Femtosecond phase-transition in hard x-ray excited bismuth.

The evolution of bismuth crystal structure upon excitation of its A1g phonon has been intensely studied with short pulse optical lasers. Here we present the first-time observation of a hard x-ray induced ultrafast phase transition in a bismuth single crystal at high intensities (~1014 W/cm2). The lattice evolution was followed using a recently demonstrated x-ray single-shot probing setup. The time evolution of the (111) Bragg peak intensity showed strong dependence on the excitation fluence. After exposure to a sufficiently intense x-ray pulse, the peak intensity dropped to zero within 300 fs, i.e. faster than one oscillation period of the A1g mode at room temperature. Our analysis indicates a nonthermal origin of a lattice disordering process, and excludes interpretations based on electron-ion equilibration process, or on thermodynamic heating process leading to plasma formation.

Chemistry and structure of homoepitaxial SrTiO3 films and their influence on oxide-heterostructure interfaces.

The properties of single-crystal SrTiO3 substrates and homoepitaxial SrTiO3 films grown by pulsed laser deposition have been compared, in order to understand the loss of interfacial conductivity when more than a critical thickness of nominally homoepitaxial SrTiO3 is inserted between a LaAlO3 film and a SrTiO3 substrate. In particular, the chemical composition and the structure of homoepitaxial SrTiO3 investigated by low-energy ion-scattering and surface X-ray diffraction show that for insulating heterointerfaces, a Sr-excess is present between the LaAlO3 and homoepitaxial SrTiO3. Furthermore, an increase in the out-of-plane lattice constant is observed in LaAlO3, indicating that the conductivity both with and without insertion of the SrTiO3 thin film originates from a Zener breakdown associated with the polar catastrophe. When more than a critical thickness of homoepitaxial SrTiO3 is inserted between LaAlO3 and SrTiO3, the electrons transferred by the electronic reconstruction are trapped by the formation of a Sr-rich secondary phase and Sr-vacancies. The migration of Sr towards the surface of homoepitaxial SrTiO3 and accompanying loss of interfacial conductivity can be delayed by reducing the Sr-content in the PLD target.

The Materials Science beamline upgrade at the Swiss Light Source.

The Materials Science beamline at the Swiss Light Source has been operational since 2001. In late 2010, the original wiggler source was replaced with a novel insertion device, which allows unprecedented access to high photon energies from an undulator installed in a medium-energy storage ring. In order to best exploit the increased brilliance of this new source, the entire front-end and optics had to be redesigned. In this work, the upgrade of the beamline is described in detail. The tone is didactic, from which it is hoped the reader can adapt the concepts and ideas to his or her needs.

Interface Fermi states of LaAlO3/SrTiO3 and related heterostructures.

The interfaces of LaAlO3/SrTiO3 and (LaAlO3)(x)(SrTiO3)(1-x)/SrTiO3 heterostructures have been investigated by soft x-ray photoelectron spectroscopy for different layer thicknesses across the insulator-to-metal interface transition. The valence band and Fermi edge were probed using resonant photoemission across the Ti L(2,3) absorption edge. The presence of a Fermi-edge signal originating from the partially filled Ti 3d orbitals is only found in the conducting samples. No Fermi-edge signal could be detected for insulating samples below the critical thickness. Furthermore, the angular dependence of the Fermi intensity allows the determination of the spatial extent of the conducting electron density perpendicular to the interface.

Tunable conductivity threshold at polar oxide interfaces.

The physical mechanisms responsible for the formation of a two-dimensional electron gas at the interface between insulating SrTiO(3) and LaAlO(3) have remained a contentious subject since its discovery in 2004. Opinion is divided between an intrinsic mechanism involving the build-up of an internal electric potential due to the polar discontinuity at the interface between SrTiO(3) and LaAlO(3), and extrinsic mechanisms attributed to structural imperfections. Here we show that interface conductivity is also exhibited when the LaAlO(3) layer is diluted with SrTiO(3), and that the threshold thickness required to show conductivity scales inversely with the fraction of LaAlO(3) in this solid solution, and thereby also with the layer's formal polarization. These results can be best described in terms of the intrinsic polar-catastrophe model, hence providing the most compelling evidence, to date, in favour of this mechanism.

