Ultra-efficient Heat Transport across a "2.5D" All-carbon sp2/sp3 Hybrid Interface.

Single- and few-layer graphene-based thermal interface materials (TIMs) with extraordinary high-temperature resistance and ultra-high thermal conductivity are very essential to develop the next-generation integrated circuits. However, the function of the as-prepared graphene-based TIMs would undergo severe degradation when being transferred to chips, as the interface between the TIMs and chips possesses a very small interfacial thermal conductance. Here, a "2.5D" all-carbon interface containing rich covalent bonding, namely a sp2/sp3 hybrid interfaces is designed and realized by a plasma-assisted chemical vapor deposition with a function of ultra-rapid quenching. The interfacial thermal conductance of the 2.5D interface is excitingly very high, up to 110-117 MWm-2K-1 at graphene thickness of 12-25 nm, which is even more than 30% higher than various metal/diamond contacts, and orders of magnitude higher than the existing all-carbon contacts. Atomic-level simulation confirm the key role of the efficient heat conduction via covalent C-C bonds, and reveal that the covalent-based heat transport could contribute 85% to the total interfacial conduction at a hybridization degree of 22 at%. This study provides an efficient strategy to design and construct 2.5D all-carbon interfaces, which can be used to develop high performance all-carbon devices and circuits.

Hydrogen-Doped c-BN as a Promising Path to High-Temperature Superconductivity Above 120 K at Ambient Pressure.

Finding high-temperature superconductivity in light-weight element containing compounds at atmosphere pressure is currently a research hotspot but has not been reached yet. Here it is proposed that hard or superhard materials can be promising candidates to possess the desirable high-temperature superconductivity. By studying the electronic structures and superconducting properties of H and Li doped c-BN within the framework of the first-principles, it is demonstrated that the doped c-BN are indeed good superconductors at ambient pressure after undergoing the phase transition from the insulating to metallic behavior, though holding different nature of metallization. Li doped c-BN is predicted to exhibit the superconducting transition temperature of ≈58 K, while H doped c-BN has stronger electron-phonon interaction and possesses a higher transition temperature of 122 K. These results and findings thus point out a new direction for exploring the ambient-pressure higher-temperature superconductivity in hard or superhard materials.

Ultralow Contact Thermal Resistance between Bismuth Selenide Nanoribbons Achieved by Current-Induced Annealing.

Thermal resistance at interfaces/contacts stands as a persistent and increasingly critical issue, which hinders ultimate scaling and the performance of electronic devices. Compared to the extensive research on contact electrical resistance, contact thermal resistance and its mitigation strategies have received relatively less attention. Here, we report on an effective, in situ, and energy-efficient approach for enhancing thermal transport through the contact between semiconducting nanoribbons. By applying microampere-level electrical currents to the contact between Bi2Se3 nanoribbons, we demonstrate that the contact thermal resistance between two nanoribbon segments is reduced dramatically by a factor of 4, rendering the total thermal resistance of two ribbon segments with a contact approximately the same as that of the corresponding single continuous nanoribbon of the same length. Analysis suggests that the ultralow contact thermal resistance is due to enhanced phonon transmission as a result of enhanced adhesion energy at the contact, with marginal contributions from direct electron-phonon coupling, even for ohmic contacts. Our work introduces a broadly applicable electrical treatment approach to various contacts between conducting and semiconducting materials, which has important implications for the design and operation of nanoelectronic devices and energy converters.

Phonon Drag Contribution to Thermopower for a Heated Metal Nanoisland on a Semiconductor Substrate.

The possible contribution of phonon drag effect to the thermoelectrically sustained potential of a heated nanoisland on a semiconductor surface was estimated in a first principal consideration. We regarded electrons and phonons as interacting particles, and the interaction cross-section was derived from the basic theory of semiconductors. The solution of the equation of motion for average electrons under the simultaneous action of phonon drag and electric field gave the distributions of phonon flux, density of charge carriers and electric potential. Dimensional suppression of thermal conductance and electron-phonon interaction were accounted for but found to be less effective than expected. The developed model predicts the formation of a layer with a high density of charge carriers that is practically independent of the concentration of dopant ions. This layer can effectively intercept the phonon flow propagating from the heated nanoisland. The resulting thermoEMF can have sufficient magnitudes to explain the low-voltage electron emission capability of nanoisland films of metals and sp2-bonded carbon, previously studied by our group. The phenomenon predicted by the model can be used in thermoelectric converters with untypical parameters or in systems for local cooling.

