Boosting Interfacial Electron Transfer and CO2 Enrichment on ZIF-8/ZnTe for Selective Photoelectrochemical Reduction of CO2 to CO.

Artificial photosynthesis is an effective way of converting CO2 into fuel and high value-added chemicals. However, the sluggish interfacial electron transfer and adsorption of CO2 at the catalyst surface strongly hamper the activity and selectivity of CO2 reduction. Here, we report a photocathode attaching zeolitic imidazolate framework-8 (ZIF-8) onto a ZnTe surface to mimic an aquatic leaf featuring stoma and chlorophyll for efficient photoelectrochemical conversion of CO2 into CO. ZIF-8 possessing high CO2 adsorption capacity and diffusivity has been selected to enrich CO2 into nanocages and provide a large number of catalytic active sites. ZnTe with high light-absorption capacity serves as a light-absorbing layer. CO2 molecules are collected in large nanocages of ZIF-8 and delivered to the ZnTe surface. As evidenced by scanning electrochemical microscopy, the interface can effectively boost interfacial electron transfer kinetics. The ZIF-8/ZnTe photocathode with unsaturated Zn-Nx sites exhibits a high Faradaic efficiency for CO production of 92.9% and a large photocurrent of 6.67 mA·cm-2 at -2.48 V (vs Fc/Fc+) in a nonaqueous electrolyte at AM 1.5G solar irradiation (100 mW·cm-2).

DC current-voltage and impedance spectroscopy characterization of nCdS/pZnTe HJ.

This paper describes the electrical and dielectric behavior of the nCdS/pZnTe HJ by current-voltage, capacitance-voltage characteristics, and impedance spectroscopy in a temperature interval 220-350 K. A microcrystalline p-ZnTe layer and n-CdS were grown on glass/ZnO substrate by closed space sublimation method. As frontal contact to CdS, the transparent ZnO and as a back contact to ZnTe, silver conductive paste (Ag) treated at 50 °C in vacuum were used. The current-voltage results of nCdS/pZnTe HJ show a rectifying behavior. The junction ideality factor, barrier height, and series resistance values were extracted from the rectifying curves at different temperatures. The built-in voltage, carrier concentration and depletion width were obtained from the capacitance-voltage measurements. Analysis of the J-V-T and C-V-T characteristics shows that the thermionic emission and recombination current flow mechanisms dominate in the nCdS/pZnTe HJ. The dielectric study reveals that the experimental values of the AC conductivity, dielectric constant, dielectric loss, the imaginary part of the electric modulus are found to be very sensitive to frequency and temperature. The dielectric constant and dielectric loss are observed to be high at the low frequency region. The increase in the values of electric modulus with the frequency implies an increase in the interfacial polarization at the interface of nCdS/pZnTe HJ. Jonscher's universal power law shows that with increasing frequency, AC conductivity increased. The results conductivity show that the ionic conductivity and interfacial polarization are the main parameters affecting the dielectric properties of the device when the temperature changes.

Photon-carrier-spin coupling in a one-dimensional Ni(II)-doped ZnTe nanostructure.

Transition metal (TM) ion doping in II-VI semiconductors can produce exciton magnetic polarons (EMPs) and localized EMPs containing longitudinal optical (LO) phonon coupling, which will be discussed in this paper. TM ion doping in II-VI semiconductors for a dilute magnetic semiconductor show emission via magnetic polarons (MPs) together with hot carrier effects that need to be understood via its optical properties. The high excitation power that is responsible for hot carrier effects suppresses the charge trapping effect in low exciton binding energy (8.12 meV) semiconductors, even at room temperature (RT). The large polaron radius exhibits strong interaction between the carrier and MP, resulting in anharmonicity effects, in which the side-band energy overtone to LO phonons. The photon-like polaritons exhibit polarized spin interactions with LO phonons that show strong spin-phonon polaritons at RT. The temperature-dependent photoluminescence spectra of Ni-doped ZnTe show free excitons (FX) and FXs interacting with 2LO phonon-spin interactions, corresponding to3T1(3F) →1T1(1G) and EMP peaks with ferromagnetically coupled Ni ions at3T1(3F) →1E(1G). In addition, other d-d transitions of single Ni ions (600-900 nm) appear at the low-energy side. RT energy shifts of 14-38 meV are observed due to localized states with density-of-states tails extending far into the bandgap-related spin-induced localization at the valence band. These results show spin-spin magnetic coupling and spin-phonon interactions at RT that open up a more realistic new horizon of optically controlled dilute magnetic semiconductor applications.

