Evolution of lattice distortions in 4H-SiC wafers with varying doping.

Mahadik, Nadeemullah A; Das, Hrishikesh; Stoupin, Stanislav; Stahlbush, Robert E; Bonanno, Peter L; Xu, Xueping; Rengarajan, Varatharajan; Ruland, Gary E.

Afiliación

Mahadik NA; US Naval Research Laboratory, Washington, DC, USA. nadeem.mahadik@nrl.navy.mil.
Das H; On Semiconductor, South Portland, ME, USA.
Stoupin S; Cornell High Energy Synchrotron Source, Ithaca, NY, USA.
Stahlbush RE; US Naval Research Laboratory, Washington, DC, USA.
Bonanno PL; US Naval Research Laboratory, Washington, DC, USA.
Xu X; II-VI Advanced Materials, Pine Brook, NJ, 07058, USA.
Rengarajan V; II-VI Advanced Materials, Pine Brook, NJ, 07058, USA.
Ruland GE; II-VI Advanced Materials, Pine Brook, NJ, 07058, USA.

Sci Rep ; 10(1): 10845, 2020 Jul 02.

Article en En | MEDLINE | ID: mdl-32616856

Texto completo: 1 Base de datos: MEDLINE Idioma: En Revista: Sci Rep Año: 2020 Tipo del documento: Article

Texto completo: 1 Base de datos: MEDLINE Idioma: En Revista: Sci Rep Año: 2020 Tipo del documento: Article