Coherent waveguide laser arrays in semiconductor quantum well membranes.

Coherent laser arrays compatible with silicon photonics are demonstrated in a waveguide geometry in epitaxially grown semiconductor membrane quantum well lasers transferred on substrates of silicon carbide and oxidised silicon; we record lasing thresholds as low as 60 mW of pump power. We study the emission of single lasers and arrays of lasers in the sub-mm range. We are able to create waveguide laser arrays with modal widths of approximately 5 - 10 µm separated by 10 - 20 µm, using real and reciprocal space imaging we study their emission characteristics and find that they maintain their mutual coherence while operating on either single or multiple longitudinal modes per lasing cavity.

High power 739 nm VECSELs for future Yb+ ion cooling.

We present an operational characterization of a vertical-external-cavity surface-emitting laser emitting around 739 nm with over 150 mW in a single fundamental spatial mode. Results show that the laser is capable of oscillating on a single cavity axial mode at 740 nm for up to 22 mW. Tuning of the optical emission is shown to reach 737.3 nm. Furthermore, at best performance, the laser exhibits a slope efficiency of 8.3% and a threshold power of 1.27 W for an output coupler reflectivity of 98%.

Supercontinuum generation in tantalum pentoxide waveguides for pump wavelengths in the 900 nm to 1500 nm spectral region.

We characterize the spectral broadening performance in silica clad and unclad Tantalum pentoxide (Ta2O5) waveguides as a function of the input pulse central wavelength and polarization, sweeping over a wavelength range from 900 nm to 1500 nm, with an average incident power of 110 mW. The waveguides are 0.7 µm high and between 2.2 and 3.2 µm wide, and the SiO2 top cladding layer is 2 µm thick. We model the dispersion of the higher order spatial modes, and use numerical simulations based on the generalized nonlinear Schrödinger equation to analyze the nonlinear behaviour of the spatial modes within the waveguides as well as the dispersive effects observed in the experiments. We achieve octave spanning supercontinuum with an average power of 175 mW incident on the waveguide at 1000 nm pump wavelength.

Zinc-indiffused MgO:PPLN waveguides for blue/UV generation via VECSEL pumping.

We present the design and characterization of a zinc-indiffused periodically poled lithium-niobate ridge waveguide for second-harmonic generation of ∼390nm light from 780 nm. We use a newly developed, broadband near-infrared vertical external-cavity surface-emitting laser (VECSEL) to investigate the potential for lower-footprint nonlinear optical pump sources as an alternative to larger commercial laser systems. We demonstrate a VECSEL with an output power of 500 mW, containing an intracavity birefringent filter for spectral narrowing and wavelength selection. In this first demonstration of using a VECSEL to pump a nonlinear waveguide, we present the ability to generate 1 mW of ∼390nm light with further potential for increased efficiency and size reduction.

Saturated gain spectrum of VECSELs determined by transient measurement of lasing onset.

We describe time-resolved measurements of the evolution of the spectrum of radiation emitted by an optically-pumped continuous-wave InGaAs-GaAs quantum well laser, recorded as lasing builds up from noise to steady state. We extract a fitting parameter corresponding to the gain dispersion of the parabolic spectrum equal to -79 ± 30 fs2 and -36 ± 6 fs2 for a resonant and anti-resonant structure, respectively. Furthermore the recorded evolution of the spectrum allows for the calculation of an effective FWHM gain bandwidth for each structure, of 11 nm and 18 nm, respectively.

4.35 kW peak power femtosecond pulse mode-locked VECSEL for supercontinuum generation.

We report a passively mode-locked vertical external cavity surface emitting laser (VECSEL) producing 400 fs pulses with 4.35 kW peak power. The average output power was 3.3 W and the VECSEL had a repetition rate of 1.67 GHz at a center wavelength of 1013 nm. A near-antiresonant, substrate-removed, 10 quantum well (QW) gain structure designed to enable femtosecond pulse operation is used. A SESAM which uses fast carrier recombination at the semiconductor surface and the optical Stark effect enables passive mode-locking. When 1 W of the VECSEL output is launched into a 2 m long photonic crystal fiber (PCF) with a 2.2 µm core, a supercontinuum spanning 175 nm, with average power 0.5 W is produced.