Ultrafast Structural Transition and Electron-Phonon/Phonon-Phonon Coupling in Antimony Revealed by Nonadiabatic Molecular Dynamics.

Real-time time-dependent density-functional theory molecular dynamics (rt-TDDFT-MD) reveals the nonadiabatic dynamics of the ultrafast photoinduced structural transition in a typical phase-change material antimony (Sb) with Peierls distortion (PD). As the excitation intensity increases from 3.54% to 5.00%, three distinct structural transition behaviors within 1 ps are observed: no PD flipping, nonvolatile-like PD flipping, and nonstop back-and-forward PD flipping. Analyses on electron-phonon and phonon-phonon couplings indicate that the excitation-activated coherent A1g phonon mode by electron-phonon coupling drives the structural transition within several hundred femtoseconds. Then, the energy of coherent motions are transformed into that of random thermal motions via phonon-phonon coupling, which prevents the A1g-mode-like coherent structure oscillations. The electron-phonon coupling and coherent motions will be enhanced with increasing the excitation intensity. Therefore, a moderate excitation intensity that can balance the coherent and decoherent thermal movements will result in a nonvolatile-like PD flipping. These findings illustrate important roles of nonadiabatic electron-phonon/phonon-phonon couplings in the ultrafast laser-induced structural transitions in materials with Peierls distortion, offering insights for manipulating their structures and properties by light.

Thermal, mechanical, and electrical properties of Si-stacked nanosheet transistors using machine learning interatomic potentials.

Thermal and mechanical properties play a key role in optimizing the performance of nanoelectronic devices. In this study, the lattice thermal conductivity (κL) and elastic constants of Si nanosheets at different sheet thicknesses were determined using recently developed machine learning interatomic potentials (MLIPs). A Si nanosheet with a minimum thickness of 10 atomic layers was used for model training to predict the properties of sheets with greater thicknesses. The training dataset was efficiently constructed using stochastic sampling of the potential energy surface (PES). Density functional theory (DFT) calculations were used to extract the MLIP, which served as the basis for further analysis. The Moment Tensor Potential (MTP) method was used to obtain the MLIP in this study. The results showed that, at sub-6 nm sheet thickness, the thermal conductivity dropped to ∼ 7 % of its bulk value, whereas some stiffness tensor components dropped to ∼ 3 % of the bulk values. These findings contribute to the understanding of heat transport and mechanical behavior of ultrathin Si nanosheets, which is crucial for designing and optimizing nanoelectronic devices. The technological implications of the extracted parameters on nanosheet field-effect transistor (NS-FET) performance at advanced technology nodes were evaluated using TCAD device simulations.

Heat transfer origin of adhesion behaviors between liquid-aluminum and solid aluminum/silicon interfaces.

Liquid-aluminum tends to adhere to some surfaces rather than others, and the underlying mechanism of the differences in adhesion of liquid-aluminum on different surfaces is still unclear. This manuscript takes liquid-aluminum/aluminum and liquid-aluminum/silicon interfaces as research objects, revealing that solid aluminum surface is aluminophilic but the solid silicon surface is aluminophobic, mainly due to differences in interfacial thermal conductance (ITC) between two interfaces. We also investigate effect of surface temperature on adhesion characteristics of liquid-aluminum on aluminum/silicon surfaces, and decode the reasons from lattice integrity and phonon spectra. It is shown that vibrational state with intact lattice excites fewer low frequency phonons with increasing surface temperature, resulting in a decrease in ITC and thus adhesion force. In diffusion state where lattice is fractured resulting from high temperature, interfacial adhesion is increased due to surface defects.

Significantly Enhanced Interfacial Thermal Conductance across GaN/Diamond Interfaces Utilizing AlxGa1-xN as a Phonon Bridge.

