Opportunities and challenges for DNA in atomic and close-to-atomic scale manufacturing.

The revolutionary products obtained from atomic and close-to-atomic scale manufacturing (ACSM) has motivated people to conduct more in-depth research. There is a pressing need to surpass the constraints of current technology and achieve precise construction at the atomic scale. The emergence of DNA nanotechnology has enabled DNA to serve as a template for precisely localizing functional components. These advantages of DNA in bottom-up manufacturing give it great potential in ACSM. From this perspective, we review the ability of DNA to accurately build complex structures and discuss its application and prospects in precise atomic manipulation. Finally, opportunities and challenges for DNA in ACSM are systematically summarized.

Polishing Approaches at Atomic and Close-to-Atomic Scale.

Roughness down to atomic and close-to-atomic scale is receiving an increasing attention in recent studies of manufacturing development, which can be realized by high-precision polishing processes. This review presents polishing approaches at atomic and close-to-atomic scale on planar and curved surfaces, including chemical mechanical polishing, plasma-assisted polishing, catalyst-referred etching, bonnet polishing, elastic emission machining, ion beam figuring, magnetorheological finishing, and fluid jet polishing. These polishing approaches are discussed in detail in terms of removal mechanisms, polishing systems, and industrial applications. The authors also offer perspectives for future studies to address existing and potential challenges and promote technological progress.

Toward Single-Atomic-Layer Lithography on Highly Oriented Pyrolytic Graphite Surfaces Using AFM-Based Electrochemical Etching.

Atomic force microscopy (AFM)-based electrochemical etching of a highly oriented pyrolytic graphite (HOPG) surface is studied toward the single-atomic-layer lithography of intricate patterns. Electrochemical etching is performed in the water meniscus formed between the AFM tip apex and HOPG surface due to a capillary effect under controlled high relative humidity (~ 75%) at otherwise ambient conditions. The conditions to etch nano-holes, nano-lines, and other intricate patterns are investigated. The electrochemical reactions of HOPG etching should not generate debris due to the conversion of graphite to gaseous CO and CO2 based on etching reactions. However, debris is observed on the etched HOPG surface, and incomplete gasification of carbon occurs during the etching process, resulting in the generation of solid intermediates. Moreover, the applied potential is of critical importance for precise etching, and the precision is also significantly influenced by the AFM tip wear. This study shows that the AFM-based electrochemical etching has the potential to remove the material in a single-atomic-layer precision. This result is likely because the etching process is based on anodic dissolution, resulting in the material removal atom by atom.

Structure Fabrication on Silicon at Atomic and Close-To-Atomic Scale Using Atomic Force Microscopy: Implications for Nanopatterning and Nanodevice Fabrication.

In this paper, the atomic-scale structure fabrication on Si (100) substrate using atomic force microscopy (AFM) with the aid of electrochemical and mechanical processes in a humid environment and under ambient conditions is studied. The local oxidation patterns are formed using platinum-coated tips with the aid of bias applied to the tip-substrate junction, and direct removal has been achieved using single crystal diamond tips, enabling the structure fabrication at the atomic and close-to-atomic scale. The depth and height of the etched trenches reached about 1 nm, which provides an approach for the fabrication of atomic-scale electrodes for molecular device development. Furthermore, material removal close to about three silicon atoms (~3.2 Å) has been achieved. This is important in molecular device fabrication. A detailed comparison among the nanopatterns and the material removal over bare and hydrofluoric acid (HF) treated silicon substrates is provided. This comparison is useful for the application of fabricating atomic-scale electrodes needed for the molecular electronic components. A deep understanding of atomic-scale material removal can be pushed to fabricate a single atomic protrusion by removing the neighbouring atoms so that the molecule can be attached to a single atom, thereby the AFM tip and Si substrate could act as the electrodes and the molecule between them as the channel, providing basic transistor actions in a molecular transistor design. In this paper, platinum-coated and single-crystal diamond tips are used to explain the oxide formations and direct material removal, respectively.

Study on Mechanisms of Photon-Induced Material Removal on Silicon at Atomic and Close-to-Atomic Scale.

This paper presents a new approach for material removal on silicon at atomic and close-to-atomic scale assisted by photons. The corresponding mechanisms are also investigated. The proposed approach consists of two sequential steps: surface modification and photon irradiation. The back bonds of silicon atoms are first weakened by the chemisorption of chlorine and then broken by photon energy, leading to the desorption of chlorinated silicon. The mechanisms of photon-induced desorption of chlorinated silicon, i.e., SiCl2 and SiCl, are explained by two models: the Menzel-Gomer-Redhead (MGR) and Antoniewicz models. The desorption probability associated with the two models is numerically calculated by solving the Liouville-von Neumann equations for open quantum systems. The calculation accuracy is verified by comparison with the results in literatures in the case of the NO/Pt (111) system. The calculation method is then applied to the cases of SiCl2/Si and SiCl/Si systems. The results show that the value of desorption probability first increases dramatically and then saturates to a stable value within hundreds of femtoseconds after excitation. The desorption probability shows a super-linear dependence on the lifetime of excited states.