RESUMEN
Multifunctional vertically aligned nanocomposite (VAN) thin films exhibit considerable potential in diverse fields. Here, a BaTiO3-FeCoNi alloy (BTO-FCN) system featuring an ultrathin ternary FCN alloy nanopillar array embedded in the BTO matrix has been developed with tailorable nanopillar size and interpillar distance. The magnetic alloy nanopillars combined with a ferroelectric oxide matrix present intriguing multifunctionality and coupling properties. The room-temperature magnetic response proves the soft magnet nature of the BTO-FCN films with magnetic anisotropy has been demonstrated. Furthermore, the anisotropic nature of the dielectric-metal alloy VAN renders it an ideal candidate for hyperbolic metamaterial (HMM), and the epsilon-near-zero (ENZ) wavelength, where the real part of permittivity (ε') turns to negative, can be tailored from â¼700 nm to â¼1050 nm. Lastly, room-temperature multiferroicity has been demonstrated via interfacial coupling between the magnetic nanopillars and ferroelectric matrix.
RESUMEN
The integration of nanocomposite thin films with combined multifunctionalities on flexible substrates is desired for flexible device design and applications. For example, combined plasmonic and magnetic properties could lead to unique optical switchable magnetic devices and sensors. In this work, a multiphase TiN-Au-Ni nanocomposite system with core-shell-like Au-Ni nanopillars embedded in a TiN matrix has been demonstrated on flexible mica substrates. The three-phase nanocomposite film has been compared with its single metal nanocomposite counterparts, i.e., TiN-Au and TiN-Ni. Magnetic measurement results suggest that both TiN-Au-Ni/mica and TiN-Ni/mica present room-temperature ferromagnetic property. Tunable plasmonic property has been achieved by varying the metallic component of the nanocomposite films. The cyclic bending test was performed to verify the property reliability of the flexible nanocomposite thin films upon bending. This work opens a new path for integrating complex nitride-based nanocomposite designs on mica towards multifunctional flexible nanodevice applications.
RESUMEN
Hyperbolic metamaterials (HMM) possess significant anisotropic physical properties and tunability and thus find many applications in integrated photonic devices. HMMs consisting of metal and dielectric phases in either multilayer or vertically aligned nanocomposites (VAN) form are demonstrated with different hyperbolic properties. Herein, self-assembled HfO2 -Au/TiN-Au multilayer thin films, combining both the multilayer and VAN designs, are demonstrated. Specifically, Au nanopillars embedded in HfO2 and TiN layers forming the alternative layers of HfO2 -Au VAN and TiN-Au VAN. The HfO2 and TiN layer thickness is carefully controlled by varying laser pulses during pulsed laser deposition (PLD). Interestingly, tunable anisotropic physical properties can be achieved by adjusting the bi-layer thickness and the number of the bi-layers. Type II optical hyperbolic dispersion can be obtained from high layer thickness structure (e.g., 20 nm), while it can be transformed into Type I optical hyperbolic dispersion by reducing the thickness to a proper value (e.g., 4 nm). This new nanoscale hybrid metamaterial structure with the three-phase VAN design shows great potential for tailorable optical components in future integrated devices.
RESUMEN
Filamentary-type resistive switching devices, such as conductive bridge random-access memory and valence change memory, have diverse applications in memory and neuromorphic computing. However, the randomness in filament formation poses challenges to device reliability and uniformity. To overcome this issue, various defect engineering methods have been explored, including doping, metal nanoparticle embedding, and extended defect utilization. In this study, we present a simple and effective approach using self-assembled uniform Au nanoelectrodes to controll filament formation in HfO2 resistive switching devices. By concentrating the electric field near the Au nanoelectrodes within the BaTiO3 matrix, we significantly enhanced the device stability and reduced the threshold voltage by up to 45% in HfO2-based artificial neurons compared to the control devices. The threshold voltage reduction is attributed to the uniformly distributed Au nanoelectrodes in the insulating matrix, as confirmed by COMSOL simulation. Our findings highlight the potential of nanostructure design for precise control of filamentary-type resistive switching devices.