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An on-chip asymmetric directional coupler (DC) can convert fundamental modes to higher-order modes and is one of the core components of mode-division multiplexing (MDM) technology. In this study, we propose that waveguides of the asymmetric DC can be trimmed by silicon ion implantation to tune the effective refractive index and facilitate mode conversion into higher-order modes. Through this method of tuning, transmission changes of up to 18 dB have been realized with one ion implantation step. In addition, adjusting the position of the ion implantation on the waveguide can provide a further degree of control over the transmission into the resulting mode. The results of this work present a promising new route for the development of high-efficiency, low-loss mode converters for integrated photonic platforms, and aim to facilitate the application of MDM technology in emerging photonic neuromorphic computing.
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On-chip optical power monitors are indispensable for functional implementation and stabilization of large-scale and complex photonic integrated circuits (PICs). Traditional on-chip optical monitoring is implemented by tapping a small portion of optical power from the waveguide, which leads to significant loss. Due to its advantages like non-invasive nature, miniaturization, and complementary metal-oxide-semiconductor (CMOS) process compatibility, a transparent monitor named the contactless integrated photonic probe (CLIPP), has been attracting great attention in recent years. The CLIPP indirectly monitors the optical power in the waveguide by detecting the conductance variation of the local optical waveguide caused by the surface state absorption (SSA) effect. In this review, we first introduce the fundamentals of the CLIPP including the concept, the equivalent electric model and the impedance read-out method, and then summarize some characteristics of the CLIPP. Finally, the functional applications of the CLIPP on the identification and feedback control of optical signal are discussed, followed by a brief outlook on the prospects of the CLIPP.
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Sapphire has various applications in photonics due to its broadband transparency, high-contrast index, and chemical and physical stability. Photonics integration on the sapphire platform has been proposed, along with potentially high-performance lasers made of group III-V materials. In parallel with developing active devices for photonics integration applications, in this work, silicon nitride optical waveguides on a sapphire substrate were analyzed using the commercial software Comsol Multiphysics in a spectral window of 800~2400 nm, covering the operating wavelengths of III-V lasers, which could be monolithically or hybridly integrated on the same substrate. A high confinement factor of ~90% near the single-mode limit was obtained, and a low bending loss of ~0.01 dB was effectively achieved with the bending radius reaching 90 µm, 70 µm, and 40 µm for wavelengths of 2000 nm, 1550 nm, and 850 nm, respectively. Furthermore, the use of a pedestal structure or a SiO2 bottom cladding layer has shown potential to further reduce bending losses. The introduction of a SiO2 bottom cladding layer effectively eliminates the influence of the substrate's larger refractive index, resulting in further improvement in waveguide performance. The platform enables tightly built waveguides and small bending radii with high field confinement and low propagation losses, showcasing silicon nitride waveguides on sapphire as promising passive components for the development of high-performance and cost-effective PICs.
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Quantum photonic integrated circuits, composed of linear-optical elements, offer an efficient way for encoding and processing quantum information on-chip. At their core, these circuits rely on reconfigurable phase shifters, typically constructed from classical components such as thermo- or electro-optical materials, while quantum solid-state emitters such as quantum dots are limited to acting as single-photon sources. Here, we demonstrate the potential of quantum dots as reconfigurable phase shifters. We use numerical models based on established literature parameters to show that circuits utilizing these emitters enable high-fidelity operation and are scalable. Despite the inherent imperfections associated with quantum dots, such as imperfect coupling, dephasing, or spectral diffusion, we show that circuits based on these emitters may be optimized such that these do not significantly impact the unitary infidelity. Specifically, they do not increase the infidelity by more than 0.001 in circuits with up to 10 modes, compared to those affected only by standard nanophotonic losses and routing errors. For example, we achieve fidelities of 0.9998 in quantum-dot-based circuits enacting controlled-phase and - not gates without any redundancies. These findings demonstrate the feasibility of quantum emitter-driven quantum information processing and pave the way for cryogenically-compatible, fast, and low-loss reconfigurable quantum photonic circuits.
