Ultra-High-k Ferroelectric BaTiO3 Perovskite in the Gate Stack for Two-Dimensional WSe2 p-Type High-Performance Transistors.

The experimental demonstration of a p-type 2D WSe2 transistor with a ferroelectric perovskite BaTiO3 gate oxide is presented. The 30 nm thick BaTiO3 gate stack shows a robust ferroelectric hysteresis with a remanent polarization of 20 µC/cm2 and further enables a capacitance equivalent thickness of 0.5 nm in the hybrid WSe2/BaTiO3 stack due to its high dielectric constant of 323. We demonstrate one of the best ON currents for perovskite gate 2D transistors in the literature. This is enabled by high-quality epitaxial growth of BaTiO3 and a single 2D layer transfer based fabrication method that is shown to be amenable to silicon platforms. This demonstration is an important milestone toward the integration of crystalline complex oxides with 2D channel materials for scaled CMOS and low-voltage ferroelectric logic applications.

Enhanced Photodetection Performance of WSe2/V2O5 Nanocomposite on Flexible Substrate: Synergistic Advantages and Improved Efficiency.

The two-dimensional (2D) chalcogenide WSe2/V2O5 composite nanostructures were synthesized using the hydrothermal method and extensively characterized with various spectroscopic techniques. X-ray diffraction analysis confirmed the hexagonal crystal structure exhibiting space symmetry of P63/mmc. Scanning electron microscopy images provided insights into the irregular and nonuniform morphology. Optical spectrum analysis indicated a band gap value of 2.01 eV for 15% WSe2/V2O5 nanostructures, as determined by the Wood and Tauc equation. Photoluminescence (PL) excitation spectra at emission wavelengths of 550 and 750 nm exhibited broad emission attributed to self-trapped excitons for V2O5 and WSe2 nanostructures. Under excitation at λexc = 365 nm, PL emission spectra displayed distinct peaks at 550 and 750 nm, demonstrating the ability to emit vivid red light. A device optimized for photoresponsivity (R) of approximately 7.80 × 10-1 A W-1 and detectivity (D) of around 8.65 × 1011 Jones, and quantum efficiency of approximately 3.42 × 10-2 A W-1 were achieved at a wavelength of 390 nm while using a lamination sheet as a substrate. These findings underscore the capability of devices for efficient photoconversion at specified wavelengths, indicating potential applications in sensing, imaging, and optical communication. The photoresponsivity of the device remained stable at 3.38 × 10-3 A W-1 at 0° and 3.09 × 10-3 A W-1 at 55° bending angle. This indicates the resilience of device to mechanical strain, making it ideal for flexible and wearable sensor applications. The structural, morphological, and optical characterizations confirm the suitability of luminescent WSe2/V2O5 chalcogenide for practical optoelectronic applications, especially in display technologies.

Compact Physical Implementation of Spiking Neural Network Using Ambipolar WSe2 n-Type/p-Type Ferroelectric Field-Effect Transistor.

Spiking neural networks (SNNs) are attracting increasing interests for their ability to emulate biological processes, offering energy-efficient computation and event-driven processing. Currently, no devices are known to combine both neuronal and synaptic functions. This study presents an experimental demonstration of an ambipolar WSe2 n-type/p-type ferroelectric field-effect transistor (n/p-FeFET) integrated with ferroelectric Hf0.5Zr0.5O2 (HZO) to achieve both volatile and nonvolatile properties in a single device. The nonvolatile n-FeFET, driven by the stable ferroelectric properties of HZO, exhibits highly linear synaptic behavior. In contrast, the volatile p-FeFET, influenced by electron self-compensation in the ambipolar WSe2, enables self-resetting leaky-integrate-and-fire neurons. Integrating neuronal and synaptic functions in the same device allows for compact neuromorphic computing applications. Additionally, simulations of SNNs using experimentally calibrated synaptic and neuronal models achieved a 93.8% accuracy in MNIST digit recognition. This innovative approach advances the development of SNNs with high biomimetic fidelity and reduced hardware costs.

