Exciton Luminescence and Optical Properties of Nanocrystalline Cubic Y2O3 Films Prepared by Reactive Magnetron Sputtering.

This paper presents a comprehensive study of the energy structure, optical characteristics, and spectral-kinetic parameters of elementary excitations in a high-purity nanocrystalline cubic Y2O3 film synthesized by reactive magnetron sputtering. The optical transparency gaps for direct and indirect interband transitions were determined and discussed. The dispersion of the refractive index was established based on the analysis of interference effects. It was found that the refractive index of the Y2O3 film synthesized in this study is higher in order of magnitude than that of the films obtained with the help of other technologies. The intrinsic emission of Y2O3 film has been discussed and associated with the triplet-singlet radiative relaxation of self-trapped and bound excitons. We also studied the temperature behavior of the exciton luminescence of Y2O3 for the first time and determined thermal activation barriers. The optical energy and kinetic parameters of cubic Y2O3 films were analyzed in comparison with those of the monoclinic films of yttrium oxide. The main difference between the optical properties of cubic and monoclinic Y2O3 films was established, which allowed for a supposition of their application prospects.

Energy band gaps and excited states in Si QD/SiO x /R y O z (R = Si, Al, Zr) suboxide superlattices.

X-ray and optical spectroscopies were applied in order to study the band structure and electronic excitations of the SiO x /R y O z (R = Si, Al, Zr) suboxide superlattices. The complementary x-ray emission and absorption measurements allow for the band gap values for the SiO x layers to be established, which are found to have almost no dependency on the cation type R. It is determined that, after annealing, the stoichiometric factor x remains near 1.8 in all the systems under study, implying that the silicon quantum dot synthesis reaction is not fully completed. It is shown that the SiO x /Al2O3 multilayer contains octahedral structural motifs (SiO6) usually found in stishovite, whereas SiO x /SiO2 and SiO x /ZrO2 demonstrate an electronic structure similar to conventional silica. The intrinsic electronic excited states are examined by means of synchrotron-excited photoluminescence spectroscopy. Low-energy UV-excited luminescence of SiO x layers is found to have the same spectrum in all of the studied structures, while VUV-excited spectra strongly depend on the cation R. In these measurements, manifestations of 'slow' exciton-mediated and 'fast' defect-related luminescence are distinguished using nanosecond time resolution. It is shown that both mobile and bounded excitons appear in the suboxide layer under 6.2 eV and 5.8 eV irradiation and then relax radiatively through the triplet-singlet transition of the neighbouring oxygen-deficient centers. The complete picture of the optical excitation and relaxation processes in these materials is illustrated in a general diagram depicting electronic states.