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This investigation elucidates critical Brønsted and Lewis acid-base interactions at the titanium dioxide (TiO2) surface that control the interfacial composition and, thus, the energetics of vacuum-processed methylammonium lead iodide (MAPbI3) perovskite active layers (PALs). In situ photoelectron spectroscopy analysis shows that interfacial growth, chemical composition, and energetics of co-deposited methylammonium iodide (MAI)/PbI2 thin films are significantly different on bare and (3-aminopropyl)triethoxysilane (APTES)-functionalized TiO2 surfaces. Mass spectroscopy analysis indicates that MAI dissociates into hydrogen iodide and methylamine in the gas phase and suggests that MAPbI3 nucleation is preceded by adsorption and coupling of these volatile MAI precursors. Prior to MAPbI3 nucleation on the bare TiO2 surface, we suggest that high coverages of methylamine adsorbed to surface defect sites (e.g., undercoordinated Ti atoms and hydroxyls) promote island-like growth of large, PbI2-rich nuclei that inhibit nucleation and lead to a thick substoichiometric interface layer that impedes charge transport and collection energetics. APTES functional groups passivate TiO2 surface defects and facilitate more conformal growth of small, PbI2-rich nuclei that enhance MAPbI3 nucleation and significantly improve interfacial energetics for charge transport and extraction. This work highlights the considerable influence of TiO2 surface chemistry on PAL composition and energetics, which are critical factors that impact the performance and long stability of these materials in emerging photovoltaic device technologies.
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We show for the first time that the frontier orbital energetics (conduction band minimum (CBM) and valence band maximum (VBM)) of device-relevant, methylammonium bromide (MABr)-doped, formamidinium lead trihalide perovskite (FA-PVSK) thin films can be characterized using UV-vis spectroelectrochemistry, which provides an additional and straightforward experimental technique for determining energy band values relative to more traditional methods based on photoelectron spectroscopy. FA-PVSK films are processed via a two-step deposition process, known to provide high efficiency solar cells, on semitransparent indium tin oxide (ITO) and titanium dioxide (TiO2) electrodes. Spectroelectrochemical characterization is carried out in a nonsolvent electrolyte, and the onset potential for bleaching of the FA-PVSK absorbance is used to estimate the CBM, which provides values of ca. -4.0 eV versus vacuum on both ITO and TiO2 electrodes. Since electron injection occurs from the electrode to the perovskite, the CBM is uniquely probed at the buried metal oxide/FA-PVSK interface, which is otherwise difficult to characterize for thick films. UPS characterization of the same FA-PVSK thin films provide complementary near-surface measurements of the VBM and electrode-dependent energetics. In addition to energetics, controlled electrochemical charge injection experiments in the nonsolvent electrolyte reveal decomposition pathways that are related to morphology-dependent heterogeneity in the electrochemical and chemical stability of these films. X-ray photoelectron spectroscopy of these electrochemically treated FA-PVSK films shows changes in the average near-surface stoichiometry, which suggests that lead-rich crystal termination planes are the most likely sites for electron trapping and thus nanometer-scale perovskite decomposition.
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This report focuses on the evaluation of the electrochemical properties of both solution-deposited sol-gel (sg-ZnO) and sputtered (sp-ZnO) zinc oxide thin films, intended for use as electron-collecting interlayers in organic solar cells (OPVs). In the electrochemical studies (voltammetric and impedance studies), we used indium-tin oxide (ITO) over coated with either sg-ZnO or sp-ZnO interlayers, in contact with either plain electrolyte solutions, or solutions with probe redox couples. The electroactive area of exposed ITO under the ZnO interlayer was estimated by characterizing the electrochemical response of just the oxide interlayer and the charge transfer resistance from solutions with the probe redox couples. Compared to bare ITO, the effective electroactive area of ITO under sg-ZnO films was ca. 70%, 10%, and 0.3% for 40, 80, and 120 nm sg-ZnO films. More compact sp-ZnO films required only 30 nm thicknesses to achieve an effective electroactive ITO area of ca. 0.02%. We also examined the electrochemical responses of these same ITO/ZnO heterojunctions overcoated with device thickness pure poly(3-hexylthiophehe) (P3HT), and donor/acceptor blended active layers (P3HT:PCBM). Voltammetric oxidation/reduction of pure P3HT thin films on ZnO/ITO contacts showed that pinhole pathways exist in ZnO films that permit dark oxidation (ITO hole injection into P3HT). In P3HT:PCBM active layers, however, the electrochemical activity for P3HT oxidation is greatly attenuated, suggesting PCBM enrichment near the ZnO interface, effectively blocking P3HT interaction with the ITO contact. The shunt resistance, obtained from dark current-voltage behavior in full P3HT/PCBM OPVs, was dependent on both (i) the porosity of the sg-ZnO or sp-ZnO films (as revealed by probe molecule electrochemistry) and (ii) the apparent enrichment of PCBM at ZnO/P3HT:PCBM interfaces, both effects conveniently revealed by electrochemical characterization. We anticipate that these approaches will be applicable to a wider array of solution-processed interlayers for "printable" solar cells.