Improving the thermal conductance at the GaN/diamond interface is crucial for boosting GaN-based device performance and reliability. In this study, first-principles calculations and molecular dynamics simulations were employed to explore the interfacial thermal conductance of GaN/diamond interfaces with AlxGa1-xN transition layers. The AlxGa1-xN alloy exhibits a lower thermal conductivity than GaN, primarily due to enhanced anharmonic phonon scattering. However, for the interfacial thermal conductance at the GaN/diamond interface, we discovered that introducing an AlxGa1-xN with a high Al concentration (x > 0.5) as a phonon bridge between GaN and diamond can significantly enhance the interfacial thermal conductance. In particular, it increases from 4.79 MW·m-2 K-1 to a maximum of 158 MW·m-2 K-1 at x = 0.75, surpassing the 152 MW·m-2 K-1 achieved by AlN. The AlxGa1-xN alloy has been confirmed computationally as a more efficient phonon bridge, which can provide a valuable theoretical reference for experimentally investigating the thermal management and thermal design of high-power electronic devices based on the GaN/diamond interface.

Atomic-Scale Mechanism of Enhanced Electron-Phonon Coupling at the Interface of MgB2 Thin Films.

In conventional Bardeen-Cooper-Schrieffer (BCS) superconductors, electron-phonon coupling is the fundamental mechanism of superconductivity. For instance, the superconductivity of magnesium diboride (MgB2) comes from the coupling between E2g modes (in-plane boron-boron bond vibrations) and self-doped charge carriers. In thin films and ceramics of BCS superconductors, interfaces with discontinuous chemical bonds may alter the local electron-phonon coupling. However, such effects remain largely unexplored. Here, we investigate the heterointerface of the MgB2 film on the SiC substrate at the atomic scale using electron microscopy and spectroscopy. We detect the presence of a thin MgO layer with a thickness of ∼1 nm between MgB2 and SiC. Atomic-level electron energy loss spectra (EELS) show MgB2-E2g mode splitting and softening near the MgB2/MgO interface, which enhances electron-phonon coupling at the interface. Our findings highlight the potential of interface engineering to enhance superconductivity via modulating local phonon states and/or electron states.

Insights into Thermal Conductivity at the MOF-Polymer Interface.

Understanding the thermal conductivity in metal-organic framework (MOF)-polymer composites is crucial for optimizing their performance in applications involving heat transfer. In this work, several UiO66-polymer composites (where the polymer is either PEG, PVDF, PS, PIM-1, PP, or PMMA) are examined using molecular simulations. Our contribution highlights the interface's impact on thermal conductivity, observing an overall increasing trend attributable to the synergistic effect of MOF enhancing polymer thermal conductivity. Flexible polymers such as PEG and PVDF exhibit increased compatibility with the MOF, facilitating their integration with the MOF lattice. However, this integration leads to a moderated enhancement in thermal conductivity compared to polymers that remain separate from the MOF structure, such as PS or PP. This effect can be attributed to alterations in phonon transport pathways and shifts in interfacial interactions between the polymer and MOF. Specifically, the infiltration of the polymer like PEG and PVDF into the MOF disrupted the MOF's ordered network, introducing defects or barriers that hindered phonon propagation. In contrast, nonpolar and rigid polymers like PP, PMMA, PS, and PIM-1 exhibited greater improvements in thermal conductivity when combined with MOFs compared to the flexible polymers PVDF and PEG. Most notably, our analysis identifies a critical interface region within approximately 30-50 Å that profoundly influences thermal conductivity. The interface region, as indicated by the density profile and radius of gyration, is notably shorter but plays a pivotal role in modulating the thermal properties. The sensitivity of the system to these interface characteristics underscores the crucial role of this particular interface area in dictating the thermal conductivity. Our findings emphasize the sensitivity of thermal conductivity in polymer matrices to interface characteristics and highlight the critical role of a specific interface region in modulating thermal properties.

Phonon-Lithium Ion Interactions: A Case Study of LiM(SeO3)2 (M = Al, Ga, In, Sc, Y, and La).