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In the dynamic landscape of Artificial Intelligence (AI), two notable phenomena are becoming predominant: the exponential growth of large AI model sizes and the explosion of massive amount of data. Meanwhile, scientific research such as quantum computing and protein synthesis increasingly demand higher computing capacities. As the Moore's Law approaches its terminus, there is an urgent need for alternative computing paradigms that satisfy this growing computing demand and break through the barrier of the von Neumann model. Neuromorphic computing, inspired by the mechanism and functionality of human brains, uses physical artificial neurons to do computations and is drawing widespread attention. This review studies the expansion of optoelectronic devices on photonic integration platforms that has led to significant growth in photonic computing, where photonic integrated circuits (PICs) have enabled ultrafast artificial neural networks (ANN) with sub-nanosecond latencies, low heat dissipation, and high parallelism. In particular, various technologies and devices employed in neuromorphic photonic AI accelerators, spanning from traditional optics to PCSEL lasers are examined. Lastly, it is recognized that existing neuromorphic technologies encounter obstacles in meeting the peta-level computing speed and energy efficiency threshold, and potential approaches in new devices, fabrication, materials, and integration to drive innovation are also explored. As the current challenges and barriers in cost, scalability, footprint, and computing capacity are resolved one-by-one, photonic neuromorphic systems are bound to co-exist with, if not replace, conventional electronic computers and transform the landscape of AI and scientific computing in the foreseeable future.
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Nanoscale mechanical resonators have attracted a great deal of attention for signal processing, sensors, and quantum applications. Recent progress in ultrahigh-Q acoustic cavities in nanostructures allows strong interactions with various physical systems and advanced functional devices. Those acoustic cavities are highly sensitive to external perturbations, and it is hard to control those resonance properties since those responses are determined by the geometry and material. In this paper, we demonstrate a novel acoustic resonance tuning method by mixing high-order Lorentzian responses in an optomechanical system. Using weakly coupled phononic-crystal acoustic cavities, we achieve coherent mixing of second- and third-order Lorentzian responses, which is capable of the fine-tunability of the bandwidth and peak frequency of the resonance with a tuning range comparable to the acoustic dissipation rate of the device. This novel resonance tuning method can be widely applied to Lorentzian-response systems and optomechanics, especially active compensation for environmental fluctuation and fabrication errors.
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Swine viral diseases have the capacity to cause significant losses and affect the sector's sustainability, a situation further exacerbated by the lack of antiviral drugs and the limited availability of effective vaccines. In this context, a novel point-of-care (POC) diagnostic device incorporating photonic integrated circuits (PICs), microfluidics and information, and communication technology into a single platform was developed for the field diagnosis of African swine fever (ASF) and classical swine fever (CSF). The device targets viral particles and has been validated using oral fluid and serum samples. Sensitivity, specificity, accuracy, precision, positive likelihood ratio (PLR), negative likelihood ratio (NLR), and diagnostic odds ratio (DOR) were calculated to assess the performance of the device, and PCR was the reference method employed. Its sensitivities were 80.97% and 79%, specificities were 88.46% and 79.07%, and DOR values were 32.25 and 14.21 for ASF and CSF, respectively. The proposed POC device and PIC sensors can be employed for the pen-side detection of ASF and CSF, thus introducing novel technological advancements in the field of animal diagnostics. The need for proper validation studies of POC devices is highlighted to optimize animal biosecurity.
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Programmable photonic integrated circuits (PICs) are an increasingly important platform in optical science and engineering. However, current programmable PICs are mostly formed through subtractive fabrication techniques, which limits the reconfigurability of the device and makes prototyping costly and time-consuming. A rewritable PIC architecture can circumvent these drawbacks, where PICs are repeatedly written and erased on a single PIC canvas. We demonstrate such a rewritable PIC platform by selective laser writing a layer of wide-band-gap phase change material (PCM) Sb2S3 with a low-cost benchtop setup. We show arbitrary patterning with resolution up to 300 nm and write dielectric assisted waveguides with a low optical loss of 0.0172 dB/µm. We envision that using this inexpensive benchtop platform thousands of PIC designs can be written, tested, and erased on the same chip without the need for lithography/etching tools or a nanofabrication facility, thus reducing manufacturing cost and increasing accessibility.
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The direct growth of III-V quantum dot (QD) lasers on silicon substrate has been rapidly developing over the past decade and has been recognized as a promising method for achieving on-chip light sources in photonic integrated circuits (PICs). Up to date, O- and C/L-bands InAs QD lasers on Si have been extensively investigated, but as an extended telecommunication wavelength, the E-band QD lasers directly grown on Si substrates are not available yet. Here, we demonstrate the first E-band (1365 nm) InAs QD micro-disk lasers epitaxially grown on Si (001) substrates by using a III-V/IV hybrid dual-chamber molecular beam epitaxy (MBE) system. The micro-disk laser device on Si was characterized with an optical threshold power of 0.424 mW and quality factor (Q) of 1727.2 at 200 K. The results presented here indicate a path to on-chip silicon photonic telecom-transmitters.
