Observation of Flat Bands in Gated Semiconductor Artificial Graphene.

Du, Lingjie; Liu, Ziyu; Wind, Shalom J; Pellegrini, Vittorio; West, Ken W; Fallahi, Saeed; Pfeiffer, Loren N; Manfra, Michael J; Pinczuk, Aron.

Afiliación

Du L; School of Physics, and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China.
Liu Z; Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, USA.
Wind SJ; Department of Physics, Columbia University, New York, New York 10027, USA.
Pellegrini V; Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, USA.
West KW; Istituto Italiano di Tecnologia, Graphene Labs, Via Morego 30, I-16163 Genova, Italy.
Fallahi S; Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA.
Pfeiffer LN; Department of Physics and Astronomy, and School of Materials Engineering, and School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA.
Manfra MJ; Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA.
Pinczuk A; Department of Physics and Astronomy, and School of Materials Engineering, and School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA.

Phys Rev Lett ; 126(10): 106402, 2021 Mar 12.

Article en En | MEDLINE | ID: mdl-33784167

Texto completo: 1 Base de datos: MEDLINE Idioma: En Revista: Phys Rev Lett Año: 2021 Tipo del documento: Article

Texto completo: 1 Base de datos: MEDLINE Idioma: En Revista: Phys Rev Lett Año: 2021 Tipo del documento: Article