Li ion diffusion is fundamentally a thermally activated ion hopping process. Recently, soft lattice, anharmonic phonon, and paddlewheel mechanism have been proposed to potentially benefit the ion transport, while the understanding of vibrational couplings of mobile ions and anions is still very limited but essential. Herein, we accessed the ionic conductivity, stability, and especially, lattice dynamics in LiM(SeO3)2 (M = Al, Ga, In, Sc, Y, and La) with two different types of oxygen anions within a LiO4 polyhedron, namely, edge-shared and corner-shared with MO6 polyhedra, the prototype of which, LiGa(SeO3)2, has been theoretically reported before with the similar structural features to NASICON and later experimentally synthesized with the room temperature conductivity ∼0.11 mS cm-1. It is interesting to note that LiM(SeO3)2 with a higher Li phonon band center shows higher Li conductivity, which is in contradiction to the conventional understanding of the importance for soft lattice to superionic conductors. The anharmonic and harmonic phonon interactions as well as the couplings between the vibration of the edge-bonded or corner-bonded anion in Li polyanions and the Li ion diffusion have been studied in detail. With transition metal M changing from La, Y, In, Ga, Al, and Sc, anharmonic phonons increase with reduced activation energy for Li diffusion. The phonon modes dominated by the edge-bonded oxygen anions contribute more to the migration of the Li ion than those dominated by the corner-bonded oxygen anions because of the greater atomic interaction between the Li ion and the edge-bonded anions. Thus, rather than the overall lattice softness, attention shall be given to reduce the frequency of the critical phonons contributing to Li ion diffusion as well as to increase the anharmonicity, i.e., through asymmetric Li polyhedra, for the design of Li ion superionic conductors for all-solid-state batteries.

Phonon Transport in Supramolecular Polymers Regulated by Hydrogen Bonds.

Supramolecular polymers hold promise in thermal management applications due to their multistability, high responsiveness, and cost-effectiveness. In this work, we successfully regulate phonon transport at the molecular level in supramolecular polymers by adjusting the strength of intermolecular hydrogen bonding. We synthesized three supramolecular polymer fibers with thermal conductivity differences of up to 289% based on melamine (M) and three simple positional isomers of hydroxybenzoic acid. Differential Scanning Calorimetry (DSC) measurement revealed discrepancies in thermal stability of the polymers, where structures with higher stability exhibited enhanced thermal conductivity. Fourier Transform Infrared Spectroscopy (FTIR) measurement and Density Functional Theory (DFT) calculations indicate that these differences arise from variations in hydrogen-bonding strengths at different bonding sites. Higher hydrogen-bonding strength leads to more stable thermal pathways, reduces phonon scattering, and increases thermal conductivity. Our findings provide valuable insights into controlling the thermal conductivity of polymer fibers, paving the way for applications in phonon-based thermal devices.

Employing Young's modulus and Debye temperature to calculate the elastic, thermodynamic and thermophysical properties of titanium oxynitrides.

The values of the shear v s and longitudinal v l wave velocities were calculated for 14 selected titanium oxynitrides TiN x O y using the known values of Young's modulus and Debye temperature. The errors Δ of the calculations did not exceed ±0.01%. It turned out that some TiN x O y samples are able to compete with artificial diamonds in terms of v l values and can potentially be used in acoustic resonators for intelligent chemical and biochemical sensors. A number of elastic, thermodynamic and thermophysical quantities were calculated, and graphical dependencies between them were plotted. The established correlations were used to develop two algorithms for predicting the properties of TiN x O y alloys based on a single experimental parameter, namely the X-ray coefficient of thermal expansion or pycnometric density. The highest accuracy was shown by the method based on the experimental density, which allowed to estimate, with acceptable errors, the values of the shear v s and mean v m wave velocities (Δ = ±(1-5)%), the minimum thermal conductivity λ min within the framework of the Cahill‒Pohl model (Δ = ±(0-3)%), the isobaric C p and isochoric C V heat capacities (Δ < 1%); while the known experimental methods and alternative models for determining these quantities are characterized by wider error intervals: Δ(v s) = ±(1-10)%, Δ(λ) = ±(1-10)% and Δ(C p) = ±(1-3)%.

Optimally Suppressed Phonon Tunneling in van der Waals Graphene-WS2 Heterostructure with Ultralow Thermal Conductivity.