Effect of phonon anharmonicity on thermal conductivity of ZnTe Thin films.

The ZnTe thin film is a potential material for optoelectronic devices in extreme temperature and radiation environments. In this report, the thermal conductivity of ZnTe films is measured non-invasively using the micro-Raman method and correlated with the phonon anharmonic effect. The evolution of crystalline ZnTe thin films from Te/ZnO bilayer by thermal annealing at 450 ∘C has been observed above the melting point of Te, which is confirmed from x-ray diffraction and high-resolution transmission electron microscopy. The ZnTe thin films illustrate three longitudinal phonon modes with higher harmonics of nLO (n= 3) at room temperature. Temperature-dependent Raman spectra in the range of 93-303 K are used to analyze the phonon anharmonicity from Raman shift, FWHM, and Phonon lifetime of the thin films. The Balkanski model is used to fit the anharmonicity-induced phonon frequency shift of nLO modes as a function of temperature, taking into account three- and four-phonon interactions. The intensity ratio of the I2LO/I1LOand I3LO/I2LOprovide information about the electron-phonon coupling strength, which is influenced by the anharmonic effect. The laser power-dependent Raman spectra are used to determine the thermal conductivity of the ZnTe films, which is found to be approximately 9.68 Wm-1K-1, remains relatively constant for all nLO modes, indicating that multi-phonon scattering process. The correlation between thermal conductivity and phonon anharmonicity can pave the way for understanding the phonon scattering process in ZnTe thin films for high-performance optoelectronic device applications in harsh conditions.

Zinc Doping Induces Enhanced Thermoelectric Performance of Solvothermal SnTe.

The creation of hierarchical nanostructures can effectively strengthen phonon scattering to reduce lattice thermal conductivity for improving thermoelectric properties in inorganic solids. Here, we use Zn doping to induce a remarkable reduction in the lattice thermal conductivity in SnTe, approaching the theoretical minimum limit. Microstructure analysis reveals that ZnTe nanoprecipitates can embed within SnTe grains beyond the solubility limit of Zn in the Zn alloyed SnTe. These nanoprecipitates result in a substantial decrease of the lattice thermal conductivity in SnTe, leading to an ultralow lattice thermal conductivity of 0.50 W m-1 K-1 at 773 K and a peak ZT of ~0.48 at 773 K, marking an approximately 45 % enhancement compared to pristine SnTe. This study underscores the effectiveness of incorporating ZnTe nanoprecipitates in boosting the thermoelectric performance of SnTe-based materials.

Heterogenization-Activated Zinc Telluride via Rectifying Interfacial Contact to Afford Synergistic Confinement-Adsorption-Catalysis for High-Performance Lithium-Sulfur Batteries.

The notorious shuttle effect and sluggish conversion kinetics of intermediate polysulfides (Li2S4, Li2S6, Li2S8) are severely hindered the large-scale development of Lithium-sulfur (Li-S) batteries. Rectifying interface effect has been a solution to regulate the electron distribution of catalysts via interfacial charge exchange. Herein, a ZnTe-ZnO heterojunction encapsulated in nitrogen-doped hierarchical porous carbon (ZnTe-O@NC) derived from metal-organic framework is fabricated. Theoretical calculations and experiments prove that the built-in electric field constructed at ZnTe-ZnO heterojunction via the rectifying interface contact, thus promoting the charge transfer as well as enhancing adsorption and conversion kinetics toward polysulfides, thereby stimulating the catalytic activity of the ZnTe. Meanwhile, the nitrogen-doped hierarchical porous carbon acts as confinement substrate also enables fast electrons/ions transport, combining with ZnTe-ZnO heterojunction realize a synergistic confinement-adsorption-catalysis toward polysulfides. As a result, the Li-S batteries with S/ZnTe-O@NC electrodes exhibit an impressive rate capability (639.7 mAh g-1 at 3 C) and cycling performance (70% capacity retention at 1 C over 500 cycles). Even with a high sulfur loading, it still delivers a superior electrochemical performance. This work provides a novel perspective on designing highly catalytic materials to achieve synergistic confinement-adsorption-catalysis for high-performance Li-S batteries.

Influence of substrate temperature on the properties of ZnTe:Cu films prepared by a magnetron co-sputtering method.

