Sensitive multicolor indicators for monitoring norepinephrine in vivo.

Genetically encoded indicators engineered from G-protein-coupled receptors are important tools that enable high-resolution in vivo neuromodulator imaging. Here, we introduce a family of sensitive multicolor norepinephrine (NE) indicators, which includes nLightG (green) and nLightR (red). These tools report endogenous NE release in vitro, ex vivo and in vivo with improved sensitivity, ligand selectivity and kinetics, as well as a distinct pharmacological profile compared with previous state-of-the-art GRABNE indicators. Using in vivo multisite fiber photometry recordings of nLightG, we could simultaneously monitor optogenetically evoked NE release in the mouse locus coeruleus and hippocampus. Two-photon imaging of nLightG revealed locomotion and reward-related NE transients in the dorsal CA1 area of the hippocampus. Thus, the sensitive NE indicators introduced here represent an important addition to the current repertoire of indicators and provide the means for a thorough investigation of the NE system.

Development of a genetically-encoded sensor for probing endogenous nociceptin opioid peptide release.

Nociceptin/orphanin-FQ (N/OFQ) is a recently appreciated critical opioid peptide with key regulatory functions in several central behavioral processes including motivation, stress, feeding, and sleep. The functional relevance of N/OFQ action in the mammalian brain remains unclear due to a lack of high-resolution approaches to detect this neuropeptide with appropriate spatial and temporal resolution. Here we develop and characterize NOPLight, a genetically encoded sensor that sensitively reports changes in endogenous N/OFQ release. We characterized the affinity, pharmacological profile, spectral properties, kinetics, ligand selectivity, and potential interaction with intracellular signal transducers of NOPLight in vitro. Its functionality was established in acute brain slices by exogeneous N/OFQ application and chemogenetic induction of endogenous N/OFQ release from PNOC neurons. In vivo studies with fiber photometry enabled a direct recording of binding by N/OFQ receptor ligands, as well as the detection of natural or chemogenetically-evoked endogenous N/OFQ release within the paranigral ventral tegmental area (pnVTA). In summary, we show that NOPLight can be used to detect N/OFQ opioid peptide signal dynamics in tissue and freely-behaving animals.

Single-crystalline van der Waals layered dielectric with high dielectric constant.

The scaling of silicon-based transistors at sub-ten-nanometre technology nodes faces challenges such as interface imperfection and gate current leakage for an ultrathin silicon channel1,2. For next-generation nanoelectronics, high-mobility two-dimensional (2D) layered semiconductors with an atomic thickness and dangling-bond-free surfaces are expected as channel materials to achieve smaller channel sizes, less interfacial scattering and more efficient gate-field penetration1,2. However, further progress towards 2D electronics is hindered by factors such as the lack of a high dielectric constant (κ) dielectric with an atomically flat and dangling-bond-free surface3,4. Here, we report a facile synthesis of a single-crystalline high-κ (κ of roughly 16.5) van der Waals layered dielectric Bi2SeO5. The centimetre-scale single crystal of Bi2SeO5 can be efficiently exfoliated to an atomically flat nanosheet as large as 250 × 200 µm2 and as thin as monolayer. With these Bi2SeO5 nanosheets as dielectric and encapsulation layers, 2D materials such as Bi2O2Se, MoS2 and graphene show improved electronic performances. For example, in 2D Bi2O2Se, the quantum Hall effect is observed and the carrier mobility reaches 470,000 cm2 V-1 s-1 at 1.8 K. Our finding expands the realm of dielectric and opens up a new possibility for lowering the gate voltage and power consumption in 2D electronics and integrated circuits.

2D fin field-effect transistors integrated with epitaxial high-k gate oxide.