Reconfigurable Homojunction Phototransistor for Near-Zero Power Consumption Artificial Biomimetic Retina Function.

Semiconductor photodetectors integrating preliminary signal-processing functions play a vital role in artificial biomimetic retina systems. Herein, we propose a tungsten diselenide (WSe2) phototransistor with a dual-layer gate dielectric and an asymmetric graphene insert structure. This phototransistor exhibits a bidirectional self-powered photocurrent by controlling the gate voltage via the formation of reconfigurable p+-p and n-p homojunctions in the channel from the asymmetric graphene insert. At the same time, the nonvolatile electron and hole stored in the dual-layer gate dielectric are generated using a temporary gate voltage, which can replace the gate voltage to regulate the channel charge. Moreover, the photocurrent shows a linear relation with the temporary programming gate voltage. The phototransistor exhibits a rectification ratio of >4 orders of magnitude without the gate voltage, indicating its significant capability to operate in a fully self-powered mode with near-zero power consumption. Based on the device characteristics, we successfully simulate the biological functions of the photoreceptor layer and bipolar cell layer in the retinal receptive field. The identification of the object motion direction in the receptive field can be realized by integrating three programmable devices on the chip. Furthermore, edge enhancement of the image is achieved by independently modulating the light response of each pixel in the sensor by varying the programming gate voltage. This study will promote the developing progress of future artificial biomimetic retina systems.

Unprecedented Hole Concentration of NiSe2 Electrodes Leading to Hole Degeneration of Entire WSe2 Channels.

Semimetal electrodes for 2D semiconductors have been extensively studied; however, research on p-type semimetals has been limited due to the scarcity of materials that satisfy both high work functions and low resistances. In response, we investigated the behavior of NiSe2 as an electrode. Utilizing a novel co-evaporation method that suppresses oxidation and contamination, we synthesized NiSe2 demonstrating a high work function of 5.53 eV, a low resistance of 5.81 × 10-5 Ω cm, and a record hole concentration exceeding 1023 cm-3. We confirmed that when WSe2 comes into contact with NiSe2, the Fermi level of WSe2 falls below the work function of NiSe2, leading to complete hole degeneration of the channel. This unusual Fermi level alignment correlates with the high hole concentration in NiSe2 and the maximum energy level of its hole pockets. Our research provides new insights into how an electrode's hole concentration affects channel behavior.

Simulating and Implementing Broadband van der Waals Artificial Visual Synapses Based on Photoconductivity and Pyroconductivity Mechanisms.

With advancements in artificial neural networks and information processing technology, a variety of neuromorphic synaptic devices have been proposed to emulate human sensory systems, with vision being a crucial information source. Moreover, as practical applications become increasingly complex, the need for multifunctional visual synapses to expand the application range becomes urgent. This study introduces a MoS2/WSe2 van der Waals (vdW) heterojunction and utilizes it to replicate artificial visual synapses by harnessing the cooperative effect of photoconductivity and pyroconductivity mechanisms. By adjusting the optical power, pulse width, and pulse number of the optical stimulus, the heterojunction effectively simulates synaptic properties. Under the combined action of an external electric field and the built-in electric field (Ebi), the heterojunction exhibits broadband synaptic properties in the visible to near-infrared spectrum (405-1550 nm) while consuming low power of 0.3-1.1 pJ per spike. The heterojunction can detect ultraweak optical signals at 660 nm with an optical power intensity of 14 µW/cm2, displaying a high specific detectivity (D*) of 3.98 × 1011 Jones. Furthermore, at 405, 808, 1064, and 1550 nm, the D* of the heterojunction is 4.16 × 1011, 3.61 × 109, 4.96 × 107, and 1.64 × 107 Jones, respectively. Visual synaptic devices based on the MoS2/WSe2 vdW heterojunction hold significant promise for the future development of integrated sensing and memory processing devices.