Copper-doped Zinc Tellurium (ZnTe:Cu) films were deposited on borosilicate glass using magnetron co-sputtering technique. The influence of the substrate temperature on the structural, morphological, optical and electrical properties of ZnTe:Cu films was investigated by X-ray diffraction (XRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), UV-Vis spectrophotometer and Hall effect measurement system. The results indicate that substrate temperature significantly affects the properties of the ZnTe:Cu films. When the substrate temperature increases from room temperature to 600 °C, the (111)-preferred orientation of ZnTe:Cu films is gradually replaced by the (220)-preferred orientation. At high substrate temperatures (≥500 °C), the CuxTe phase appears in the ZnTe:Cu films, resulting in higher carrier concentration (>1019 cm-3) and lower resistivity (<10-2 Ω cm) of the prepared films.

A Bifunctional Optoelectronic Device for Photodetection and Photoluminescence Switching Based on Graphene/ZnTe/Graphene van der Waals Heterostructures.

Controlling the dynamic processes, such as generation, separation, transport, and recombination, of photoexcited carriers in a semiconductor is foundational in the design of various devices for optoelectronic applications. One may imagine that if different processes can be manipulated in one single device and thus generate useful signals, a multifunctional device can be realized, and the toolbox for integrated optoelectronics will be expanded. Here, we revealed that in a graphene/ZnTe/graphene van der Waals (vdW) heterostructure, the carriers can be generated by illumination from visible to infrared frequencies, and thus, the detected spectrum range extends to the communication band, well beyond the band gap of ZnTe (2.26 eV). More importantly, we are able to control the competition between separation and recombination of the photoexcited carriers by an electric bias along the thickness-defined channel of the ZnTe flake: as the bias increases, the photodetecting performance, e.g. response speed and photocurrent, are improved due to the efficient separation of carriers; synchronously, the photoluminescence (PL) intensity decreases and even switches off due to the suppressed recombination process. The ZnTe-based vdW heterostructure device thus integrates both photodetection and PL switching functions by manipulating the generation, separation, transport, and recombination of carriers, which may inspire the design of the next generation of miniaturized optoelectronic devices based on the vdW heterostructures made by various thin flakes.

MoO2 Nanoclusters Embedded in Hierarchical Nitrogen Doped Carbon Nanoflower as Electrocatalytic Mediators in Aqueous Zinc-Tellurium Batteries: Enhancing Electrochemical Kinetics of Tellurium Redox Reaction.

Aqueous zinc-ion batteries (AZIBs) are considered to be one of the most promising devices for large-scale energy storage systems owing to their high theoretical capacity, environmental friendliness, and safety. However, the ionic intercalation or surface redox mechanisms in conventional cathode materials generally result in unsatisfactory capacities. Conversion-type aqueous zinc-tellurium (Zn-Te) batteries have recently gained widespread attention owing to their high theoretical specific capacities. However, it remains an enormous challenge to improve the slow kinetics of the aqueous Zn-Te batteries. Here, MoO2 nanoclusters embedded in hierarchical nitrogen-doped carbon nanoflower (MoO2 /NC) hosts are successfully synthesized and loaded with Te in aqueous Zn-Te batteries. Benefitting from the highly dispersed MoO2 nanoclusters and hierarchical nanoflower structure with a large specific surface area, the electrochemical kinetics of the Te redox reaction are significantly improved. As a result, the Te-MoO2 /NC electrode exhibits superior cycling stability and a high specific capacity of 493 mAh g-1 at 0.1 A g-1 . Meanwhile, the conversion mechanism is systematically explored using a variety of ex situ characterization methods. Therefore, this study provides a novel approach for enhancing the kinetics of the Te redox reaction in aqueous Zn-Te batteries.

Various Types of Light Guides for Use in Lossy Mode Resonance-Based Sensors.

A comparative study of figure-of-merit fiber sensors of the mass concentration of NaCl solutions based on single-mode and multi-mode fibers was carried out. Lossy mode resonance is realized on chemically thinned sections of optical fibers to various diameters (from 26 to 100 µm) coated with ZnTe. Thin-film coatings were applied using the method of metalorganic chemical vapor deposition (MOCVD). Samples of single-mode and multi-mode fiber sensors were created in such a way that the depth and spectral position of resonances in aqueous NaCl solutions coincided. Sensors implemented on a single-mode fiber have a higher sensitivity (5930 nm/refractive index unit (RIU)) compared to those on a multi-mode fiber (4860 nm/RIU) and a smaller half-width of the resonance in the transmission spectrum. According to the results of experiments, figure-of-merit sensors are in the range of refractive indices of 1.33-1.35 for: multi-mode fiber-25 RIU-1, single-mode fiber-75 RIU-1. The sensitivity of the resulting sensors depends on the surface roughness of the ZnTe coating. The roughness of films synthesized on a single-mode fiber is four times higher than this parameter for a coating on a multi-mode fiber. For the first time, in the transmission spectrum during the synthesis of a thin-film coating on a multi-mode fiber, the possibility of separating the first nine orders of resonances into electric and magnetic transverse components has been demonstrated. The characteristics of sensors with the operating wavelength range in the visible (500-750 nm) and infrared (1350-1550 nm) regions of the spectrum are compared. The characteristics of multi-mode lossy mode resonance sensors are demonstrated, which make them more promising for use in applied devices than for laboratory research.