Precise integration of two-dimensional (2D) semiconductors and high-dielectric-constant (k) gate oxides into three-dimensional (3D) vertical-architecture arrays holds promise for developing ultrascaled transistors1-5, but has proved challenging. Here we report the epitaxial synthesis of vertically aligned arrays of 2D fin-oxide heterostructures, a new class of 3D architecture in which high-mobility 2D semiconductor fin Bi2O2Se and single-crystal high-k gate oxide Bi2SeO5 are epitaxially integrated. These 2D fin-oxide epitaxial heterostructures have atomically flat interfaces and ultrathin fin thickness down to one unit cell (1.2 nm), achieving wafer-scale, site-specific and high-density growth of mono-oriented arrays. The as-fabricated 2D fin field-effect transistors (FinFETs) based on Bi2O2Se/Bi2SeO5 epitaxial heterostructures exhibit high electron mobility (µ) up to 270 cm2 V-1 s-1, ultralow off-state current (IOFF) down to about 1 pA µm-1, high on/off current ratios (ION/IOFF) up to 108 and high on-state current (ION) up to 830 µA µm-1 at 400-nm channel length, which meet the low-power specifications projected by the International Roadmap for Devices and Systems (IRDS)6. The 2D fin-oxide epitaxial heterostructures open up new avenues for the further extension of Moore's law.

Step-Climbing Epitaxy of Layered Materials with Giant Out-of-Plane Lattice Mismatch.

Heteroepitaxy with large lattice mismatch remains a great challenge for high-quality epifilm growth. Although great efforts have been devoted to epifilm growth with an in-plane lattice mismatch, the epitaxy of 2D layered crystals on stepped substrates with a giant out-of-plane lattice mismatch is seldom reported. Here, taking the molecular-beam epitaxy of 2D semiconducting Bi2 O2 Se on 3D SrTiO3 substrates as an example, a step-climbing epitaxy growth strategy is proposed, in which the n-th (n = 1, 2, 3…) epilayer climbs the step with height difference from out-of-plane lattice mismatch and continues to grow the n+1-th epilayer. Step-climbing epitaxy can spontaneously relax and release the strain from the out-of-plane lattice mismatch, which ensures the high quality of large-area epitaxial films. Wafer-scale uniform 2D Bi2 O2 Se single-crystal films with controllable thickness can be obtained via step-climbing epitaxy. Most notably, one-unit-cell Bi2 O2 Se films (1.2 nm thick) exhibit a high Hall mobility of 180 cm2 V-1 s-1 at room temperature, which exceeds that of silicon and other 2D semiconductors with comparable thickness. As an out-of-plane lattice mismatch is generally present in the epitaxy of layered materials, the step-climbing epitaxy strategy expands the existing epitaxial growth theory and provides guidance toward the high-quality synthesis of layered materials.

Strain-Free Layered Semiconductors for 2D Transistors with On-State Current Density Exceeding 1.3 mA µm-1.

High-mobility and air-stable two-dimensional (2D) Bi2O2Se semiconductor holds promise as an alternative fast channel material for next-generation transistors. However, one of the key challenges remaining in 2D Bi2O2Se is to prepare high-quality crystals to fabricate the high-performance transistors with a high on-state current density. Here, we present the free-standing growth of strain-free 2D Bi2O2Se crystals. An ultrahigh Hall mobility of 160 000 cm2 V-1 s-1 is measured in strain-free Bi2O2Se crystals at 2 K, which enables the observation of Shubnikov-de Haas quantum oscillations and shows substantially higher (>4 times) mobility over previous in-plane 2D crystals. The fabricated 2D transistors feature an on-off current ratio of ∼106 and a record-high on-state current density of ∼1.33 mA µm-1, which is comparable to that of commercial Si and Ge n-type field-effect transistors (FETs) for similar channel length. Strain-free 2D Bi2O2Se provides a promising material platform for studying novel quantum phenomena and exploration of high-performance low-power electronics.

A genetically encoded sensor for in vivo imaging of orexin neuropeptides.

Orexins (also called hypocretins) are hypothalamic neuropeptides that carry out essential functions in the central nervous system; however, little is known about their release and range of action in vivo owing to the limited resolution of current detection technologies. Here we developed a genetically encoded orexin sensor (OxLight1) based on the engineering of circularly permutated green fluorescent protein into the human type-2 orexin receptor. In mice OxLight1 detects optogenetically evoked release of endogenous orexins in vivo with high sensitivity. Photometry recordings of OxLight1 in mice show rapid orexin release associated with spontaneous running behavior, acute stress and sleep-to-wake transitions in different brain areas. Moreover, two-photon imaging of OxLight1 reveals orexin release in layer 2/3 of the mouse somatosensory cortex during emergence from anesthesia. Thus, OxLight1 enables sensitive and direct optical detection of orexin neuropeptides with high spatiotemporal resolution in living animals.

