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A Gd@C82 single-molecule electret.
Zhang, Kangkang; Wang, Cong; Zhang, Minhao; Bai, Zhanbin; Xie, Fang-Fang; Tan, Yuan-Zhi; Guo, Yilv; Hu, Kuo-Juei; Cao, Lu; Zhang, Shuai; Tu, Xuecou; Pan, Danfeng; Kang, Lin; Chen, Jian; Wu, Peiheng; Wang, Xuefeng; Wang, Jinlan; Liu, Junming; Song, You; Wang, Guanghou; Song, Fengqi; Ji, Wei; Xie, Su-Yuan; Shi, Su-Fei; Reed, Mark A; Wang, Baigeng.
Afiliación
  • Zhang K; National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing, China.
  • Wang C; Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-Nano Devices, and Department of Physics, Renmin University of China, Beijing, China.
  • Zhang M; National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing, China.
  • Bai Z; National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing, China.
  • Xie FF; State Key Laboratory of Physical Chemistry of Solid Surfaces and Department of Chemistry, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, China.
  • Tan YZ; State Key Laboratory of Physical Chemistry of Solid Surfaces and Department of Chemistry, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, China.
  • Guo Y; School of Physics, Southeast University, Nanjing, China.
  • Hu KJ; National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing, China.
  • Cao L; National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing, China.
  • Zhang S; National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing, China.
  • Tu X; School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
  • Pan D; School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
  • Kang L; School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
  • Chen J; School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
  • Wu P; School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
  • Wang X; School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
  • Wang J; School of Physics, Southeast University, Nanjing, China.
  • Liu J; National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing, China.
  • Song Y; State Key Laboratory of Coordination Chemistry, Collaborative Innovation Center of Advanced Microstructures, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing, China.
  • Wang G; National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing, China.
  • Song F; National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing, China. songfengqi@nju.edu.cn.
  • Ji W; Atomic Manufacture Institute, Nanjing, China. songfengqi@nju.edu.cn.
  • Xie SY; Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-Nano Devices, and Department of Physics, Renmin University of China, Beijing, China. wji@ruc.edu.cn.
  • Shi SF; State Key Laboratory of Physical Chemistry of Solid Surfaces and Department of Chemistry, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, China. syxie@xmu.edu.cn.
  • Reed MA; Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, NY, USA. shis2@rpi.edu.
  • Wang B; Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY, USA. shis2@rpi.edu.
Nat Nanotechnol ; 15(12): 1019-1024, 2020 Dec.
Article en En | MEDLINE | ID: mdl-33046843
ABSTRACT
Electrets are dielectric materials that have a quasi-permanent dipole polarization. A single-molecule electret is a long-sought-after nanoscale component because it can lead to miniaturized non-volatile memory storage devices. The signature of a single-molecule electret is the switching between two electric dipole states by an external electric field. The existence of these electrets has remained controversial because of the poor electric dipole stability in single molecules. Here we report the observation of a gate-controlled switching between two electronic states in Gd@C82. The encapsulated Gd atom forms a charged centre that sets up two single-electron transport channels. A gate voltage of ±11 V (corresponding to a coercive field of ~50 mV Å-1) switches the system between the two transport channels with a ferroelectricity-like hysteresis loop. Using density functional theory, we assign the two states to two different permanent electrical dipole orientations generated from the Gd atom being trapped at two different sites inside the C82 cage. The two dipole states are separated by a transition energy barrier of 11 meV. The conductance switching is then attributed to the electric-field-driven reorientation of the individual dipole, as the coercive field provides the necessary energy to overcome the transition barrier.

Texto completo: 1 Base de datos: MEDLINE Idioma: En Revista: Nat Nanotechnol Año: 2020 Tipo del documento: Article

Texto completo: 1 Base de datos: MEDLINE Idioma: En Revista: Nat Nanotechnol Año: 2020 Tipo del documento: Article