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Electrical characterization of ZnO single nanowire device for chemical sensor application.
Kim, E K; Lee, H Y; Moon, S E; Park, J; Park, S J; Kwak, J H; Maeng, S; Park, K H; Kim, J; Kim, S W; Ji, H J; Kim, G T.
Afiliación
  • Kim EK; Electronics and Telecommunications Research Institute, Daejeon, 305-700, Korea.
J Nanosci Nanotechnol ; 8(9): 4698-701, 2008 Sep.
Article en En | MEDLINE | ID: mdl-19049088
ABSTRACT
Vertically well-aligned high quality ZnO nanowires were grown on GaN epilayer on c-plane sapphire via a vapor-liquid-solid (VLS) process by introducing an Au thin film (3 nm) as a catalyst. ZnO single nanowire device was ingenuously fabricated by combining conventional optical lithography and high resolution electron beam lithography and its current-voltage characteristics were measured with doing the post process to acquire reproducible performance as a chemical gas sensor. And its temperature dependent current-voltage characteristics were measured to investigate temperature dependant electrical transport. The ZnO nanowire device showed slightly non-ohmic current-voltage characteristics which may be due to back-to-back configuration of the diodes with the insulating contact barriers and showed an relatively small activation energy of 0.2 eV. To test our device as a chemical sensor, the NO2 gas response was reported at the elevated temperature.
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Base de datos: MEDLINE Asunto principal: Óxido de Zinc / Técnicas Biosensibles / Nanotecnología / Nanocables Tipo de estudio: Prognostic_studies Idioma: En Revista: J Nanosci Nanotechnol Año: 2008 Tipo del documento: Article
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Base de datos: MEDLINE Asunto principal: Óxido de Zinc / Técnicas Biosensibles / Nanotecnología / Nanocables Tipo de estudio: Prognostic_studies Idioma: En Revista: J Nanosci Nanotechnol Año: 2008 Tipo del documento: Article