Effect of Point Defects on Electronic Structure of Monolayer GeS.

Choi, Hyeong-Kyu; Cha, Janghwan; Choi, Chang-Gyu; Kim, Junghwan; Hong, Suklyun

Choi, Hyeong-Kyu; Cha, Janghwan; Choi, Chang-Gyu; Kim, Junghwan; Hong, Suklyun.

Afiliación

Choi HK; Department of Physics, Graphene Research Institute, and GRI-TPC International Research Center, Sejong University, Seoul 05006, Korea.
Cha J; Department of Physics, Graphene Research Institute, and GRI-TPC International Research Center, Sejong University, Seoul 05006, Korea.
Choi CG; Department of Physics, Graphene Research Institute, and GRI-TPC International Research Center, Sejong University, Seoul 05006, Korea.
Kim J; Department of Physics, Graphene Research Institute, and GRI-TPC International Research Center, Sejong University, Seoul 05006, Korea.
Hong S; Department of Physics, Graphene Research Institute, and GRI-TPC International Research Center, Sejong University, Seoul 05006, Korea.

Nanomaterials (Basel) ; 11(11)2021 Nov 04.

Article en En | MEDLINE | ID: mdl-34835724

Palabras clave

DFT calculations; defect; electronic structure; formation energy; germanium monosulfide (GeS); piezoelectric coefficients; two-dimensional materials; vacancy healing

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