Biocompatible WSe2@BSA Dots with Merged Catalyst and Coreactant for Efficient Electrochemiluminescence.

Electrochemiluminescence (ECL) is a powerful tool for clinical diagnosis due to its exceptional sensitivity. However, the standard tripropylamine (TPrA) coreactant for Ru(bpy)3Cl2, the most widely studied and used ECL system, is highly toxic. Despite extensive research on alternative coreactants, they often fall short in poor efficiency. From a reaction kinetics perspective, accelerating electrooxidation rate of Ru(bpy)3Cl2 is an essential way to compensate the efficiency limitation of coreactants, but is rarely reported. Here, a hybrid electrocatalyst@coreactant dots for the ECL of Ru(bpy)3Cl2 is reported. The as-prepared WSe2@bovine serum albumin (WSe2@BSA) dots is biocompatible, and demonstrate dual functions, i.e., the BSA shell works as a coreactant, meanwhile, the WSe2 core effectively catalyzes Ru(bpy)3Cl2 oxidation. As a result, WSe2@BSA dots exhibit an exceptionally high efficiency comparable to TPrA for the ECL of Ru(bpy)3Cl2. In addition, the procedure for synthesizing WSe2@BSA dots is facile (room temperature, atmospheric conditions), rapid (5 min), and scalable (for millions of bioassays). A biosensor utilizing WSe2@BSA dots shows promise for highly sensitive detecting glypican-3 in clinical liver cancer serum samples, especially for alpha-fetoprotein-negative patients. This work opens a new avenue for developing a highly efficient ECL system for biosensing and clinical diagnosis.

Achieving a Noise Limit with a Few-layer WSe2 Avalanche Photodetector at Room Temperature.

We engineered a two-dimensional Pt/WSe2/Ni avalanche photodetector (APD) optimized for ultraweak signal detection at room temperature. By fine-tuning the work functions, we achieved an ultralow dark current of 10-14 A under small bias, with a noise equivalent power (NEP) of 8.09 fW/Hz1/2. This performance is driven by effective dark barrier blocking and a record-long electron mean free path (123 nm) in intrinsic WSe2, minimizing dark carrier replenishment and suppressing noise under an ultralow electric field. Our APD exhibits a high gain of 5 × 105 at a modulation frequency of 20 kHz, effectively balancing gain and bandwidth, a common challenge in traditional photovoltaic-based APDs. By addressing the typical challenges of high noise and low gain and minimizing dependence on high electric fields, this work highlights the potential of 2D materials in developing efficient, low-power, and ultrasensitive photodetections.

Simultaneously Enhancing Brightness and Purity of WSe2 Single Photon Emitter Using High-Aspect-Ratio Nanopillar Array on Metal.

A monolayer semiconductor transferred on nanopillar arrays provides site-controlled, on-chip single photon emission, which is a scalable light source platform for quantum technologies. However, the brightness of these emitters reported to date often falls short of the perceived requirement for such applications. Also, the single photon purity usually degrades as the brightness increases. Hence, there is a need for a design methodology to achieve an enhanced emission rate while maintaining high single photon purity. By using WSe2 on high-aspect-ratio (∼3, at least 2-fold higher than previous reports) nanopillar arrays, here we demonstrate >10 MHz single photon emission rate in the 770-800 nm band that is compatible with quantum memory and repeater networks (Rb-87-D1/D2 lines) and satellite quantum communication. The emitters exhibit excellent purity (even at high emission rates) and improved out-coupling due to the use of a gold back reflector that quenches the emission away from the nanopillar.

Heterostrain-Induced Zeeman-like Splitting in h-BN-Encapsulated Bilayer WSe2.