A Bright and Colorful Future for G-Protein Coupled Receptor Sensors.

Neurochemicals have a large impact on brain states and animal behavior but are notoriously hard to detect accurately in the living brain. Recently developed genetically encoded sensors obtained from engineering a circularly permuted green fluorescent protein into G-protein coupled receptors (GPCR) provided a vital boost to neuroscience, by innovating the way we monitor neural communication. These new probes are becoming widely successful due to their flexible combination with state of the art optogenetic tools and in vivo imaging techniques, mainly fiber photometry and 2-photon microscopy, to dissect dynamic changes in brain chemicals with unprecedented spatial and temporal resolution. Here, we highlight current approaches and challenges as well as novel insights in the process of GPCR sensor development, and discuss possible future directions of the field.

A bioorthogonal system reveals antitumour immune function of pyroptosis.

Bioorthogonal chemistry capable of operating in live animals is needed to investigate biological processes such as cell death and immunity. Recent studies have identified a gasdermin family of pore-forming proteins that executes inflammasome-dependent and -independent pyroptosis1-5. Pyroptosis is proinflammatory, but its effect on antitumour immunity is unknown. Here we establish a bioorthogonal chemical system, in which a cancer-imaging probe phenylalanine trifluoroborate (Phe-BF3) that can enter cells desilylates and 'cleaves' a designed linker that contains a silyl ether. This system enabled the controlled release of a drug from an antibody-drug conjugate in mice. When combined with nanoparticle-mediated delivery, desilylation catalysed by Phe-BF3 could release a client protein-including an active gasdermin-from a nanoparticle conjugate, selectively into tumour cells in mice. We applied this bioorthogonal system to gasdermin, which revealed that pyroptosis of less than 15% of tumour cells was sufficient to clear the entire 4T1 mammary tumour graft. The tumour regression was absent in immune-deficient mice or upon T cell depletion, and was correlated with augmented antitumour immune responses. The injection of a reduced, ineffective dose of nanoparticle-conjugated gasdermin along with Phe-BF3 sensitized 4T1 tumours to anti-PD1 therapy. Our bioorthogonal system based on Phe-BF3 desilylation is therefore a powerful tool for chemical biology; our application of this system suggests that pyroptosis-induced inflammation triggers robust antitumour immunity and can synergize with checkpoint blockade.

High-Mobility Flexible Oxyselenide Thin-Film Transistors Prepared by a Solution-Assisted Method.

Two-dimensional (2D) semiconductors hold great promise in flexible electronics because of their intrinsic flexibility and high electrical performance. However, the lack of facile synthetic and subsequent device fabrication approaches of high-mobility 2D semiconducting thin films still hinders their practical applications. Here, we developed a facile, rapid, and scalable solution-assisted method for the synthesis of a high-mobility semiconducting oxyselenide (Bi2O2Se) thin film by the selenization and decomposition of a precursor solution of Bi(NO3)3·5H2O. Simply by changing the rotation speed in spin-coating of the precursor solution, the thicknesses of Bi2O2Se thin films can be precisely controlled down to few atomic layers. The as-synthesized Bi2O2Se thin film exhibited a high Hall mobility of ∼74 cm2 V-1 s-1 at room temperature, which is much superior to other 2D thin-film semiconductors such as transition metal dichalcogenides. Remarkably, flexible top-gated Bi2O2Se transistors showed excellent electrical stability under repeated electrical measurements on flat and bent substrates. Furthermore, Bi2O2Se transistor devices on muscovite substrates can be readily transferred onto flexible polyvinyl chloride (PVC) substrates with the help of thermal release tape. The integration of a high-mobility thin-film semiconductor, excellent stability, and easy transfer onto flexible substrates make Bi2O2Se a competitive candidate for future flexible electronics.