Influence of Self-Heating Effect on Interface Trap Generation in Highly Flexible Single-Crystalline Si Nanomembrane Transistors.

Bong, Jae Hoon; Kim, Seung-Yoon; Jeong, Chan Bae; Chang, Ki Soo; Hwang, Wan Sik; Cho, Byung Jin.

Afiliación

Bong JH; School of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, 34141, Korea.
Kim SY; School of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, 34141, Korea.
Jeong CB; Division of Scientific Instrumentation, Korea Basic Science Institute, Daejeon, 34133, Korea 3.
Chang KS; Division of Scientific Instrumentation, Korea Basic Science Institute, Daejeon, 34133, Korea 3.
Hwang WS; Department of Materials Engineering, Korea Aerospace University, Goyang, 10540, Korea.
Cho BJ; School of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, 34141, Korea.

J Nanosci Nanotechnol ; 19(10): 6481-6486, 2019 Oct 01.

Article en En | MEDLINE | ID: mdl-31026981

Texto completo: 1 Base de datos: MEDLINE Idioma: En Revista: J Nanosci Nanotechnol Año: 2019 Tipo del documento: Article

Texto completo: 1 Base de datos: MEDLINE Idioma: En Revista: J Nanosci Nanotechnol Año: 2019 Tipo del documento: Article