Van der Waals heterostructures have great potential for realizing ultimately low thermal conductivity because defectless interfaces can be constructed at a length scale smaller than the phonon wavelength, allowing modulation of coherent phonon transport. In this Letter, we demonstrate the mechanism for thermal conductivity reduction at a mode-resolved level. The graphene-WS2 heterostructure with the lowest cross-plane thermal conductivity of 0.048 W/(m·K) is identified from 16,384 candidates by combining Bayesian optimization and molecular dynamics simulations. Then, the angle-resolved phonon transmission is calculated using the mode-resolved atomistic Green's function. The results reveal that the optimal heterostructure nearly completely terminates phonon transport with finite incident angles, owing to the reduced critical incident angle and suppression of phonon tunneling.

Significantly Enhanced Thermoelectric Performance of p-Type Mg3Sb2 via Zn Substitution on Mg(2) Site: Optimization of Hole Concentration Through Ag Doping.

n-Type Mg3Sb2-based thermoelectric materials have recently garnered significant interest due to their superior thermoelectric efficiency. Yet, the advancement of p-type Mg3Sb2 for thermoelectric applications is impeded by its lower dimensionless figure of merit (zT). In this study, we demonstrate the improved thermoelectric performance of p-type Mg3Sb2 through the strategic optimization of Zn content and Ag doping on the Mg/Zn(2) site. Initially, samples of Mg3-xZnxSb2 (x = 0, 0.5, 1.0, and 1.5) were synthesized via elemental reactions within a Pyrex tube, followed by densification through hot pressing. X-ray diffraction analysis confirmed that the Mg3-xZnxSb2 phases retain the same P3¯m1 space group as the pristine Mg3Sb2 phase. The strategic substitution of Zn improved the power factor via band convergence and reduced lattice thermal conductivity by introducing point defect phonon scattering. This led to a peak zT of 0.5 at 725 K, with an average zT of 0.25 across the 325-725 K range. Enhancement in carrier concentration was achieved by doping Ag onto the Zn site, culminating in a peak zT of 0.95 at 725 K and an average zT of 0.46 between 325 and 725 K for the Mg2Zn0.97Ag0.03Sb2 sample. This performance surpasses that of most p-type Mg3Sb2-based materials, markedly advancing the potential for Mg3Sb2-based materials in midtemperature heat recovery thermoelectric generators.

Spectrum of Tunneling Transport through Phonon-Coupled Defect States in a Carbon-Doped Hexagonal Boron Nitride Barrier.

Defects in hexagonal boron nitride (h-BN) play important roles in tunneling transport through the h-BN barrier. Here, using carbon-doped h-BN (h-BN:C) as a tunnel barrier containing defects in a controlled manner, we investigated tunneling transport through defects in the h-BN:C/graphene heterostructures. Defect-assisted tunneling through a specific kind of carbon-related defect was observed in all measured devices, where the defect level was always located at ∼0.1 eV above the graphene's charge neutrality point. We revealed a phonon-assisted inelastic process in the defect-assisted tunneling, in which carriers tunnel through the defect with phonon emission. Furthermore, when the h-BN:C barrier was thick (12 layers, ∼4 nm), sequential tunneling through two defects became dominant, where the phonon-assisted inelastic process shows substantial effects between the two defects. This study reveals the contribution of phonons to defect-assisted tunneling transport, which is essential for the development of defect-related van der Waals (vdW) electronic techniques.

The Impact of Hydrostatic Pressure on the Structural, Mechanical, Thermal, and Optoelectronic Characteristics of the RbV3Sb5 Kagome Compound: Ab initio Approach.

