Minimizing Interfacial Energy Loss and Volatilization of Formamidinium via Polymer-Assisted D-A supramolecular Self-Assembly Interface for Inverted Perovskite Solar Cells with 25.78% Efficiency.

2D perovskite passivation strategies effectively reduce defect-assisted carrier nonradiative recombination losses on the perovskite surface. Nonetheless, severe energy losses are causing by carrier thermalization, interfacial nonradiative recombination, and conduction band offset still persist at heterojunction perovskite/PCBM interfaces, which limits further performance enhancement of inverted heterojunction PSCs. Here, 5,10,15,20-tetrakis(pentafluorophenyl)porphyrin (5FTPP) is introduced between 3D/2D perovskite heterojunction and PCBM. Compared to tetraphenylporphyrin without electron-withdrawing fluoro-substituents, 5FTPP can self-assemble with PCBM at interface into donor-acceptor (D-A) complex with stronger supramolecular interaction and lower energy transfer losses. This rapid energy transfer from donor (5FTPP) to acceptor (PCBM) within femtosecond scale is demonstrated to enlarge hot carrier extraction rates and ranges, reducing thermalization losses. Furthermore, the incorporation of polystyrene derivative (PD) reinforces D-A interaction by inhibiting self-π-π stacking of 5FTPP, while fine-tuning conduction band offset and suppressing interfacial nonradiative recombination via Schottky barrier, dipole, and n-doping. Notably, the multidentate anchoring of PD-5FTPP with FA+, Pb2+, and I- mitigates the adverse effects of FA+ volatilization during thermal stress. Ultimately, devices with PD-5FTPP achieve a power conversion efficiency of 25.78% (certified: 25.36%), maintaining over 90% of initial efficiency after 1000 h of continuous illumination at the maximum power point (65 °C) under ISOS-L-2 protocol.

XPS valence band observable light-responsive system for photocatalytic acid Red114 dye decomposition using a ZnO-Cu2O heterojunction.

ZnO-Cu2O composites were made as photocatalysts in a range of different amounts using an easy, cheap, and environment-friendly coprecipitation method due to their superior visible light activity to remove pollutants from the surrounding atmosphere. X-ray diffraction and Fourier transform infrared spectroscopy (FT-IR) have demonstrated that ZnO-Cu2O catalysts are made of highly pure hexagonal ZnO and cubic Cu2O. X-ray photoelectron spectroscopy has confirmed that there is a substantial interaction between the two phases of the resultant catalyst. The optical characterizations of the synthesized ZnO-Cu2O composite were done via UV-vis reflectance spectroscopy. Due to the doping on ZnO, the absorption range of the ZnO-Cu2O catalyst is shifted from the ultraviolet to the visible region due to diffuse reflection. The degradation efficiency is affected by the Ratio of ZnO: Cu2O and ZnO-Cu2O composite with a proportion of 90:10 exhibited the most prominent photocatalytic activity on Acid Red 114, with a pseudo-first-order rate constant of 0.05032 min-1 that was 6 and 11 times greater than those of ZnO and Cu2O, respectively. The maximum degradation efficiency is 97 %. The enhanced photocatalytic activity of the composite is caused by the synergistic interaction of ZnO and Cu2O, which improves visible light absorption by lowering band gap energy and decreasing the rate at which the electron-hole pairs recombine. The scavenging experiment confirmed that hydroxyl radical was the dominant species for the photodegradation of Acid Red 114. Notably, the recycling test demonstrated the ZnO-Cu2O photocatalyst was highly stable and recyclable. These results suggest that the ZnO-Cu2O mix might be able to clean up environmental pollutants when it meets visible light.

Enhancing the Carrier Mobility and Bias Stability in Metal-Oxide Thin Film Transistors with Bilayer InSnO/a-InGaZnO Heterojunction Structure.

In this study, the electrical performance and bias stability of InSnO/a-InGaZnO (ITO/a-IGZO) heterojunction thin-film transistors (TFTs) are investigated. Compared to a-IGZO TFTs, the mobility (µFE) and bias stability of ITO/a-IGZO heterojunction TFTs are enhanced. The band alignment of the ITO/a-IGZO heterojunction is analyzed by using X-ray photoelectron spectroscopy (XPS). A conduction band offset (∆EC) of 0.5 eV is observed in the ITO/a-IGZO heterojunction, resulting in electron accumulation in the formed potential well. Meanwhile, the ∆EC of the ITO/a-IGZO heterojunction can be modulated by nitrogen doping ITO (ITON), which can affect the carrier confinement and transport properties at the ITO/a-IGZO heterojunction interface. Moreover, the carrier concentration distribution at the ITO/a-IGZO heterointerface is extracted by means of TCAD silvaco 2018 simulation, which is beneficial for enhancing the electrical performance of ITO/a-IGZO heterojunction TFTs.

Tailored Band Structure of Cu(In,Ga)Se2 Thin-Film Heterojunction Solar Cells: Depth Profiling of Defects and the Work Function.