Heterostrain is predicted to induce exceptionally rich physics in atomically thin two-dimensional structures by modifying the symmetry and optical selection rules. In this work, we introduce heterostrain into WSe2 bilayers by combining h-BN encapsulation and high-temperature vacuum annealing. Nonvolatile heterostrain gives rise to a Zeeman-like splitting associated with the elliptically polarized optical emission of interlayer K-K excitons. Further manipulation of the interlayer exciton emission in an external magnetic field reveals that the Zeeman-like splitting cannot be eliminated even in a magnetic field of up to ±6 T. We propose a microscopic picture with respect to the layer and valley pseudospin to interpret the results. Our findings imply an intriguing way to encode binary information with the layer pseudospin enabled by the heterostrain and open a venue for manipulating the layer pseudospin with heterostrain engineering, optical pseudospin injection, and an external magnetic field.

Improved Efficiency in WSe2 Solar Cells Using Amorphous InOx Heterocontacts.

van der Waals (vdW) layered materials have been shown to have excellent optoelectronic properties relevant to photovoltaics. Despite their promise, the demonstrated efficiencies of vdW material solar cells remain low and are seldom supported by statistics or spectral quantum efficiency analysis. In this study, we utilize a p-type WSe2 absorber, forming a solar cell with a transparent front InOx electron contact, and a rear Pd reflector/hole contact. We fabricate multiple devices providing statistics for 10 devices with an average 1 sun conversion efficiency above 5%, among which a champion efficiency of 6.37% is achieved. This is the highest AM 1.5G 1 sun efficiency reported for a vdW material solar cell, with a current density supported by external quantum efficiency analysis. This cell is also shown to have near unity quantum efficiency around λ = 600 nm. This work provides support to vdW materials being considered as serious candidates for future thin-film solar cells.

Enhanced Performance of a Self-Powered Au/WSe2/Ta2NiS5/Au Heterojunction by the Interfacial Pyro-phototronic Effect.

The growing need for wearable electronics and self-powered electronic devices has driven the successful development of self-powered two-dimensional (2D) photodetectors using the photovoltaic effect of Schottky and p-n junctions. However, there is an urgent need to develop multifunctional photodetectors capable of harvesting energy from different sources to overcome their limitations in efficiency and cost. While the pyro-phototronic effect has been shown to effectively influence optoelectronic processes in heterojunctions, the number of reported two-dimensional heterojunctions exhibiting interfacial pyroelectricity is still limited, and the responsivity and detectivity based on such heterojunctions tend to be low. In this study, a photodetector based on an Au/WSe2/Ta2NiS5/Au heterojunction was designed and fabricated. By harnessing the interfacial pyro-phototronic effect arising from the built-in electric fields at the Au/WSe2 Schottky junction and WSe2/Ta2NiS5 heterojunction, the photodetector exhibits a broadband response range of 405-1064 nm, with approximately 12 times enhancement in output current compared to solely relying on the photovoltaic effect. Under 660 nm light irradiation, the self-powered photodetector exhibits a responsivity of 121 mA/W, an external quantum efficiency of 22.64%, and a specific detectivity of 2 × 1012 Jones. Notably, its pyroelectric coefficient exceeds 8 × 103 µC·m-2·K-1. These findings pave the way for effectively detecting weak light and temperature variation while presenting a new strategy for developing high-performance photodetectors utilizing the interfacial pyro-phototronic effect.

Finite-Area Membrane Metasurfaces for Enhancing Light-Matter Coupling in Monolayer Transition Metal Dichalcogenides.

