Controlled Hysteresis of Conductance in Molecular Tunneling Junctions.

Park, Junwoo; Kodaimati, Mohamad S; Belding, Lee; Root, Samuel E; Schatz, George C; Whitesides, George M

Park, Junwoo; Kodaimati, Mohamad S; Belding, Lee; Root, Samuel E; Schatz, George C; Whitesides, George M.

Afiliación

Park J; Department of Chemistry and Chemical Biology, Harvard University, 12 Oxford Street, Cambridge, Massachusetts 02138, United States.
Kodaimati MS; Department of Chemistry, Sogang University, Mapo-gu, Seoul 04107, Republic of Korea.
Belding L; Department of Chemistry and Chemical Biology, Harvard University, 12 Oxford Street, Cambridge, Massachusetts 02138, United States.
Root SE; Department of Chemistry and Chemical Biology, Harvard University, 12 Oxford Street, Cambridge, Massachusetts 02138, United States.
Schatz GC; Department of Chemistry and Chemical Biology, Harvard University, 12 Oxford Street, Cambridge, Massachusetts 02138, United States.
Whitesides GM; Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208-3113, United States.

ACS Nano ; 16(3): 4206-4216, 2022 Mar 22.

Article en En | MEDLINE | ID: mdl-35230085

Palabras clave

EGaIn junction; charge transport; hysteresis in conductance; molecular electronics; molecular tunneling junctions; quantum tunneling; self-assembled monolayers (SAMs)

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