WSe2 Negative Capacitance Field-Effect Transistor for Biosensing Applications.

Field-effect transistor (FET) biosensors based on two-dimensional (2D) materials are highly sought after for their high sensitivity, label-free detection, fast response, and ease of on-chip integration. However, the subthreshold swing (SS) of FETs is constrained by the Boltzmann limit and cannot fall below 60 mV/dec, hindering sensor sensitivity enhancement. Additionally, the gate-leakage current of 2D material biosensors in liquid environments significantly increases, adversely affecting the detection accuracy and stability. Based on the principle of negative capacitance, this paper presents for the first time a two-dimensional material WSe2 negative capacitance field-effect transistor (NCFET) with a minimum subthreshold swing of 56 mV/dec in aqueous solution. The NCFET shows a significantly improved biosensor function. The pH detection sensitivity of the NCFET biosensor reaches 994 pH-1, nearly an order of magnitude higher than that of the traditional two-dimensional WSe2 FET biosensor. The Al2O3/HfZrO (HZO) bilayer dielectric in the NCFET not only contributes to negative capacitance characteristics in solution but also significantly reduces the leakage in solution. Utilizing an enzyme catalysis method, the WSe2 NCFET biosensor demonstrates a specific detection of glucose molecules, achieving a high sensitivity of 4800 A/A in a 5 mM glucose solution and a low detection limit (10-9 M). Further experiments also exhibit the ability of the biosensor to detect glucose in sweat.

Visualizing Ferroelectric Uniformity of Hf1-xZrxO2 Films Using X-ray Mapping.

Hf1-xZrxO2 (HZO) is a complementary metal-oxide-semiconductor (CMOS)-compatible ferroelectric (FE) material with considerable potential for negative capacitance field-effect transistors, ferroelectric memory, and capacitors. At present, however, the deployment of HZO in CMOS integrated circuit (IC) technologies has stalled due to issues related to FE uniformity. Spatially mapping the FE distribution is one approach to facilitating the optimization of HZO thin films. This paper presents a novel technique based on synchrotron X-ray nanobeam absorption spectroscopy capable of mapping the three main phases of HZO (i.e., orthorhombic (O), tetragonal (T), and monoclinic (M)). The practical value of the proposed methodology when implemented in conjunction with kinetic-nucleation modeling is demonstrated by our development of a T → O annealing (TOA) process to optimize HZO films. This process produces an HZO film with the largest polarization values (Ps = 64.5 µC cm-2; Pr = 35.17 µC cm-2) so far, which can be attributed to M-phase suppression followed by low-temperature annealing for the induction of a T → O phase transition.