RESUMEN
A scaling law elucidates the universality in nature, presiding over many physical phenomena which seem unrelated. Thus, exploring the universality class of scaling law in a particular system enlightens its physical nature in relevance to other systems and sometimes unearths an unprecedented new dynamic phase. Here, the dynamics of weakly driven magnetic skyrmions are investigated, and its scaling law is compared with the motion of a magnetic domain wall (DW) creep. This study finds that the skyrmion does not follow the scaling law of the DW creep in 2D space but instead shows a hopping behavior similar to that of the particle-like DW in 1D confinement. In addition, the hopping law satisfies even when a topological charge of the skyrmion is removed. Therefore, the distinct scaling behavior between the magnetic skyrmion and the DW stems from a general principle beyond the topological charge. This study demonstrates that the hopping behavior of skyrmions originates from the bottleneck process induced by DW segments with diverging collective lengths, which is inevitable in any closed-shape spin structure in 2D. This work reveals that the structural topology of magnetic texture determines the universality class of its weakly driven motion, which is distinguished from the universality class of magnetic DW creep.
RESUMEN
The requirements of multifunctionality in thin-film systems have led to the discovery of unique physical properties and degrees of freedom, which exist only in film forms. With progress in growth techniques, one can decrease the film thickness to the scale of a few nanometers (â¼nm), where its unique physical properties are still pronounced. Among advanced ultrathin film systems, ferroelectrics have generated tremendous interest. As a prototype ferroelectric, the electrical properties of BaTiO3 (BTO) films have been extensively studied, and it has been theoretically predicted that ferroelectricity sustains down to â¼nm thick films. However, efforts toward determining the minimum thickness for ferroelectric films have been hindered by practical issues surrounding large leakage currents. In this study, we used â¼nm thick BTO films, exhibiting semiconducting characteristics, grown on a LaAlO3/SrTiO3 (LAO/STO) heterostructure. In particular, we utilized two-dimensional electron gas at the LAO/STO heterointerface as the bottom electrode in these capacitor junctions. We demonstrate that the BTO film exhibits ferroelectricity at room temperature, even when it is only â¼2 unit-cells thick, and the total thickness of the capacitor junction can be reduced to less than â¼4 nm. Observation of ferroelectricity in ultrathin semiconducting films and the resulting shrunken capacitor thickness will expand the applicability of ferroelectrics in the next generation of functional devices.