Transition metal dichalcogenides (TMDCs) are at the forefront of nanophotonics because of their exceptional optical characteristics. The 2D architecture of TMDCs facilitates efficient light absorption and emission, holding tantalizing potential for next-generation nanophotonic and quantum devices. Yet, the atomic thinness limits their interaction volume with light, affecting light-matter interaction and quantum efficiency. The light coupling in the 2D layered TMDCs can be enhanced by integration with photonic structure, and the metasurfaces supporting bound states in the continuum (BICs) offer strong confinement of optical fields, ideal for coupling with 2D TMDCs. Here, we demonstrate enhanced light-matter coupling by integrating TMDC monolayers, including WSe2 and MoS2, with a finite-area membrane metasurface, leading to amplified and high-quality-factor (Q-factor) spontaneous emission from quasi-BIC-coupled TMDC monolayers. The high-Q-factor emission extends over an area with a scale of a few micrometers while maintaining the high-Q factor across the emission area. Notably, the suspended finite-area membrane metasurface, which is freestanding in air rather than positioned atop a substrate, minimizes radiation loss while enhancing light-matter interaction in the TMDC monolayer. Furthermore, the predominantly in-plane dipole orientation of excitons within TMDC monolayers results in distinctive enhancement behaviors for emission, contingent on the excitation power, when coupled with quasi-BIC modes exhibiting TE and TM resonances. This work introduces a nanophotonic platform for robust coupling of membrane metasurfaces with 2D materials, offering possibilities for developing 2D material-based nanophotonic and quantum devices.

WSe2 Negative Capacitance Field-Effect Transistor for Biosensing Applications.

Field-effect transistor (FET) biosensors based on two-dimensional (2D) materials are highly sought after for their high sensitivity, label-free detection, fast response, and ease of on-chip integration. However, the subthreshold swing (SS) of FETs is constrained by the Boltzmann limit and cannot fall below 60 mV/dec, hindering sensor sensitivity enhancement. Additionally, the gate-leakage current of 2D material biosensors in liquid environments significantly increases, adversely affecting the detection accuracy and stability. Based on the principle of negative capacitance, this paper presents for the first time a two-dimensional material WSe2 negative capacitance field-effect transistor (NCFET) with a minimum subthreshold swing of 56 mV/dec in aqueous solution. The NCFET shows a significantly improved biosensor function. The pH detection sensitivity of the NCFET biosensor reaches 994 pH-1, nearly an order of magnitude higher than that of the traditional two-dimensional WSe2 FET biosensor. The Al2O3/HfZrO (HZO) bilayer dielectric in the NCFET not only contributes to negative capacitance characteristics in solution but also significantly reduces the leakage in solution. Utilizing an enzyme catalysis method, the WSe2 NCFET biosensor demonstrates a specific detection of glucose molecules, achieving a high sensitivity of 4800 A/A in a 5 mM glucose solution and a low detection limit (10-9 M). Further experiments also exhibit the ability of the biosensor to detect glucose in sweat.

High-Capacity and Ultra-Long-Life Mg-Metal Batteries Enabled by Intercalation-Conversion Hybrid Cathode Materials.

The advancement of rechargeable Mg-metal batteries (RMBs) is severely impeded by the lack of suitable cathode materials. Despite the good cyclic stability of intercalation-type compounds, their specific capacity is relatively low. Conversely, the conversion-type cathodes can deliver a higher capacity but often suffer from poor cycling reversibility and stability. Herein, a WSe2/Se intercalation-conversion hybrid material with elemental Se uniformly distributed into WSe2 nanosheets is fabricated via a simple solvothermal method for high-performance RMBs. The uniformly introduced Se confined in WSe2 nanosheets can not only efficiently improve the conductivity of the hybrid cathodes, facilitating the fast electron transport and ion diffusion, but also provide additional specific capacity. Besides, the WSe2 can effectively inhibit the detrimental Se dissolution and polyselenide shuttle, thereby activating the activity of Se and improving its utilization. Consequently, the synergy of intercalation and conversion mechanisms endows WSe2/Se hybrids with superior reversible capacity of 252 mAh g-1 at 0.1 A g-1 and ultra-long cyclability of up to 5000 cycles at 2.0 A g-1 with capacity retention of 78.1%. This work demonstrates the feasibility of the strategy by integrating intercalation and conversion mechanisms for developing high-performance cathode materials for RMBs.