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We demonstrate new approaches to the characterization of oxidized regioregular poly(3-hexylthiophene-2,5-diyl) (P3HT) that results from electronic equilibration with device-relevant high work function electrical contacts using high-resolution X-ray (XPS) and ultraviolet (UPS) photoelectron spectroscopy (PES). Careful interpretation of photoemission signals from thiophene sulfur atoms in thin (ca. 20 nm or less) P3HT films provides the ability to uniquely elucidate the products of charge transfer between the polymer and the electrical contact, which is a result of Fermi-level equilibration between the two materials. By comparing high-resolution S 2p core-level spectra to electrochemically oxidized P3HT standards, the extent of the contact doping reaction is quantified, where one in every six thiophene units (ca. 20%) in the first monolayer is oxidized. Finally, angle-resolved XPS of both pure P3HT and its blends with phenyl-C61-butyric acid methyl ester (PCBM) confirms that oxidized P3HT species exist near contacts with work functions greater than ca. 4 eV, providing a means to characterize the interface and "bulk" region of the organic semiconductor in a single film.
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The synthesis of polymeric materials using elemental sulfur (S8) as the chemical feedstock has recently been developed using a process termed inverse vulcanization. The preparation of chemically stable sulfur copolymers was previously prepared by the inverse vulcanization of S8 and 1,3-diisopropenylbenzene (DIB); however, the development of synthetic methods to introduce new chemical functionality into this novel class of polymers remains an important challenge. In this report the introduction of polythiophene segments into poly(sulfur-random-1,3-diisopropenylbenzene) is achieved by the inverse vulcanization of S8 with a styrenic functional 3,4-propylenedioxythiophene (ProDOT-Sty) and DIB, followed by electropolymerization of ProDOT side chains. This methodology demonstrates for the first time a facile approach to introduce new functionality into sulfur and high sulfur content polymers, while specifically enhancing the charge conductivity of these intrinsically highly resistive materials.
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Lasing from an organic polymer is demonstrated in a device utilizing a distributed feedback (DFB) grating, manufactured by microcontact molding of CdSe nanocrystals (NCs) directly on top of the emitter layer. Besides the simpler fabrication in comparison with a reference device based on a photolithographically prepared DFB grating in a bottom dielectric layer, a much higher DFB strength for NC-gratings is observed, resulting in reduced lasing threshold and a fourfold differential lasing efficiency.
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OBJECTIVE: To compare the cognitive and language development of children born to women with epilepsy (WWE) exposed in utero to levetiracetam (LEV) or sodium valproate (VPA) and control children born to women without epilepsy not taking medication during pregnancy. METHODS: The children, aged between 36 and 54 months, were recruited from the United Kingdom and assessed using the Griffiths Mental Development Scales and the Reynell Language Development Scale. Maternal demographic and epilepsy information was also collected for use in statistical regression. This is an observational study with researchers not involved in the clinical management of the mothers enrolled. RESULTS: After controlling for confounding variables, children exposed to LEV in utero (n = 53) did not differ from unexposed control children (n = 131) on any scale administered. Children exposed to VPA (n = 44) in utero scored, on average, 15.8 points below children exposed to LEV on measures of gross motor skills (95% confidence interval [CI] -24.5 to -7.1, p < 0.001), 6.4 points below on comprehension language abilities (95% CI -11.0 to -1.8, p = 0.005), and 9.5 points below on expressive language abilities (95% CI -14.7 to -4.4, p < 0.001). CONCLUSION: The current study indicates that children exposed to LEV in utero were superior in their language and motor development in comparison to children exposed to VPA. This information should be used collaboratively between health care professionals and WWE when deciding on women's preferred choice of antiepileptic drug.
