Effect of Noncircular Channel on Distribution of Threshold Voltage in 3D NAND Flash Memory.

The instability in threshold voltage (VTH) and charge distributions in noncircular cells of three-dimensional (3D) NAND flash memory are investigated. Using TCAD simulation, we aim to identify the main factors influencing the VTH of noncircular cells. The key focus is on the nonuniform trapped electron density in the charge trapping layer (CTL) caused by the change in electric field between the circular region and the spike region. There are less-trapped electron (LT) regions within the CTL of programmed noncircular cells, which significantly enhances current flow. Remarkably, more than 50% of the total current flows through these LT regions when the spike size reaches 15 nm. We also performed a comprehensive analysis of the relationship between charge distribution and VTH in two-spike cells with different heights (HSpike) and angles between spikes (θ). The results of this study demonstrate the potential to improve the reliability of next-generation 3D NAND flash memory.

Noninvasive and Contactless Characterization of Electronic Properties at the Semiconductor/Dielectric Interface Using Optical Second-Harmonic Generation.

Optical second-harmonic generation (SHG) is a reliable technique for probing material surface and interface characteristics. Here, we have demonstrated a non-destructive, contactless SHG-based semiconductor/dielectric interface characterization method to measure the conduction band offset and quantitatively evaluate charge densities at the interface in oxide and at the oxide surface. This technique extracts the interface-trapped charge type (donor/acceptor) and qualitatively analyzes the process-induced variation in interface states (Dit), oxide, and oxide surface state density. These qualitative and quantitative analyses provide us with a glimpse into the band bending. The metrology method is validated through a detailed characterization of the Si/HfO2 interface. An optical setup has been developed to monitor the time-dependent second-harmonic generation (TDSHG) from the semiconductor/oxide interface. The temporal characteristics of TDSHG are explained with its relationship to the filling of Dit and spatio-temporal trapping of photoexcited charge in oxide and at the oxide surface. A numerical solver, based on plausible carrier dynamics, is used to model the experimental data and to extract the electronic properties at the Si/HfO2 interface.

Preparation of Remote Plasma Atomic Layer-Deposited HfO2 Thin Films with High Charge Trapping Densities and Their Application in Nonvolatile Memory Devices.

Optimization of equipment structure and process conditions is essential to obtain thin films with the required properties, such as film thickness, trapped charge density, leakage current, and memory characteristics, that ensure reliability of the corresponding device. In this study, we fabricated metal-insulator-semiconductor (MIS) structure capacitors using HfO2 thin films separately deposited by remote plasma (RP) atomic layer deposition (ALD) and direct-plasma (DP) ALD and determined the optimal process temperature by measuring the leakage current and breakdown strength as functions of process temperature. Additionally, we analyzed the effects of the plasma application method on the charge trapping properties of HfO2 thin films and properties of the interface between Si and HfO2. Subsequently, we synthesized charge-trapping memory (CTM) devices utilizing the deposited thin films as charge-trapping layers (CTLs) and evaluated their memory properties. The results indicated excellent memory window characteristics of the RP-HfO2 MIS capacitors compared to those of the DP-HfO2 MIS capacitors. Moreover, the memory characteristics of the RP-HfO2 CTM devices were outstanding as compared to those of the DP-HfO2 CTM devices. In conclusion, the methodology proposed herein can be useful for future implementations of multiple levels of charge-storage nonvolatile memories or synaptic devices that require many states.

Effect of Isothermal Conditions on the Charge Trapping/Detrapping Parameters in e-Beam Irradiated Thermally Aged XLPE Insulation in SEM.

The effect of isothermal conditions on the trapping/detrapping process of charges in e-beam irradiated thermally aged XLPE insulation in scanning electron microscopy (SEM) has been investigated. Different isothermal conditions ranging from room temperature to 120 °C are applied on both unaged and aged XLPE samples (2 mm thick) by a suitable arrangement associated with SEM. For each applied test temperature, leakage, and influence currents have been measured simultaneously during and after e-beam irradiation. Experimental results show a big difference between the fresh and aged material regarding trapping and detrapping behavior. It has been pointed out that in the unaged material deep traps govern the process, whereas the shallow traps take part in the aged one. Almost all obtained results reveal that the trapped charge decreases and then increases as the temperature increases for the unaged sample. A deflection temperature corresponding to a minimum is observed at 50 °C. However, for the aged material, the maximum trapped charge decreases continuously with increasing temperature, and the material seems to trap fewer charges under e-beam irradiation at high temperature. Furthermore, thermal aging leads to the occurrence of detrapping process at high temperatures even under e-beam irradiation, which explains the decrease with time evolution of trapped charge during this period. The recorded leakage current increases with increasing temperature for both cases with pronounced values for aged material. The effect of temperature and thermal aging on electrostatic influence factor (K) and total secondary electron emission yield (σ) were also studied.

Analytical model of secondary electron emission yield in electron beam irradiated insulators.