Resulting Effect of the p-Type of ZnTe: Cu Thin Films of the Intermediate Layer in Heterojunction Solar Cells: Structural, Optical, and Electrical Characteristics.

The microstructural, electrical, and optical properties of Cu-doped and undoped ZnTe thin films grown on glass substrates are covered in this article. To determine the chemical makeup of these materials, both energy-dispersive X-ray (EDAX) spectroscopy and X-ray photoelectron spectroscopy were employed. The cubic zinc-blende crystal structure of ZnTe and Cu-doped ZnTe films was discovered using X-ray diffraction crystallography. According to these microstructural studies, the average crystallite size increased as the amount of Cu doping increased, whereas the microstrain decreased as the crystallinity increased; hence, defects were minimized. The Swanepoel method was used to compute the refractive index, and it was found that the refractive index rises as the Cu doping levels rises. The optical band gap energy was observed to decrease from 2.225 eV to 1.941 eV as the Cu content rose from 0% to 8%, and then slightly increase to 1.965 eV at a Cu concentration of 10%. The Burstein-Moss effect may be connected to this observation. The larger grain size, which lessens the dispersion of the grain boundary, was thought to be the cause of the observed increase in the dc electrical conductivity with an increase in Cu doping. In structured undoped and Cu-doped ZnTe films, there were two carrier transport conduction mechanisms that could be seen. According to the Hall Effect measurements, all the grown films exhibited a p-type conduction behavior. In addition, the findings demonstrated that as the Cu doping level rises, the carrier concentration and the Hall mobility similarly rise, reaching an ideal Cu concentration of 8 at.%, which is due to the fact that the grain size decreases grain boundary scattering. Furthermore, we examined the impact of the ZnTe and ZnTe:Cu (at Cu 8 at.%) layers on the efficiency of the CdS/CdTe solar cells.

ZnTe Crystal Multimode Cryogenic Thermometry Using Raman and Luminescence Spectroscopy.

In this study, ZnTe crystal was applied to provide precise thermal sensing for cryogenic temperatures. Multiple techniques, namely Raman and photoluminescence spectroscopies, were used to broaden the operating temperature range and improve the reliability of the proposed thermometers. Raman-based temperature sensing could be applied in the range of 20-100 K, while luminescence-based thermometry could be utilized in a narrower range of 20-70 K. However, the latter strategy provides better relative thermal sensitivity and temperature resolution. The best thermal performances based on a single temperature-dependent parameter attain Sr = 3.82% K-1 and ΔT = 0.12 K at T = 50 K. The synergy between multiple linear regression and multiparametric thermal sensing demonstrated for Raman-based thermometry results in a ten-fold improvement of Sr and a two-fold enhancement of ΔT. All studies performed testify that the ZnTe crystal is a promising multimode contactless optical sensor for cryogenic thermometry.

ZnTe/rGO Composite as the Fully Zinced Conversion-Type Cathodes for Aqueous Zinc Ion Batteries.

Conversion-type cathodes for aqueous zinc ion batteries (ZIBs) can provide flat plateau slop and stable output potential, compared to general intercalation-type cathodes. The high volumetric capacity and stable output potential of Te make it a promising cathode for ZIBs, but sluggish kinetics and large volume change hinder its further application. To address these issues, we revisit fully zinced ZnTe and construct ZnTe/rGO composites as the new conversion-type cathode. The electrode undergoes a solid-to-solid conversion reaction and shows a stable output potential with ultra-flat discharge plateau slop of 0.09 V (Ah g-1 )-1 . When ZnTe is de-zinced and transformed to Te during charge process, it has a volume shrinkage which generates empty space in graphene matrix for latter volume expansion of Te. The graphene matrix also improves conductivity and reaction kinetics of the cathode. Due to the combination of pre-zincation of ZnTe, graphene matrix and the elimination of "shuttle effects" process, ZnTe/rGO electrode exhibits a high and stable capacity of 186 mAh g-1 at 500 mA g-1 after 300 cycling, with almost no decay after initial 10 cycles.