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Anticonvulsivantes/efectos adversos , Desarrollo Infantil/efectos de los fármacos , Desarrollo del Lenguaje , Piracetam/análogos & derivados , Efectos Tardíos de la Exposición Prenatal/diagnóstico , Ácido Valproico/efectos adversos , Adulto , Anticonvulsivantes/administración & dosificación , Preescolar , Epilepsia/tratamiento farmacológico , Femenino , Humanos , Levetiracetam , Masculino , Piracetam/administración & dosificación , Piracetam/efectos adversos , Embarazo , Complicaciones del Embarazo/diagnóstico , Complicaciones del Embarazo/epidemiología , Efectos Tardíos de la Exposición Prenatal/epidemiología , Estudios Prospectivos , Reino Unido/epidemiología , Ácido Valproico/administración & dosificaciónRESUMEN
A continuum of intermediate states (current levels) is demonstrated for an organic diode utilizing a photochromic (dithienylethene) switching layer. Specific intermediate states can be attained by controlling the fraction of closed isomer (X) in the transduction layer, affording a novel methodology for multilevel storage applications. The analog response of the device is discussed in terms of the concentration and morphology of closed dithienylethene isomer, which can be accessed via optical and electrical switching reactions.
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Photochromic molecules provide an intriguing and relatively untapped alternative to traditional materials utilized in organic memory devices. Here, we review recent progress in the implementation of photochromic molecules in electrically-addressed organic memory devices. Recent results for a lightemitting photochromic organic diode are highlighted in the context of multifunctional devices with the ability to simultaneously operate as multilevel memory, signage and display elements. Furthermore, a set of design rules for successful implementation of photochromic compounds in organic memory devices are suggested.
RESUMEN
OBJECTIVE: Children born to women with epilepsy (WWE), exposed in utero to levetiracetam (LEV, n = 51), were assessed for early cognitive development and compared to children exposed to sodium valproate in utero (VPA, n = 44) and a group of children representative of the general population (n = 97). METHODS: Children were recruited prospectively from 2 cohorts in the United Kingdom and assessed using the Griffiths Mental Development Scale (1996), aged <24 months. Information regarding maternal demographics were collected and controlled for. This is an observational study with researchers not involved in the clinical management of the WWE. RESULTS: On overall developmental ability, children exposed to LEV obtained higher developmental scores when compared to children exposed to VPA (p < 0.001). When compared, children exposed to LEV did not differ from control children (p = 0.62) on overall development. Eight percent of children exposed to LEV in utero fell within the below average range (DQ score of <84), compared with 40% of children exposed to VPA. After controlling for maternal epilepsy and demographic factors using linear regression analysis, exposure to LEV in utero was not associated with outcome (p = 0.67). Conversely, when compared with VPA exposure, LEV exposure was associated with higher scores for the overall developmental quotient (p < 0.001). CONCLUSION: Children exposed to LEV in utero are not at an increased risk of delayed early cognitive development under the age of 24 months. LEV may therefore be a preferable drug choice, where appropriate, for WWE prior to and of childbearing age.