175 GHz, 400-fs-pulse harmonically mode-locked surface emitting semiconductor laser.

We report a harmonically mode-locked vertical external cavity surface emitting laser (VECSEL) producing 400 fs pulses at a repetition frequency of 175 GHz with an average output power of 300 mW. Harmonic mode-locking was established using a 300 µm thick intracavity single crystal diamond heat spreader in thermal contact with the front surface of the gain sample using liquid capillary bonding. The repetition frequency was set by the diamond microcavity and stable harmonic mode locking was achieved when the laser cavity length was tuned so that the laser operated on the 117th harmonic of the fundamental cavity. When an etalon placed intracavity next to the gain sample, but not in thermal contact was used pulse groups were observed. These contained 300 fs pulses with a spacing of 5.9 ps. We conclude that to achieve stable harmonic mode locking at repetition frequencies in the 100s of GHz range in a VECSEL there is a threshold pulse energy above which harmonic mode locking is achieved and below which groups of pulses are observed.

Repetition-frequency-tunable mode-locked surface emitting semiconductor laser between 2.78 and 7.87 GHz.

We report a repetition frequency tunable, passively mode-locked vertical-external-cavity surface-emitting semiconductor laser (VECSEL) with continuous repetition frequency tuning between 2.78 and 7.87 GHz using mechanical tuning of the laser cavity length. The laser emits near-transform-limited, sub-500-fs pulses over almost an octave tuning range between 2.78 and 5 GHz. At repetition rates above 6 GHz the pulse duration increases to ~2.5 ps. Over the entire tuning range the laser emits an average output power of 40 ± 5 mW in a fundamental transverse mode. The change in pulse duration highlights a change in the dominant modelocking mechanism which forms the pulses. At high repetition frequencies the pulse duration is set by the saturable absorber recovery time. At low repetition frequencies the fluence and peak intensity on the SESAM increases to a point where the fast pulse shaping mechanisms of the optical Stark effect and carrier thermalization dominate the pulse shortening.

Cooperative luminescence and absorption in Ytterbium-doped silica fiber and the fiber nonlinear transmission coefficient at lambda=980 nm with a regard to the Ytterbium ion-pairs' effect: Comment.

Recently, significant power losses in ytterbium-doped fibers have been interpreted as resulting from the formation of ytterbium ion pairs [A. V. Kir'yanov et al., Opt. Express 14, 3981 (2006)]. However, there appears to be strong evidence against this model.

High-power, high repetition rate picosecond and femtosecond sources based on Yb-doped fiber amplification of VECSELs.

Picosecond pulses at gigahertz repetition rates from two different passively mode-locked VECSELs are amplified to high powers in cascaded ytterbium doped fiber amplifiers. Small differences in pulse durations between the two VECSELs led to amplification in different nonlinear regimes. The shorter 0.5 ps pulses could be amplified to 53 W of average power in the parabolic pulse regime. This was confirmed by excellent pulse compression down to 110 fs. The VECSEL producing longer 4.6 ps pulses was amplified in an SPM dominated regime up to 200 W of average power but with poor recompressed pulse quality.

Continuous-wave operation of monolithically grown 1.5-microm optically pumped vertical-external-cavity surface-emitting lasers.

Continuous-wave operation, to as high as 7 degrees C, of 1.5-microm optically pumped vertical-external-cavity surface-emitting lasers is reported. The epitaxial structure, monolithically grown on InP by metal-organic chemical vapor deposition, consists of an InAlAs/GaInAlAs Bragg reflector, an InGaAs/InGaAsP active region, and an InP capping layer. The threshold incident pump intensity is <9 kW/cm2.