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Phase Transition across Anisotropic NbS3 and Direct Gap Semiconductor TiS3 at Nominal Titanium Alloying Limit.
Wu, Kedi; Blei, Mark; Chen, Bin; Liu, Lei; Cai, Hui; Brayfield, Cassondra; Wright, David; Zhuang, Houlong; Tongay, Sefaattin.
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  • Wu K; School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, 85287, USA.
  • Blei M; School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, 85287, USA.
  • Chen B; School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, 85287, USA.
  • Liu L; School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, 85287, USA.
  • Cai H; School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, 85287, USA.
  • Brayfield C; School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, 85287, USA.
  • Wright D; LeRoy Eyring Center for Solid State Science, Arizona State University, Tempe, AZ, 85287, USA.
  • Zhuang H; School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, 85287, USA.
  • Tongay S; School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, 85287, USA.
Adv Mater ; 32(17): e2000018, 2020 Apr.
Article en En | MEDLINE | ID: mdl-32167204
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Texto completo: 1 Base de datos: MEDLINE Idioma: En Revista: Adv Mater Asunto de la revista: BIOFISICA / QUIMICA Año: 2020 Tipo del documento: Article
Texto completo
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Base de datos: MEDLINE Idioma: En Revista: Adv Mater Asunto de la revista: BIOFISICA / QUIMICA Año: 2020 Tipo del documento: Article