Atomic imaging and direct phase retrieval using anomalous surface x-ray diffraction.

The application of multi-wavelength anomalous diffraction to thin films, interfaces and surface structures is presented. The method directly determines the amplitudes and phases of the complex surface structure factors from surface x-ray diffraction data, measured at three different energies around the absorption edge of one of the elements present in the film. Thereby, one is able to directly Fourier transform the data, which immediately provides meaningful and unambiguous electron-density distributions. These serve as a starting point for subsequent structural refinement. The robustness of the algorithm was evaluated on simulated data as a proof of principle. The experimental limitations and their effect on the method will be discussed as well as stability tests for the algorithm, such as the positions of the anomalous scatterers and the interfacial roughness. It will be shown that the method can be applied to real structures. The algorithm was tested on real data from a thin film of SrTiO(3) grown on NdGaO(3)(110).

Electrostriction at the LaAlO3/SrTiO3 interface.

We present a direct comparison between experimental data and ab initio calculations for the electrostrictive effect in the polar LaAlO(3) layer grown on SrTiO(3) substrates. From the structural data, a complete screening of the LaAlO(3) dipole field is observed for film thicknesses between 6 and 20 uc. For thinner films, an expansion of the c axis of 2% matching the theoretical predictions for an electrostrictive effect is observed experimentally.

Evolution of the interfacial structure of LaAlO3 on SrTiO3.

The evolution of the atomic structure of LaAlO_{3} grown on SrTiO_{3} was investigated using surface x-ray diffraction in conjunction with model-independent, phase-retrieval algorithms between two and five monolayers film thickness. A depolarizing buckling is observed between cation and oxygen positions in response to the electric field of polar LaAlO_{3}, which decreases with increasing film thickness. We explain this in terms of competition between elastic strain energy, electrostatic energy, and electronic reconstructions. Based on these structures, the threshold for formation of a two-dimensional electron system at a film thickness of 4 monolayers is quantitatively explained. The findings are also qualitatively reproduced by density-functional-theory calculations.

Profiling the interface electron gas of LaAlO3/SrTiO3 heterostructures with hard x-ray photoelectron spectroscopy.

The conducting interface of LaAlO3/SrTiO3 heterostructures has been studied by hard x-ray photoelectron spectroscopy. From the Ti 2p signal and its angle dependence we derive that the thickness of the electron gas is much smaller than the probing depth of 4 nm and that the carrier densities vary with increasing number of LaAlO3 overlayers. Our results point to an electronic reconstruction in the LaAlO3 overlayer as the driving mechanism for the conducting interface and corroborate the recent interpretation of the superconducting ground state as being of the Berezinskii-Kosterlitz-Thouless type.

Synchrotron radiation hardness studies of PILATUS II.

A synchrotron beam has been used to investigate the radiation tolerance of a PILATUS II module. It has been demonstrated that radiation-induced threshold shifts become significant above 30 Mrad. Individual adjustment of pixel thresholds after irradiation enabled retention of standard behaviour in excess of 40 Mrad. This implies that a module can be continuously irradiated for in excess of 40 days at an individual pixel count rate of 10(6) counts s(-1).

Performance of single-photon-counting PILATUS detector modules.

PILATUS is a silicon hybrid pixel detector system, operating in single-photon-counting mode, that has been developed at the Paul Scherrer Institut for the needs of macromolecular crystallography at the Swiss Light Source (SLS). A calibrated PILATUS module has been characterized with monochromatic synchrotron radiation. The influence of charge sharing on the count rate and the overall energy resolution of the detector were investigated. The dead-time of the system was determined using the attenuated direct synchrotron beam. A single module detector was also tested in surface diffraction experiments at the SLS, whereby its performance regarding fluorescence suppression and saturation tolerance were evaluated, and have shown to greatly improve the sensitivity, reliability and speed of surface diffraction data acquisition.

Graphene on Ru(0001): a 25 x 25 supercell.