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Photonic diplexers are being widely investigated for high data transfer rates in on-chip communication. However, dividing the available spectrum into nonoverlapping multicarrier frequency sub-bands has remained a challenge in designing frequency-selective time-invariant channels. Here, an on-chip topological diplexer is reported exhibiting terahertz frequency band filtering through Klein tunneling of topological edge modes. The silicon topological diplexer chip facilitates two high-speed channels with quadrature amplitude modulation (QAM) over a broad bandwidth of 12.5 GHz each. These channels operate at carrier frequencies of 305 and 321.6 GHz, achieving a combined diplexer capacity of 150 Gbit s-1. To ensure minimal interference between adjacent channels, a guard band is implemented. Topologically protected edge modes suppress the frequency selective fading of the broadband signals and hold promise for diverse integrated photonic applications spanning terahertz and telecommunication realms, including the design of lossless topological multiplexers, interconnects, antennas, and modulators for the sixth to X generation (6G to XG) wireless.
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Photonic integrated circuits (PICs) are revolutionizing the realm of information technology, promising unprecedented speeds and efficiency in data processing and optical communication. However, the nanoscale precision required to fabricate these circuits at scale presents significant challenges, due to the need to maintain consistency across wavelength-selective components, which necessitates individualized adjustments after fabrication. Harnessing spectral alignment by automated silicon ion implantation, in this work scalable and non-volatile photonic computational memories are demonstrated in high-quality resonant devices. Precise spectral trimming of large-scale photonic ensembles from a few picometers to several nanometres is achieved with long-term stability and marginal loss penalty. Based on this approach, spectrally aligned photonic memory and computing systems for general matrix multiplication are demonstrated, enabling wavelength multiplexed integrated architectures at large scales.
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The programmable photonic integrated circuit (PIC) is an enabling technology behind optical interconnects and quantum information processing. Conventionally, the programmability of PICs is driven by the thermo-optic effect, free carrier dispersion, or mechanical tuning. These effects afford either high speed or a large extinction ratio, but all require constant power or bias to maintain the states, which is undesirable for programmability with infrequent switching. Recent progress in programmable PICs based on nonvolatile phase-change materials (PCMs) offers an attractive solution to a truly "set-and-forget" switch that requires zero static energy. Here, we report an essential building block of large-scale programmable PICsâa racetrack resonator with independent control of coupling and phase. We changed the resonance extinction ratio (ER) without perturbing the resonance wavelength, leveraging a programmable unit based on a directional coupler and a low-loss PCM Sb2Se3. The unit is only 33-µm-long and has an operating bandwidth over 50 nm, a low insertion loss (â¼0.36 dB), high ER (â¼15 dB), and excellent fabrication yield of over 1000 cycles endurance across nine switches. The work is a crucial step toward future large-scale energy-efficient programmable PICs.
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With the advance of on-chip nanophotonics, there is a high demand for high-refractive-index and low-loss materials. Currently, this technology is dominated by silicon, but van der Waals (vdW) materials with a high refractive index can offer a very advanced alternative. Still, up to now, it was not clear if the optical anisotropy perpendicular to the layers might be a hindering factor for the development of vdW nanophotonics. Here, we studied WS2-based waveguides in terms of their optical properties and, particularly, in terms of possible crosstalk distance. Surprisingly, we discovered that the low refractive index in the direction perpendicular to the atomic layers improves the characteristics of such devices, mainly due to expanding the range of parameters at which single-mode propagation can be achieved. Thus, using anisotropic materials offers new opportunities and novel control knobs when designing nanophotonic devices.
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The integration of low-dimensional materials with optical waveguides presents promising opportunities for enhancing light manipulation in passive photonic circuits. In this study, we investigate the potential of aerosol-synthesized single-walled carbon nanotube (SWCNT) films for silicon nitride photonic circuits as a basis for developing integrated optics devices. Specifically, by measuring the optical response of SWCNT-covered waveguides, we retrieve the main SWCNT film parameters, such as absorption, nonlinear refractive, and thermo-optic coefficients, and we demonstrate the enhancement of all-optical wavelength conversion and the photoresponse with a 1.2 GHz bandwidth.
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Van der Waals (vdWs) heterostructures, assembled by stacking of two-dimensional (2D) crystal layers, have emerged as a promising new material system for high-performance optoelectronic applications, such as thin film transistors, photodetectors, and light-emitters. In this study, we showcase an innovative device that leverages strain-tuning capabilities, utilizing a MoS2/Sb2Te3 vdWs p-n heterojunction architecture designed explicitly for photodetection across the visible to near-infrared spectrum. These heterojunction devices provide ultra-low dark currents as small as 4.3 pA, a robust photoresponsivity of 0.12 A W-1, and reasonable response times characterized by rising and falling durations of 0.197 s and 0.138 s, respectively. These novel devices exhibit remarkable tunability under the application of compressive strain up to 0.3%. The introduction of strain at the heterojunction interface influences the bandgap of the materials, resulting in a significant alteration of the heterojunction's band structure. This subsequently shifts the detector's optical absorption properties. The proposed strategy of strain-induced engineering of the stacked 2D crystal materials allows the tuning of the electronic and optical properties of the device. Such a technique enables fine-tuning of the optoelectronic performance of vdWs devices, paving the way for tunable high-performance, low-power consumption applications. This development also holds significant potential for applications in wearable sensor technology and flexible electro-optic circuits.