The study of secondary electron emission (SEE) yield as a function of the kinetic energy of the incident primary electron beam and its evolution with charge accumulation inside insulators is a source of valuable information (even though an indirect one) on charge transport and trapping phenomena. We will show that this evolution is essentially due, in plane geometry conditions (achieved using a defocused electron beam), to the electric field effect (due to the accumulation of trapped charges in the bulk) in the escape zone of secondary electrons and not to modifications of trapping cross sections, which only have side effects. We propose an analytical model including the main basic phenomena underlying the space charge dynamics. It will be observed that such a model makes it possible to reproduce both qualitatively and quantitatively the measurement of SEE evolution as well as to provide helpful indications concerning charge transport (more precisely, the ratios between the mobility and diffusion coefficient with the thermal velocity of the charge carrier).

Performance and Reliability of Electrowetting-on-Dielectric (EWOD) Systems Based on Tantalum Oxide.

The electrowetting-on-dielectric behavior of Cytop/Tantalum oxide (TaOx) bilayers is studied by measuring their response vs applied voltage and under prolonged periodic cycling, below and above the threshold voltage VT corresponding to the breakdown field for the oxide. TaOx exhibits symmetric solid state I-V characteristics, with electronic conduction dominated by Schottky, Poole-Frenkel emission; conduction is attributed to oxygen vacancies (6 × 1016 cm-3), resulting in large currents at low bias. Electrolyte/Metal Oxide/Metal I-V characteristics show oxide degradation at (<5 V) cathodic bias; anodic bias in contrast results in stable characteristics until reaching the anodization voltage, where the oxide thickens, leading eventually to breakdown and oxygen production at the electrode. Electrowetting angle vs applied voltage undergoes three different stages: a parabolic variation of contact angle (CA) with applied voltage, CA saturation, and rebound of the CA to higher values due to degradation of the polymer layer. The contact angle remained stable for several hundred cycles if the applied voltage was less than VT; degradation in contrast is fast when the voltage is above VT. Degradation of the electrowetting response with time is linked to charge accumulation in the polymer, which inhibits the rebound of the CA when voltage is being applied.

Band-Bending of Ga-Polar GaN Interfaced with Al2O3 through Ultraviolet/Ozone Treatment.

Understanding the band bending at the interface of GaN/dielectric under different surface treatment conditions is critically important for device design, device performance, and device reliability. The effects of ultraviolet/ozone (UV/O3) treatment of the GaN surface on the energy band bending of atomic-layer-deposition (ALD) Al2O3 coated Ga-polar GaN were studied. The UV/O3 treatment and post-ALD anneal can be used to effectively vary the band bending, the valence band offset, conduction band offset, and the interface dipole at the Al2O3/GaN interfaces. The UV/O3 treatment increases the surface energy of the Ga-polar GaN, improves the uniformity of Al2O3 deposition, and changes the amount of trapped charges in the ALD layer. The positively charged surface states formed by the UV/O3 treatment-induced surface factors externally screen the effect of polarization charges in the GaN, in effect, determining the eventual energy band bending at the Al2O3/GaN interfaces. An optimal UV/O3 treatment condition also exists for realizing the "best" interface conditions. The study of UV/O3 treatment effect on the band alignments at the dielectric/III-nitride interfaces will be valuable for applications of transistors, light-emitting diodes, and photovoltaics.

Local field effect on charge-capture/emission dynamics.

Charge-capture/emission is ubiquitous in electron devices. Its dynamics often play critical roles in device operation and reliability. Treatment of this basic process is found in many text books and is considered well understood. As in many electron device models, the individuality of immobile charge is commonly replaced with the average quantity of charge density. This has worked remarkably well when large numbers of individual charges (ensemble) are involved. As device geometries become very small, the ensemble "averaging" becomes far less accurate. In this work, the charge-capture/emission dynamic of Metal-Oxide-Semiconductor-Field-Effect-Transistor (MOSFET) is re-examined with full consideration of individual charges and the local field in their immediate vicinity. A dramatic modification of the local band diagram resulted, forcing a drastic change in emission mechanism. The implication is that many well-understood phenomena involving charge capture/emission will need to be reconsidered. As an example, this new picture is applied to the random telegraph noise (RTN) phenomenon. When the screening of a trapped charge by a polar medium such as SiO2 is quantitatively accounted for in this local field picture, a new physically sound RTN emission mechanism emerges. Similarly, the dynamics of post-stress recovery of Negative-Bias-Instability of p-channel MOSFET can be more rationally explained.

Failure Modes during Low-Voltage Electrowetting.

Low-voltage electrowetting devices allow significant contact angle changes below a 50 V bias; however, operation under prolonged cycling and failure modes have not yet been sufficiently elucidated. In this work, the failure modes and performance degradation of Cytop (23-210 nm)/aluminum oxide (15-44 nm) bilayers have been investigated. Contact angle and leakage current were measured during stepped voltage measurements up to failure, showing three electrowetting response regimes: ideal Young-Lippmann behavior, contact angle saturation, and dielectric breakdown. The onset of ionic conduction in aluminum oxide and the resulting breakdown control when the layer would ultimately fail, but the thickness of the Cytop layer determined the achievable contact angle versus voltage characteristics. Cyclic electrowetting measurements studied the repeatability of contact angle change using an applied voltage above or below the voltage drop needed for polymer breakdown (VT). Results show repeatable electrowetting below VT and a rapidly diminishing contact angle response above VT. The leakage current and injected charge cannot be used to comprehensively assess the stability of the system during operation. The contact potential difference measured with a Kelvin probe provides an alternative means of assessing the extent of the damage.