An efficient carrier transport is essential for enhancing the performance of thin-film solar cells, in particular Cu(In,Ga)Se2 (CIGS) solar cells, because of their great sensitivities to not only the interface but also the film bulk. Conventional methods to investigate the outcoming carriers and their transport properties measure the current and voltage either under illumination or dark conditions. However, the evaluation of current and voltage changes along the cross-section of the devices presents several limitations. To mitigate this shortcoming, we prepared gently etched devices and analyzed their properties using micro-Raman scattering spectroscopy, Kelvin probe force microscopy, and photoluminescence measurements. The atomic distributions and microstructures of the devices were investigated, and the defect densities in the device bulk were determined via admittance spectroscopy. The effects of Ga grading on the charge transport at the CIGS-CdS interface were categorized into various types of band offsets, which were directly confirmed by our experiments. The results indicated that reducing open-circuit voltage loss is crucial for obtaining a higher power conversion efficiency. Although the large Ga grading in the CIGS absorber induced higher defect levels, it effectuated a smaller open-circuit voltage loss because of carrier transport enhancement at the absorber-buffer interface, resulting from the optimized conduction band offsets.

Improving the Open-Circuit Voltage of Sn-Based Perovskite Solar Cells by Band Alignment at the Electron Transport Layer/Perovskite Layer Interface.

Organic-inorganic lead halide perovskites are promising materials for realization of low-cost and high-efficiency solar cells. Because of the toxicity of lead, Sn-based perovskite materials have been developed as alternatives to enable fabrication of Pb-free perovskite solar cells. However, the solar cell performance of Sn-based perovskite solar cells (Sn-PSCs) remains poor because of their large open-circuit voltage (VOC) loss. Sn-based perovskite materials have lower electron affinities than Pb-based perovskite materials, which result in larger conduction band offset (CBO) values at the interface between the Sn-based perovskite and a conventional electron transport layer (ETL) material such as TiO2. Herein, the relationship between the VOC and the CBO in these devices was studied to improve the solar cell performances of Sn-PSCs. It was found that the band offset at the ETL/perovskite layer interface affects the VOC of the Sn-PSCs significantly but does not affect that of the Pb-PSCs because the Sn-based perovskite material is a p-type semiconductor, unlike the Pb-based perovskite. It was also found that Nb2O5 has the CBO that is closest to zero for Sn-based perovskite materials, and the VOC values of Sn-PSCs that use Nb2O5 as their ETL are higher than those of Sn-PSCs using TiO2 or SnO2 ETLs. This study indicates that control of the energy alignment at the ETL/perovskite layer interface is an important factor in improving the VOC values of Sn-PSCs.

Design and synthesis of robust Z-scheme ZnS-SnS2 n-n heterojunctions for highly efficient degradation of pharmaceutical pollutants: Performance, valence/conduction band offset photocatalytic mechanisms and toxicity evaluation.

Petal-like ZnS-SnS2 heterojunctions with Z-scheme band alignment were prepared by one-pot solvothermal strategy. The optimal (1:1) ZnS-SnS2 can degrade 93.46 % of tetracycline and remove 73.9 % COD of pharmaceutical wastewater under visible-light irradiation due to the efficient production of H, O2-, h+ and OH. The toxicity evaluation by ECOSAR prediction and the growth of E. coli indicates efficient toxicity reduction of tetracycline by photocatalysis and the non-toxicity of ZnS-SnS2. The attacked sites on tetracycline by reactive species were analyzed according to Fukui index, and two degradation pathways of tetracycline were inferred via the identification of intermediate products. Tetracycline degradation efficiency and the energy consumption in different water bodies were compared, and it was found that the electrical energy per order (EE/O) was the lowest in Ganjiang River. The valence band offset (ΔEVBO) and conduction band offset (ΔECBO) of ZnS-SnS2 were 1.02 eV and 0.22 eV, respectively. The probable photocatalytic mechanism of ZnS/SnS2 heterojunctions with Z-scheme band alignment based on ΔEVBO and ΔECBO was first presented.

Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy.

Diamond is not only a free standing highly transparent window but also a promising carrier confinement layer for InN based devices, yet little is known of the band offsets in InN/diamond system. X-ray photoelectron spectroscopy was used to measure the energy discontinuity in the valence band offset (VBO) of InN/diamond heterostructure. The value of VBO was determined to be 0.39 ± 0.08 eV and a type-I heterojunction with a conduction band offset (CBO) of 4.42 ± 0.08 eV was obtained. The accurate determination of VBO and CBO is important for the application of III-N alloys based electronic devices.

Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy.

X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) of the w-InN/h-BN heterojunction. We find that it is a type-II heterojunction with the VBO being -0.30 ± 0.09 eV and the corresponding conduction band offset (CBO) being 4.99 ± 0.09 eV. The accurate determination of VBO and CBO is important for designing the w-InN/h-BN-based electronic devices.