We studied the RbV3Sb5 kagome compound's structural, mechanical, thermal, and optoelectronic properties. Mulliken and Hirshfeld population analysis found ionic and covalent connections in RbV3Sb5. The Born stability criterion shows that pure RbV3Sb5 is mechanically stable. The precise measurement of 3.96 indicates that our sample has higher machinability at 20 GPa. Low anticipated hardness of RbV3Sb5 suggests it can be used as a soft solid lubricant. Hardness ratings rise with pressure, however there are exceptions. Pressure causes large nonmonotonic changes in RbV3Sb5's anisotropic characteristics. A comparable 20 GPa Zener anisotropic value, RbV3Sb5 has the highest. The structure's projected Debye temperature at 0 GPa is 284.39 K, indicating softness. Dispersion curves with negative frequencies suggest ground state structural dynamical instability. The structure has no negative-energy phonon branches under 10 GPa stress. From band structure and density of state analysis, the structure behaves metallically under hydrostatic pressure. Also, the structure has maximal ultra-violet conductivity and absorption. The absorption coefficient, conductivity, and loss function plots show uniform patterns at all pressures. As pressure rises, these graphs' peaks blue shift.

Multiferroic and Phonon Properties of the Double Perovskite Pr2FeAlO6.

With the help of a microscopic model and Green's function technique, we studied the multiferroic and phonon properties of the recently reported new multiferroic Pr2FeAlO6 (PFAO) compound, which belongs to the double perovskite A2BB'O6 family. The magnetization decreases with the increase in temperature and disappears at the ferromagnetic Curie temperature TCFM. The polarization increases with the application of an external magnetic field, indicating strong magnetoelectric coupling and confirming the multiferroic behavior of PFAO. In the curves of dependence of the phonon energy and their damping with respect to temperature, a kink is observed at TCFM. This is due to the strong anharmonic spin-phonon interactions, which play a crucial role below TCFM and are frequently observed in other double perovskite compounds. Above TCFM, only anharmonic phonon-phonon coupling remains. The phonon mode is controlled by an external magnetic field.

Impact of Acoustic and Optical Phonons on the Anisotropic Heat Conduction in Novel C-Based Superlattices.

C-based XC binary materials and their (XC)m/(YC)n (X, Y ≡ Si, Ge and Sn) superlattices (SLs) have recently gained considerable interest as valuable alternatives to Si for designing and/or exploiting nanostructured electronic devices (NEDs) in the growing high-power application needs. In commercial NEDs, heat dissipation and thermal management have been and still are crucial issues. The concept of phonon engineering is important for manipulating thermal transport in low-dimensional heterostructures to study their lattice dynamical features. By adopting a realistic rigid-ion-model, we reported results of phonon dispersions ωjSLk→ of novel short-period XCm/(YC)n001 SLs, for m, n = 2, 3, 4 by varying phonon wavevectors k→SL along the growth k|| ([001]), and in-plane k⟂ ([100], [010]) directions. The SL phonon dispersions displayed flattening of modes, especially at high-symmetry critical points Γ, Z and M. Miniband formation and anti-crossings in ωjSLk→ lead to the reduction in phonon conductivity κz along the growth direction by an order of magnitude relative to the bulk materials. Due to zone-folding effects, the in-plane phonons in SLs exhibited a strong mixture of XC-like and YC-like low-energy ωTA, ωLA modes with the emergence of stop bands at certain k→SL. For thermal transport applications, the results demonstrate modifications in thermal conductivities via changes in group velocities, specific heat, and density of states.

Dynamics of magnetic inhomogeneity in La2CoMnO6 films probed by Raman spectroscopy.

We report the dynamic effects of magnetic inhomogeneity on the temperature evolution of the Raman modes in polycrystalline La2CoMnO6 (LCMO) films. The LCMO films were obtained via chemical solution deposition and annealed at different temperatures, 700, 800 and 900 °C. Temperature-dependent Raman spectroscopic studies uncover anomalous phonon energy behaviors, associated with strong spin-phonon couplings revealed even at ambient conditions. This effect, which is observed to occur well above ferromagnetic ordering temperature is ascribed to short-range Mn4+/Co2+ ferromagnetic clusters. Moreover, our study has shown that spin-phonon coupling strength is governed by competing antiferromagnetic (AFM) and ferromagnetic (FM) interactions. These results significantly enhance the understanding of the complex spin-phonon coupling mechanism to provide insights into magnetic inhomogeneity in systems with two or more magnetic sublattices. These findings suggest the presence of similar effects in other double perovskites within the RE2CoMnO6 (RE = rare earths) family, which exhibit analogous magnetic sublattice and order-disorder defects.