Helicity-Resolved Vibrational Coupling in Twist WS2/WSe2 Heterostructures.

Helicity-resolved Raman spectra can provide an intricate view into lattice structural details. Through the analysis of peak positions, intensities, and circular polarized Raman signals, a wealth of information about chiral structure arrangement within the moiré superlattice, interlayer interaction strength, polarizability change in chemical bond, and beyond can be unveiled. However, the relationship between the circular polarization of high-frequency Raman and twist angle is still not clear. Here, we utilize helicity-resolved Raman spectroscopy to explore the interlayer interactions and the effect of the moiré superlattice in WS2/WSe2 heterostructures. For the out-of-plane Raman mode A1g of WS2 (A1g and 1E2g of WSe2), its intensity is significantly enhanced (suppressed) in WS2/WSe2 heterostructures when θ is less than 10° or greater than 50°. This observation could be attributed to the large polarizability changes in both W-S and W-Se covalent bonds. The circular polarization of 2LA(M) in WSe2 of the WS2/WSe2 heterostructure (θ < 10° or θ > 50°) is significantly enhanced compared to that of 2LA(M) in the monolayer WSe2. We deduce that the circular polarization of the Raman mode correlates with the proportion of high-symmetry area within a supercell of the moiré lattice. Our findings improve the understanding of twist-angle-modulated Raman modes in TMD heterostructures.

Rolling up 2D WSe2 Nanosheets to 1D Anisotropic Nanoscrolls for Polarization-Sensitive Photodetectors.

The intrinsic low-symmetry crystal structures or external geometries of low-dimensional materials are crucial for polarization-sensitive photodetection. However, these inherently anisotropic materials are limited in variety, and their anisotropy is confined to specific crystal directions. Transforming 2D semiconductors, such as WSe2, from isotropic 2D nanosheets into anisotropic 1D nanoscrolls expands their application in polarization photodetection. Despite this considerable potential, research on polarization photodetection based on nanoscrolls remains scarce. Here, the uniform crystalline orientation of WSe2 nanoscrolls is achieved conveniently and efficiently by applying ethanol droplets to vapor deposition-grown bilayer WSe2 nanosheets. Angle-resolved polarized Raman spectroscopy of WSe2 nanoscrolls demonstrates vibrational anisotropy. Photodetectors based on these nanoscrolls show competitive overall performance with a broadband detection range from 405 to 808 nm, a competitive on/off ratio of ≈900, a high detectivity of 3.4 × 108 Jones, and a fast response speed of ≈30 ms. Additionally, WSe2 nanoscroll-based photodetectors exhibit strong polarization-sensitive detection with a maximum dichroic ratio of 1.5. More interestingly, due to high photosensitivity, the WSe2 nanoscroll detectors can easily record sequential puppy images. This work reveals the potential of WSe2 nanoscrolls as excellent polarization-sensitive photodetectors and provides new insights into the development of high-performance optoelectronic devices.

An ultrasensitive dual-mode stagey for 17ß-estradiol assay: Photoelectrochemical and colorimetric biosensor based on a WSe2/TiO2-modified electrode coupled with nucleic acid amplification.

