moderated change in the band gap. Therefore, Si-C bonds can enhance protection of the hydrogenated and chlorinated nanowire surfaces against oxidation without substantial modification of the electronic properties. However, we calculated a significant charge transfer from the silicon nanowires to the octane moiety.

Semiconductivity Transition in Silicon Nanowires by Hole Transport Layer.

The surface of nanowires is a source of interest mainly for electrical prospects. Thus, different surface chemical treatments were carried out to develop recipes to control the surface effect. In this work, we succeed in shifting and tuning the semiconductivity of a Si nanowire-based device from n- to p-type. This was accomplished by generating a hole transport layer at the surface by using an electrochemical reaction-based nonequilibrium position to enhance the impact of the surface charge transfer. This was completed by applying different annealing pulses at low temperature (below 400 °C) to reserve the hydrogen bonds at the surface. After each annealing pulse, the surface was characterized by XPS, Kelvin probe measurements, and conductivity measured by FET based on a single Si NW. The mechanism and conclusion were supported experimentally and theoretically. To this end, this strategy has been demonstrated as an essential tool which could pave a new road for regulating semiconductivity and for other low-dimensional nanomaterials.

The non-stationary case of the Maxwell-Garnett theory: growth of nanomaterials (2D gold flakes) in solution.

The solution-based growth mechanism is a common process for nanomaterials. The Maxwell-Garnett theory (for light-matter interactions) describes the solution growth in an effective medium, homogenized by a mean electromagnetic field, which applies when materials are in a stationary phase. However, the charge transitions (inter- and intra-transitions) during the growth of nanomaterials lead to a non-stationary phase and are associated with time-dependent permittivity constant transitions (for nanomaterials). Therefore, time-independence in the standard Maxwell-Garnett theory is lost, resulting in time dependence, ε i(t). This becomes important when the optical spectrum of a solution needs to be deconvoluted at different reaction times since each peak represents a specific charge/energy transfer with a specific permittivity constant. Based on this, we developed a time-resolved deconvolution approach, f(t) ∝ ε i(t), which led us to identify the transitions (inter- and intra-transitions) with their dominated growth regimes. Two gold ion peaks were precisely measured (322 nm and 367 nm) for the inter-transition, and three different polyaniline oxidation states (PAOS) for the intra-transition, including A (372 nm), B (680 nm), and C (530 nm). In the initial reaction time regime (0-90 min), the permittivity constant of gold was found to be highly dependent on time, i.e. f E ∝ ε i(t), since charge transfer takes place from the PAOS to gold ions (i.e. inter-transition leads to a reduction reaction). In the second time regime (90-180 min), the permittivity constant of gold changes as the material deforms from 3D to 2D (f S ∝ ε 3D-2D), i.e. intra-transition (combined with thermal reduction). Our approach provides a new framework for the time-dependent modelling of (an)isotropic solutions of other nanomaterials and their syntheses.

Specific and label-free immunosensing of protein-protein interactions with silicon-based immunoFETs.

The importance of specific and label-free detection of proteins via antigen-antibody interactions for the development of point-of-care testing devices has greatly influenced the search for a more accessible, sensitive, low cost and robust sensors. The vision of silicon field-effect transistor (FET)-based sensors has been an attractive venue for addressing the challenge as it potentially offers a natural path to incorporate sensors with the existing mature Complementary Metal Oxide Semiconductor (CMOS) industry; this provides a stable and reliable technology, low cost for potential disposable devices, the potential for extreme minituarization, low electronic noise levels, etc. In the current review we focus on silicon-based immunological FET (ImmunoFET) for specific and label-free sensing of proteins through antigen-antibody interactions that can potentially be incorporated into the CMOS industry; hence, immunoFETs based on nano devices (nanowire, nanobelts, carbon nanotube, etc.) are not treated here. The first part of the review provides an overview of immunoFET principles of operation and challenges involved with the realization of such devices (i.e. e.g. Debye length, surface functionalization, noise, etc.). In the second part we provide an overview of the state-of-the-art silicon-based immunoFET structures and novelty, principles of operation and sensing performance reported to date.