The structure of a single layer of graphene on Ru(0001) has been studied using surface x-ray diffraction. A surprising superstructure containing 1250 carbon atoms has been determined, whereby 25 x 25 graphene unit cells lie on 23 x 23 unit cells of Ru. Each supercell contains 2 x 2 crystallographically inequivalent subcells caused by corrugation. Strong intensity oscillations in the superstructure rods demonstrate that the Ru substrate is also significantly corrugated down to several monolayers and that the bonding between graphene and Ru is strong and cannot be caused by van der Waals bonds. Charge transfer from the Ru substrate to the graphene expands and weakens the C-C bonds, which helps accommodate the in-plane tensile stress. The elucidation of this superstructure provides important information in the potential application of graphene as a template for nanocluster arrays.

Conducting interfaces between polar and non-polar insulating perovskites.

Two-dimensional electron gases in semiconductors have found use in applications such as optoelectronics, high-power radio-frequency and magnetoelectronic devices. The ability to grow heterostructures of oxides exhibiting similar effects is a significant step towards the fabrication of all-oxide devices. Here, we give an overview of recent studies of two-dimensional electron gases formed at the interface between polar and non-polar perovskites. We discuss the proposed explanations of the origin of the conductivity and properties of the ground state.

Structural basis for the conducting interface between LaAlO3 and SrTiO3.

The complete atomic structure of a five-monolayer film of LaAlO3 on SrTiO3 has been determined for the first time by surface x-ray diffraction in conjunction with the coherent Bragg rod analysis phase-retrieval method and further structural refinement. Cationic mixing at the interface results in dilatory distortions and the formation of metallic La(1-x)SrxTiO3. By invoking electrostatic potential minimization, the ratio of Ti{4+}/Ti{3+} across the interface was determined, from which the lattice dilation could be quantitatively explained using ionic radii considerations. The correctness of this model is supported by density functional theory calculations. Thus, the formation of a quasi-two-dimensional electron gas in this system is explained, based on structural considerations.

Surface of strontium titanate.

We report the first complete determination, using surface x-ray diffraction, of the surface structure of TiO2-terminated SrTiO3(001), both at room temperature in vacuum, and also hot, under typical conditions used for thin film growth. The cold structure consists of a mixture of a (1x1) relaxation and (2x1) and (2x2) reconstructions. The latter disappear over several minutes upon heating. The structures are best modeled by a TiO2-rich surface similar to that proposed by Erdman et al. [Nature (London) 419, 55 (2002).10.1038/nature01010]. Both reconstructions have been shown by density functional theory to be energetically favorable. The calculated (1x1) surface energy is higher, indicating that it may be a disordered mixture of the reconstructions. Atomic displacements are significant down to three unit cells, which may have important implications on possible surface ferroelectric phenomena in SrTiO3.

Energetic surface smoothing of complex metal-oxide thin films.

A novel energetic smoothing mechanism in the growth of complex metal-oxide thin films is reported from in situ kinetic studies of pulsed laser deposition of on , using x-ray reflectivity. Below 50% monolayer coverage, prompt insertion of energetic impinging species into small-diameter islands causes them to break up to form daughter islands. This smoothing mechanism therefore inhibits the formation of large-diameter 2D islands and the seeding of 3D growth. Above 50% coverage, islands begin to coalesce and their breakup is thereby suppressed. The energy of the incident flux is instead rechanneled into enhanced surface diffusion, which leads to an increase in the effective surface temperature of DeltaT approximately 500 K. These results have important implications on optimal conditions for nanoscale device fabrication using these materials.

Improved data acquisition in grazing-incidence X-ray scattering experiments using a pixel detector.

The use of an area detector in grazing-incidence X-ray experiments lends many advantages in terms of both speed and reliability. Here a discussion is given of the procedures established using the PILATUS pixel detector developed at the Swiss Light Source for optimizing data acquisition and analysis of surface diffraction data at the Materials Science beamline, especially with regard to reflectivity measurements, crystal truncation and fractional order rods, and grazing-incidence diffraction experiments.

Production and characterization of Ti:sapphire thin films grown by reactive laser ablation with elemental precursors.

Crystalline Ti:sapphire (Ti:Al(2)O(3)) thin films were grown at low temperatures upon Al(2)O(3) (0001) substrates by reactive crossed-beam laser ablation at 248 nm by use of a liquid Ti-Al alloy target and O(2) . The films were investigated ex situ by x-ray diffraction, x-ray photoelectron spectroscopy, and Rutherford backscattering spectrometry. Low-temperature luminescence was identical to that for Ti(3+) ions in bulk samples of Al(2)O(3) .