Solution-processed CZTS thin films and its simulation study for solar cell applications with ZnTe as the buffer layer.

Using zinc tellurium (ZnTe) as the buffer layer in the Cu2ZnSnS4 (CZTS)-based solar cells showed an improvement in overall efficiency. ZnTe is investigated as an alternative to replace the conventional toxic Cd-contained buffer layers. It may also reduce the overall cost of these cells as both layers (ZnTe and CZTS) have eco-friendly and earth-abundant constituents. The sol-gel spin coating method is used for the deposition of CZTS thin films on the corning glass substrates. The X-ray diffraction studies showed the peaks corresponding to (112), (200), (220), and (312) planes which confirmed the formation of the essential kesterite phase. The optical band gap of the deposited films was found at around 1.45 eV by the UV-visible-NIR spectrophotometer. The optimum thickness of the absorber layer (CZTS) and buffer layer (ZnTe) was investigated based on the performance of the ZnO:Al/ZnO/ZnTe/CZTS/Mo cell structure by using the AMPS-1D simulation tool. In contrast, the tool was molded by the experimentally investigated data for the constituent materials of the cell structure. The solar cells' efficiency was increased by 23.47% at 2500 nm and 50 nm thickness of the CZTS and ZnTe layers, respectively. In addition, it was analyzed and found that the current density value showed an improvement with operating temperature as it is one of the requirements in the high solar radiation areas where the temperature even rises more than 50 °C in the summer.

A Study of the Lossy Mode Resonances during the Synthesis Process of Zinc Telluride Films.

Films of zinc telluride (ZnTe) were deposited on the surface of a chemically thinned section of an optical fiber by metalorganic chemical vapor deposition. The boundary values of temperatures and the concentration ratios of the initial tellurium and zinc precursors at which the synthesis of ZnTe coatings is possible are determined. The influence of the position of the thinned part of the optical fiber in the reactor on the growth rate of films on the side surface of the fiber was studied, on the basis of which, the parameters of the deposition zone were determined. By placing a section of an optical fiber with an etched cladding in the center of this zone, sensitive elements for refractometers were created. The principle of their operation is based on the dependence of the spectral position of the lossy mode resonance (LMR) maximum on the refractive index (RI) of the external medium. It has been found that even thin films deposited on a light guide in a continuous process have cracks. It is shown that the interruption of the deposition process makes it possible to avoid the appearance of defects in the zinc telluride layers even with the repeated deposition of the sensor. The sensitivity of the spectral position of the LMR to changes in the RI of aqueous sodium chloride solutions in the range from 1.33 to 1.35 for the first transverse electric and transverse magnetic LMRs was 6656 and 6240 nm per refractive index unit, respectively.

DFT insights into the selective NH3sensing mechanism of two dimensional ZnTe monolayer.

Exploring novel NH3sensing materials is crucial in chemical industries, fertilizing plants and medical fields. Herein, for the first time, the NH3sensing behaviors and sensing mechanisms of two dimensional (2D) ZnTe monolayer are systematically investigated by density functional theory calculations. It is shown that 2D ZnTe monolayer exhibits excellent selective NH3sensing properties. (220) crystal facet of ZnTe possesses a higher NH3adsorption energy (-1.59 eV) and a larger charge transfer (0.195e) than (111) and (311) crystal facets. The positive charges could enhance NH3sensing while the negative charges could reduce NH3sensing. The NH3adsorption strengths are significantly improved in O2atmosphere while it is negligibly affected by N2atmosphere and H2O atmosphere. Moreover, the presence of Zn vacancy and Fe, Co, Ni doping could improve the NH3sensing of ZnTe. Additionally, the experimental results confirms that ZnTe possesses a low detection limit of 0.1 ppm NH3. These theoretical predictions and experimental results present a wide range of possibilities for the further development of ZnTe monolayer in NH3sensing fields.

Solar-Driven Syngas Production Using Al-Doped ZnTe Nanorod Photocathodes.

