Electro-optically induced absorption in alpha-Si:H/alpha-SiCN waveguiding multistacks.
Opt Express
; 16(10): 7540-50, 2008 May 12.
Article
en En
| MEDLINE
| ID: mdl-18545459
ABSTRACT
Electro optical absorption in hydrogenated amorphous silicon (proportional-SiH)--morphous silicon carbonitride (proportional-SiCxNy) multilayers have been studied in two different planar multistacks waveguides. The waveguides were realized by plasma enhanced chemical vapour deposition (PECVD), a technology compatible with the standard microelectronic processes. Light absorption is induced at lambda = 1.55 microm through the application of an electric field which induces free carrier accumulation across the multiple insulator/semiconductor device structure. The experimental performances have been compared to those obtained through calculations using combined two-dimensional (2-D) optical and electrical simulations.
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Base de datos:
MEDLINE
Idioma:
En
Revista:
Opt Express
Asunto de la revista:
OFTALMOLOGIA
Año:
2008
Tipo del documento:
Article