RESUMEN
CH3NH3PbI3 has shown great potential for photodetectors and photovoltaic devices due to its excellent positive response to visible light. However, its real-time response characteristics hinder its application in optical memory and logic operation; moreover, the presence of excessive PbI2 is a double-edged sword. Herein, we constructed a dual-terminal device using a single CH3NH3PbI3 micro/nanowire with two Ag electrodes, and then in situ introduced PbI2 quantum dots (QDs) as hole trap centres by thermal decomposition at 160 °C. An anomalous negative photoconductivity (NPC) effect for sub-bandgap light below the PbI2 bandgap is obtained. Importantly, an electrically erasable nonvolatile photomemory can be realized. Furthermore, the device also exhibits an abnormal positive thermal resistance (PTR)-related thermomemory effect, and the thermal-induced high-resistance state (HRS) can be erased by a large bias or an illumination of 365 nm super-bandgap UV light. Additionally, logical "OR" gate operations are achieved through a combination of 650 nm sub-bandgap light and a 70 °C temperature-induced HRS, as well as a large bias and 365 nm super-bandgap light-triggered low-resistance state. These effects are attributed to the excitation and injection of holes in QDs and structural defect traps. This multifunctional device, integrating real-time sensing, nonvolatile memory, and logical operation, holds significant potential for novel electronic and optoelectronic applications.
RESUMEN
CH3NH3PbI3 is capable of exhibiting a superior photoresponse to visible light, but its self-powered devices are typically formed through p-n junctions. In this study, we fabricated a Ag/CH3NH3PbI3/C dual-terminal asymmetric electrode device using a single CH3NH3PbI3 perovskite micro/nanowire, enabling both the photoresponse and self-powered characteristics of CH3NH3PbI3 to visible light. Compared with traditional p-n junction devices, this simple device demonstrates enhanced interface photovoltaic effects by optimizing the combination of the Ag electrode with CH3NH3PbI3, resulting in superior self-powered characteristics. Under low bias voltage, the device achieves a significant on/off ratio of 103, with superior sensitivity and responsivity as well as a maximum rectification ratio of about 12. The photogenerated voltage and current reach approximately 0.8 V and 2 nA, respectively. This simple, compact, and self-powered asymmetric device exhibits great potential for applications in self-powered optoelectronics and wearable devices. This research provides a promising approach for recognizing and utilizing surface state effects in single nanoscale structures.