Asunto(s)
Anticonvulsivantes/efectos adversos , Desarrollo Infantil , Epilepsia/tratamiento farmacológico , Exposición Materna , Piracetam/análogos & derivados , Efectos Tardíos de la Exposición Prenatal/fisiopatología , Ácido Valproico/efectos adversos , Preescolar , Cognición , Femenino , Humanos , Lactante , Levetiracetam , Intercambio Materno-Fetal , Piracetam/efectos adversos , Embarazo , Complicaciones del Embarazo/tratamiento farmacológico , Efectos Tardíos de la Exposición Prenatal/psicología , Estudios RetrospectivosRESUMEN
We demonstrate the electrochemical capture of CdSe semiconductor nanocrystals (NCs), with thiophene-terminated carboxylic acid capping ligands, at the surfaces of electrodeposited poly(thiophene) films (i) poly((diethyl)propylenedixoythiophene), P(Et)(2)ProDOT; (ii) poly(propylenedioxythiophene), PProDOT; and (iii) poly(ethylenedioxythiophene), PEDOT, coupled with the exploration of their photoelectrochemical properties. Host polymer films were created using a kinetically controlled electrodeposition protocol on activated indium-tin oxide electrodes (ITO), producing conformal films that facilitate high rates of electron transfer. ProDOT-terminated, ligand-capped CdSe-NCs were captured at the outer surface of the host polymer films using a unique pulse-potential step electrodeposition protocol, providing for nearly close-packed monolayers of the NCs at the host polymer/solution interface. These polymer-confined CdSe NCs were used as sensitizers in the photoelectrochemical reduction of methyl viologen (MV(+2)). High internal quantum efficiencies (IQEs) are estimated for photoelectrochemical sensitized MV(+2) reduction using CdSe NCs ranging from 3.1 to 7.0 nm diameters. Cathodic photocurrent at high MV(+2) concentrations are limited by the rate of hole-capture by the host polymer from photoexcited NCs. The rate of this hole-capture process is determined by (a) the onset potential for reductive dedoping of the host polymer film; (b) the concentration ratio of neutral to oxidized forms of the host polymer ([P(n)]/[P(ox)]); and (c) the NC diameter, which controls its valence band energy, E(VB). These relationships are consistent with control of photoinduced electron transfer by Marcus-like excess free energy relationships. Our electrochemical assembly methods provide an enabling route to the capture of functional NCs in conducting polymer hosts in both photoelectrochemical and photovoltaic energy conversion systems.
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We describe the formation of efficient transmission diffraction gratings created from patterned high quality ligand-capped CdSe nanocrystals (NCs), using a facile microcontact molding procedure. Soft polymer replicas of commercially available master gratings were "inked" with solvated NCs and the resulting pattern transferred to a variety of substrates after drying. Large-area (>0.5 cm(2)), defect free diffraction gratings were prepared with a variety of submicrometer line spacings and feature sizes down to ca. 160 nm. The morphology of the resulting pattern was tuned by controlling the concentration of the NC-based ink. Optimized gratings (1200 g/mm) showed an increase in transmission diffraction efficiency (DE) with increasing nanocrystal diameter. DE = ca. 15% (488 nm) for 2.5 nm diameter NCs versus DE = ca. 25-30% (488 nm) for 7.3 nm nanocrystals. These increases in DE are ascribed to changes in both the real (n) and imaginary (k) components of the complex index of refraction as NC diameter increases. We demonstrate the ability to in- and out-couple incident laser radiation into internal reflection elements using these stamped NC gratings, including single-mode waveguides, offering a novel application of ordered nanocrystal thin films.
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A planar fiber-optic chip (FOC) has been developed using side-polished optical fibers and characterized for broadband absorbance and fluorescence detection of molecular films. FOC technology combines the sensitivity of an attenuated total reflection (ATR) element with the ease of use of fiber-optic-based spectrometers and light sources to create an improved platform for spectroscopic analysis of molecular adsorbates. A multi-mode optical fiber (core diameter = 50 mum, numerical aperture = 0.22, stepped refractive index profile) mounted in a glass V-groove block was side-polished to create a planar platform that allows access to the evanescent field escaping from the fiber core. For this generation of FOC technology, the exposed evanescent field has an interaction length of approximately 17.2 mm. The FOC platform was independently characterized through measurements of thin-film and bulk absorbing samples. The device performance was compared to the existing ATR technology and methods for increasing sensitivity of the FOC were investigated and validated. Additionally, we have demonstrated the ability of the FOC to both evanescently excite and collect fluorescence through guided modes of the optical fiber for a surface-confined luminescent semiconductor nanoparticle film (4 nm diameter, ligand capped, CdSe core). The FOC described here with a supported planar interface can facilitate the use of conventional planar deposition technologies and provide a robust planar platform that is amenable for incorporation into various sensor technologies.