Syngas, traditionally produced from fossil fuels and natural gases at high temperatures and pressures, is an essential precursor for chemicals utilized in industry. Solar-driven syngas production can provide an ideal pathway for reducing energy consumption through simultaneous photoelectrochemical CO2 and water reduction at ambient temperatures and pressures. This study performs photoelectrochemical syngas production using highly developed Al-doped ZnTe nanorod photocathodes (Al:ZnTe), prepared via an all-solution process. The facile photo-generated electrons are transferred by substitutional Al doping on Zn sites in one-dimensional arrays to increase the photocurrent density to -1.1 mA/cm2 at -0.11 VRHE, which is 3.5 times higher than that for the pristine ZnTe. The Al:ZnTe produces a minor CO (FE ≈ 12%) product by CO2 reduction and a major product of H2 (FE ≈ 60%) by water reduction at -0.11 VRHE. Furthermore, the product distribution is perfectly switched by simple modification of Au deposition on photocathodes. The Au coupled Al:ZnTe exhibits dominant CO production (FE ≈ 60%), suppressing H2 evolution (FE ≈ 15%). The strategies developed in this study, nanostructuring, doping, and surface modification of photoelectrodes, can be applied to drive significant developments in solar-driven fuel production.

Precise strain mapping of nano-twinned axial ZnTe/CdTe hetero-nanowires by scanning nanobeam electron diffraction.

The occurrence of strain is inevitable for the growth of lattice mismatched heterostructures. It affects greatly the mechanical, electrical and optical properties of nano-objects. It is also the case for nanowires which are characterized by a high surface to volume ratio. Thus, the knowledge of the strain distribution in nano-objects is critically important for their implementation into devices. This paper presents an experimental data for II-VI semiconductor system. Scanning nanobeam electron diffraction strain mapping technique for hetero-nanowires characterized by a large lattice mismatch (>6% in the case of CdTe/ZnTe) and containing segments with nano-twins has been described. The spatial resolution of about 2 nm is 10 times better than obtained in synchrotron nanobeam systems. The proposed approach allows us to overcome the difficulties related to nanowire thickness variations during the acquisition of the nano-beam electron diffraction data. In addition, the choice of optimal parameters used for the acquisition of nano-beam diffraction data for strain mapping has been discussed. The knowledge of the strain distribution enables, in our particular case, the improvement of the growth model of extremely strained axial nanowires synthetized by vapor-liquid solid growth mechanism. However, our method can be applied for the strain mapping in nanowire heterostructures grown by any other method.

Oxidation of MBE-Grown ZnTe and ZnTe/Zn Nanowires and Their Structural Properties.

Results of comparative structural characterization of bare and Zn-covered ZnTe nanowires (NWs) before and after thermal oxidation at 300 °C are presented. Scanning electron microscopy, energy-dispersive X-ray spectroscopy, high-resolution transmission electron microscopy, and Raman scattering not only unambiguously confirm the conversion of the outer layer of the NWs into ZnO, but also demonstrate the influence of the oxidation process on the structure of the inner part of the NWs. Our study shows that the morphology of the resulting ZnO can be improved by the deposition of thin Zn shells on the bare ZnTe NWs prior to the oxidation. The oxidation of bare ZnTe NWs results in the formation of separated ZnO nanocrystals which decorate crystalline Te cores of the NWs. In the case of Zn-covered NWs, uniform ZnO shells are formed, however they are of a fine-crystalline structure or partially amorphous. Our study provides an important insight into the details of the oxidation processes of ZnTe nanostructures, which could be of importance for the preparation and performance of ZnTe based nano-devices operating under normal atmospheric conditions and at elevated temperatures.

Thickness Effect on Some Physical Properties of RF Sputtered ZnTe Thin Films for Potential Photovoltaic Applications.

Zinc telluride thin films with different thicknesses were grown onto glass substrates by the rf magnetron sputtering technique, using time as a variable growth parameter. All other deposition process parameters were kept constant. The deposited thin films with thickness from 75 to 460 nm were characterized using X-ray diffraction, electron microscopy, atomic force microscopy, ellipsometry, and UV-Vis spectroscopy, to evaluate their structures, surface morphology, topology, and optical properties. It was found out that the deposition time increase leads to a larger growth rate. This determines significant changes on the ZnTe thin film structures and their surface morphology. Characteristic surface metrology parameter values varied, and the surface texture evolved with the thickness increase. Optical bandgap energy values slightly decreased as the thickness increased, while the mean grains radius remained almost constant at ~9 nm, and the surface to volume ratio of the films decreased by two orders of magnitude. This study is the first (to our knowledge) that thoroughly considered the correlation of film thickness with ZnTe structuring and surface morphology characteristic parameters. It adds value to the existing knowledge regarding ZnTe thin film fabrication, for various applications in electronic and optoelectronic devices, including photovoltaics.