BACKGROUND: The abuse of 17ß-estradiol(E2) has aroused wide concern in environmental and biomedical fields, which severely affects the endocrine function of human and animals. Therefore, an ultrasensitive and accurate assay of E2 is critically important. Traditional chromatography or immunoassay techniques exhibited good sensitivity and selectivity, but expensive instruments and antibodies may pose cost and stability issues, as well as difficulties in meeting on-site detection requirements. Ultrasensitive, reliable, and on-site detection of E2 at trace level remains a challenge. Hence, developing a simple, ultrasensitive assay to simultaneously achieve accurate detection and rapid visual analysis of E2 is extremely crucial. RESULTS: We developed a versatile dual-mode photoelectrochemical (PEC) and colorimetric biosensor based on isothermal nucleic acid amplification strategy for the ultrasensitive and accurate detection of E2. The method modified titanium dioxide (TiO2) with tungsten selenide (WSe2) nanoflowers to synthesize WSe2/TiO2 heterostructures as a substrate for signal amplification and nanoprobe modification. Isothermal nucleic acid amplification strategy has been proven to be a powerful tool for strong signal amplification. The presence of a target triggered the nucleic acid amplification reaction, and produced a large amount of tDNA that competed with G-quadruplex immobilized on the electrode surface. The remaining G-quadruplex/hemin catalyzed the 4-chloro-1-naphthol (4-CN) to form biocatalytic precipitation (BCP) and ABTS-H2O2 chromogenic reaction, thus, the dual-mode platform was capable of achieving PEC-colorimetric ultrasensitive detection based on the catalytic activity of G-quadruplex/hemin DNAzyme. Within optimal conditions, the dual-mode biosensor exhibited a remarkable detection limit as low as 0.026 pM. SIGNIFICANCE: Benefiting from the superior performance of WSe2/TiO2 and the power signal amplification of isothermal nucleic acid amplification strategy, this aptasensor achieved the ultrasensitive detection of E2. The independent transmission paths of photoelectrochemical and colorimetric provide mutual support and flexible switching, significantly enhancing the overall sensitivity and accuracy of the detection strategy, which can meet the needs for E2 precise quantification and rapid on-site detection.

Imaging Negative Charge around Single Vanadium Dopant Atoms in Monolayer Tungsten Diselenide Using 4D Scanning Transmission Electron Microscopy.

There has been extensive activity exploring the doping of semiconducting two-dimensional (2D) transition metal dichalcogenides in order to tune their electronic and magnetic properties. The outcome of doping depends on various factors, including the intrinsic properties of the host material, the nature of the dopants used, their spatial distribution, as well as their interactions with other types of defects. A thorough atomic-level analysis is essential to fully understand these mechanisms. In this work, the vanadium-doped WSe2 monolayer grown by molecular beam epitaxy is investigated using four-dimensional scanning transmission electron microscopy (4D-STEM). Through center-of-mass-based reconstruction, atomic-scale maps are produced, allowing the visualization of both the electric field and the electrostatic potential around individual V atoms. To provide quantitative insights, these results are successfully compared to multislice image simulations based on ab initio calculations, accounting for lens aberrations. Finally, a negative charge around the V dopants is detected as a drop in the electrostatic potential, unambiguously demonstrating that 4D-STEM can be used to detect and to accurately analyze single-dopant charge states in semiconducting 2D materials.

Edge-Passivated Monolayer WSe2 Nanoribbon Transistors.

The ongoing reduction in transistor sizes drives advancements in information technology. However, as transistors shrink to the nanometer scale, surface and edge states begin to constrain their performance. 2D semiconductors like transition metal dichalcogenides (TMDs) have dangling-bond-free surfaces, hence achieving minimal surface states. Nonetheless, edge state disorder still limits the performance of width-scaled 2D transistors. This work demonstrates a facile edge passivation method to enhance the electrical properties of monolayer WSe2 nanoribbons, by combining scanning transmission electron microscopy, optical spectroscopy, and field-effect transistor (FET) transport measurements. Monolayer WSe2 nanoribbons are passivated with amorphous WOxSey at the edges, which is achieved using nanolithography and a controlled remote O2 plasma process. The same nanoribbons, with and without edge passivation are sequentially fabricated and measured. The passivated-edge nanoribbon FETs exhibit 10 ± 6 times higher field-effect mobility than the open-edge nanoribbon FETs, which are characterized with dangling bonds at the edges. WOxSey edge passivation minimizes edge disorder and enhances the material quality of WSe2 nanoribbons. Owing to its simplicity and effectiveness, oxidation-based edge passivation could become a turnkey manufacturing solution for TMD nanoribbons in beyond-silicon electronics and optoelectronics.