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Integrated photonic circuits (PICs) have seen an explosion in interest, through to commercialization in the past decade. Most PICs rely on sharp resonances to modulate, steer, and multiplex signals. However, the spectral characteristics of high-quality resonances are highly sensitive to small variations in fabrication and material constants, which limits their applicability. Active tuning mechanisms are commonly employed to account for such deviations, consuming energy and occupying valuable chip real estate. Readily employable, accurate, and highly scalable mechanisms to tailor the modal properties of photonic integrated circuits are urgently required. Here, we present an elegant and powerful solution to achieve this in a scalable manner during the semiconductor fabrication process using existing lithography tools: by exploiting the volume shrinkage exhibited by certain polymers to permanently modulate the waveguide's effective index. This technique enables broadband and lossless tuning with immediate applicability in wide-ranging applications in optical computing, telecommunications, and free-space optics.
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The conventional approach to optimising plasmonic sensors is typically based entirely on ensuring phase matching between the excitation wave and the surface plasmon supported by the metallic structure. However, this leads to suboptimal performance, even in the simplest sensor configuration based on the Otto geometry. We present a simplified coupled mode theory approach for evaluating and optimizing the sensing properties of plasmonic waveguide refractive index sensors. It only requires the calculation of propagation constants, without the need for calculating mode overlap integrals. We apply our method by evaluating the wavelength-, device length- and refractive index-dependent transmission spectra for an example silicon-on-insulator-based sensor of finite length. This reveals all salient spectral features which are consistent with full-field finite element calculations. This work provides a rapid and convenient framework for designing dielectric-plasmonic sensor prototypes-its applicability to the case of fibre plasmonic sensors is also discussed.
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We report a simple and facile integration strategy of a laser source in passive photonic integrated circuits (PICs) by deterministically embedding semiconductor nanowires (NWs) in waveguides. InP NWs laid on a SiN slab are buried by a polymer layer which also acts as an electron-beam resist. With electron-beam lithography, hybrid polymer-SiN waveguides are formed with precisely embedded NWs. The lasing behavior of the waveguide-embedded NWs is confirmed, and more importantly, the NW lasing mode couples into the hybrid waveguide and forms an in-plane guiding mode. Multiple waveguide-embedded NW lasers are further integrated in complex photonic structures to illustrate that the waveguiding mode supplied by the NW lasers could be manipulated for on-chip signal processing, including power splitting and wavelength-division multiplexing. This integration strategy of an on-chip laser is applicable to other PIC platforms, such as silicon and lithium niobate, and the top cladding layer could be changed by depositing SiN or SiO2, promising its CMOS compatibility.
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A light flow controller that can regulate the three-port optical power in both lossless and lossy modus is realized on a programmable multimode waveguide engine. The microheaters on the waveguide chip mimic the tunable "pixels" that can continuously adjust the local refractive index. Compared to the conventional method where the tuning takes place only on single-mode waveguides, the proposed structure is more compact and requires less electrodes. The local index changes in a multimode waveguide can alter the mode numbers, field distribution, and propagation constants of each individual mode, all of which can alter the multimode interference pattern significantly. However, these changes are mostly complex and not governed by analytical equations as in the single-mode case. Though numerical simulations can be performed to predict the device response, the thermal and electromagnetic computing involved is mostly time-consuming. Here, a multi-level search program is developed based on experiments only. It can reach a target output in real time by adjusting the microheaters collectively and iteratively. It can also jump over local optima and further improve the cost function on a global level. With only a simple waveguide structure and four microheaters, light can be routed freely into any of the three output ports with arbitrary power ratios, with and without extra attenuation. This work may trigger new ideas in developing compact and efficient photonic integrated devices for applications in optical communication and computing.
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Conventional thermo-optic devices-which can be broadly categorized to that with and without a thermal isolation trench-typically come with a tradeoff between thermal tuning efficiency and tuning speed. Here, we propose a method that allows us to directly define the tradeoff using a specially designed thermo-optic phase shifter with an interleaved isolation trench. With the design, the tuning efficiency and speed can be precisely tailored simply by controlling the duty ratio (suspended length over total heater length) of the suspended design. Phase shifters are one of the main components in photonic-integrated circuits, and having phase shifters with a flexible design approach may enable the wide adoption of photonic applications such as an optical neural network and LiDAR.