Hexagonal MoTe<sub>2</sub> with Amorphous BN Passivation Layer for Improved Oxidation Resistance and Endurance of 2D Field Effect Transistors.

Hexagonal MoTe₂ with Amorphous BN Passivation Layer for Improved Oxidation Resistance and Endurance of 2D Field Effect Transistors.

Sirota, Benjamin; Glavin, Nicholas; Krylyuk, Sergiy; Davydov, Albert V; Voevodin, Andrey A.

Afiliación

Sirota B; Department of Materials Science and Engineering, Advanced Materials and Manufacturing Processing Institute, University of North Texas, Denton, TX, 76203, USA.
Glavin N; Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, OH, 45433, USA.
Krylyuk S; Theiss Research, Inc, La Jolla, CA, 92037, USA.
Davydov AV; Materials Science and Engineering Division, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA.
Voevodin AA; Materials Science and Engineering Division, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA.

Sci Rep ; 8(1): 8668, 2018 Jun 06.

Article en En | MEDLINE | ID: mdl-29875367

Texto completo: 1 Base de datos: MEDLINE Idioma: En Revista: Sci Rep Año: 2018 Tipo del documento: Article

Texto completo: 1 Base de datos: MEDLINE Idioma: En Revista: Sci Rep Año: 2018 Tipo del documento: Article